Search

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.

In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent k → p → method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.