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Recent experimental work has realized a new insulating state of samarium nickelate $({\mathrm{SmNiO}}_{3})$, accessible in a reversible manner via high-density electron doping. To elucidate this behavior, we use the first-principles density functional theory $(\mathrm{DFT})+U$ method to study the effect of added electrons on the crystal and electronic structure of ${\mathrm{SmNiO}}_{3}$. First, we track the changes in the crystal and electronic structure with added electrons compensated by a uniform positive background charge at concentrations of $\frac{1}{4}$, $\frac{1}{2}$, $\frac{3}{4}$, and 1 electrons per Ni. The change in electron concentration does not rigidly shift the Fermi energy; rather, the added electrons localize on ${\mathrm{NiO}}_{6}$ octahedra causing an on-site Mott transition and a change in the density of states resulting in a large gap between the occupied and unoccupied Ni ${e}_{g}$ orbitals at full doping. This evolution of the density of states is essentially unchanged when the added electrons are introduced by doping with interstitial H or Li ions.

We investigate the impact of the coupling symmetry and chemical nature of organic-inorganic interfaces on thermoelectric transport in Cu2-xSe nanocrystal thin films. By coupling ligand-exchange techniques with layer-by-layer assembly methods, we are able to systematically vary nanocrystal-organic linker interfaces, demonstrating how the functionality of the polar headgroup and the coupling symmetry of the organic linkers can change the power factor (S(2)σ) by nearly 2 orders of magnitude. Remarkably, we observe that ligand-coupling symmetry has a profound effect on thermoelectric transport in these hybrid materials. We shed light on these results using intuition from a simplified model for interparticle charge transport via tunneling through the frontier orbital of a bound ligand. Our analysis indicates that ligand-coupling symmetry and binding mechanisms correlate with enhanced conductivity approaching 2000 S/cm, and we employ this concept to demonstrate among the highest power factors measured for quantum-dot based thermoelectric inorganic-organic composite materials of ∼ 30 μW/m · K(2).

We modulate the conductance of electrochemically inactive molecules in single-molecule junctions using an electrolytic gate to controllably tune the energy level alignment of the system. Molecular junctions that conduct through their highest occupied molecular orbital show a decrease in conductance when applying a positive electrochemical potential, and those that conduct though their lowest unoccupied molecular orbital show the opposite trend. We fit the experimentally measured conductance data as a function of gate voltage with a Lorentzian function and find the fitting parameters to be in quantitative agreement with self-energy corrected density functional theory calculations of transmission probability across single-molecule junctions. This work shows that electrochemical gating can directly modulate the alignment of the conducting orbital relative to the metal Fermi energy, thereby changing the junction transport properties.

We measure conductance and thermopower of single Au-4,4'-bipyridine-Au junctions in distinct low and high conductance binding geometries accessed by modulating the electrode separation. We use these data to determine the electronic energy level alignment and coupling strength for these junctions, which are known to conduct through the lowest unoccupied molecular orbital (LUMO). Contrary to intuition, we find that, in the high-conductance junction, the LUMO resonance energy is further away from the Au Fermi energy than in the low-conductance junction. However, the LUMO of the high-conducting junction is better coupled to the electrode. These results are in good quantitative agreement with self-energy corrected zero-bias density functional theory calculations. Our calculations show further that measurements of conductance and thermopower in amine-terminated oligophenyl-Au junctions, where conduction occurs through the highest occupied molecular orbitals, cannot be used to extract electronic parameters as their transmission functions do not follow a simple Lorentzian form.

Modeling ferroelectric materials from first principles is one of the successes of density-functional theory, and the driver of much development effort, requiring an accurate description of the electronic processes and the thermodynamic equilibrium that drive the spontaneous symmetry breaking and the emergence of macroscopic polarization. We demonstrate the development and application of an integrated machine learning model that describes on the same footing structural, energetic and functional properties of barium titanate ($\text{BaTiO}_3$), a prototypical ferroelectric. The model uses ab initio calculations as reference and achieves accurate yet inexpensive predictions of energy and polarization on time and length scales that are not accessible to direct ab initio modeling. These predictions allow us to assess the microscopic mechanism of the ferroelectric transition. The presence of an order-disorder transition for the Ti off-centered states is the main driver of the ferroelectric transition, even though the coupling between symmetry breaking and cell distortions determines the presence of intermediate, partly-ordered phases. Moreover, we thoroughly probe the static and dynamical behavior of $\text{BaTiO}_3$ across its phase diagram, without the need to introduce a coarse-grained description of the ferroelectric transition. Finally, we apply the polarization model to calculate dielectric response properties of the material in a fully ab initio manner, again reproducing the correct qualitative experimental behaviour., 26 pages, 14 figures