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MoS2 are two-dimensional (2D) materials that exhibit emerging photoluminescence (PL) at the monolayer level and have potential optoelectronic applications. Monolayers of MoS2 typically achieved by ...

Strong electron-electron interactions experienced by electrons as they delocalize are widely believed to play a key role in a range of remarkable phenomena such as high Tc superconductivity, colossal magnetoresistance, and others. Strongly correlated electrons are often described by the Hubbard model, which is the simplest description of a correlated system and captures important gross features of phase diagrams of strongly correlated materials. However, open challenges in this field include experimentally mapping correlated electron phenomena beyond those captured by the Hubbard model, and extending the model accordingly. Here we use electrolyte gating to study a metal-insulator transition (MIT) in a new class of strongly correlated material, namely, nanostructured materials, using 1,4-butanedithiol-linked Au nanoparticle films (NPFs) as an example. Electrolyte gating provides a means for tuning the chemical potential of the materials over a wide range, without significantly modifying film morphology. On the insulating side of the transition, we observe Efros-Shklovskii variable range hopping and a soft Coulomb gap, evidencing the importance of Coulomb barriers. On the metallic side of the transition, we observe signatures of strong disorder mediated electron-electron correlations. Gating films near MIT also reveal a zero-bias conductance peak, which we attribute to a resonance at the Fermi level predicted by the Hubbard and Anderson impurity models when electrons delocalize and experience strong Coulomb electron-electron interactions. This study shows that by enabling large changes in carrier density, electrolyte gating of Au NPFs is a powerful means for tuning through the Hubbard MIT in NPFs. By revealing the range of behaviours that strongly correlated electrons can exhibit, this platform can guide the development of an improved understanding of correlated materials.

We have investigated electrical properties of planar aluminum/aluminum oxide/silver tunnel junctions modified with phenyl-based azomethine oligomers. Normalized differential conductance, NDC (NDC=σV/σV=0, where σ=dI/dV), of the junctions increases with oligomer length. At a bias of 2 V, azomethines with three phenyl rings exhibit NDCs that are on average more than an order of magnitude greater than those of unmodified oxide junctions. Differential conductances of junctions modified with azomethines increase more rapidly with temperature than those of plain oxide junctions. Our results are consistent with a model in which both increased conjugated length of the sandwiched organic layer and a molecule/metal interface lead to a lowering of the barrier profile outside the aluminum oxide tunnel region.

We study electrical transport in strongly coupled, molecularly linked, gold nanoparticle (NP) films whose bulk dc conductances are governed by percolation phenomena. Films with fewer NPs exhibit current suppression below a threshold voltage, likely due to single-electron charging of NP clusters. In some cases, the thresholds are very large (∼1 V) and suppression persists to room temperature. The thresholds tend to decrease with increasing amounts of NPs in the film, and eventually, metal-like conductance is observed down to at least 10 K. The observed trend toward metal-like conductance, despite the presence of film disorder, is enabled by strong inter-NP coupling and increasing film connectivity. The latter is an inherent property of molecularly linked NP films due to both robust chemical inter-NP linkages provided by alkane dithiol linker molecules, coupled with the ability to grow chains of connected NPs to arbitrary lengths through cyclical Au/dithol treatments. In the case of small thresholds, our da...

According to the “orthodox” model for single electron tunneling, sudden changes in current–voltage characteristics of nanoparticle (NP)-tunnel junction (TJ) systems [“Coulomb blockade” (CB) and “Coulomb staircase” (CS) phenomena] arise fundamentally due to charge quantization. We have embedded NPs (∼2.5 nm in diameter) in the TJ of a hybrid scanning tunneling-atomic force microscope and have simultaneously measured current and forces generated in the system. We discuss an application to micromechanical switching actuated by single electrons. We also show that CB and CS phenomena are in fact associated with steplike changes in force, directly confirming the discrete charge nature of the phenomena.

We present the first measurement of the longitudinal density matrix of a matter-wave beam. Usinga unique interferometric scheme, both the amplitude and phase of off-diagonal density matrix elementswere determined directly, without the use of traditional tomographic techniques. The measureddensity matrix of a doubly amplitude modulated atomic sodium beam compares well with theoreticalpredictions.

We demonstrate the absence of off-diagonal elements for the density matrix of a supersonic Na atomic beam, thus showing that there are no coherent wave packets emerging from this source. We used a differentially detuned separated oscillatory field longitudinal interferometer to search for off-diagonal density matrix elements in the longitudinal energy/momentum basis. Our study places a stringent lower bound on their possible size over an off-diagonal energy range from 0 to 100 kHz.

Localized oscillating fields are beam splitters that can entangle internal and longitudinal momentum states in an atomic beam. Differentially detuned separated oscillatory fields and an am modulator constitute a {open_quotes}white fringe{close_quotes} longitudinal interferometer which rephases velocity averaging by a process analogous to half a spin echo. Differentially detuned separated oscillatory fields are used to produce a downstream coherence or rephase an upstream coherence in an atomic beam. {copyright} {ital 1998} {ital The American Physical Society}

Interfaces between disordered normal (DN) materials and superconductors (S) are known to generate conductance peaks at zero-bias voltage (V) and magnetic field (B). Using molecularly linked Au nanoparticle films as the DN component, we find that superimposed on conductance peaks are oscillations that depend simultaneously on both V and B. Such correlated conductance oscillations are predicted by a "reflectionless tunneling" phenomenon but have not been observed in other DN-S systems. Length scales extracted from periods of conductance oscillation correlate well with film nanostructure.

We report a metal to insulator transition (MIT) in disordered films of molecularly linked gold nanoparticles (NPs). As the number of carbons ($n$) of alkanedithiol linker molecules (${\mathrm{C}}_{n}{\mathrm{S}}_{2}$) is varied, resistance ($R$) at low temperature ($T=2\text{ }\text{ }\mathrm{K}$) and at 200 K, as well as trends in $R$ vs $T$ data at intermediate temperatures, all point to an MIT occurring at $n=5$. We describe these results in a context of a Mott-Hubbard MIT. We find that all insulating samples ($n\ensuremath{\ge}5$) exhibit a universal scaling behavior $R\ensuremath{\sim}\mathrm{exp} [({T}_{0}/T{)}^{\ensuremath{\nu}}]$ with $\ensuremath{\nu}=0.65$, and all metallic samples ($n\ensuremath{\le}5$) exhibit weaker $R\mathrm{\text{\ensuremath{-}}}T$ dependencies than bulk gold. We discuss these observations in terms of competitive thermally activated processes and strong, $T$-independent elastic scattering, respectively.

We investigate electrical characteristics of single-electron electrode/nanoisland/electrode devices formed by alkanedithiol assisted self-assembly. Contrary to predictions of the orthodox model for double tunnel junction devices, we find a significant ( approximately fivefold) discrepancy in single-electron charging energies determined by Coulomb blockade (CB) voltage thresholds in current-voltage measurements versus those determined by an Arrhenius analysis of conductance in the CB region. The energies do, however, scale with particle sizes, consistent with single-electron charging phenomena. We propose that the discrepancy is caused by a multibarrier junction potential that leads to a voltage divider effect. Temperature and voltage dependent conductance measurements performed outside the blockade region are consistent with this picture. We simulated our data using a suitably modified orthodox model.