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Transparent, flexible, and chemically stable conducting electrodes are the most important key components for fabricating optoelectronic devices. However, in conventional bulk metal–semiconductor (MS) junctions, Fermi-level pinning is a major concern that limits the charge transport properties of the devices. In this work, we have designed MS junctions using two-dimensional (2D) MXene nanosheets and Al-doped ZnO nanoparticles as a metal and an n-type semiconductor, respectively. The heterojunction was formed by layer-by-layer self-assembly on an indium tin oxide (ITO) substrate and probed by the Pt/Ir scanning tunneling microscopy (STM) tip at room temperature. By recording the tunneling current of the components that in turn yielded the density of states of the materials, we could identify their energy positions to determine the band alignments. We then proceeded to form heterojunctions and characterized their current–voltage characteristics through scanning tunneling spectroscopy. The junctions showed rectification, and the rectification ratio varied with the semiconductor doping concentrations. However, the shift of the Fermi level toward the conduction band edge of the semiconductor reduces the Schottky barrier width and consequently lowers the rectification ratio. Additionally, the MS junction with the poly-allylamine (PAH)-functionalized MXene nanosheets and the ZnO layer show a nonrectifying nature with low contact resistance at the interface. This work shows how a functionalized 2D-metal MXene and doped ZnO nanoparticle can tune the MS junction properties, used for implementing various flexible optoelectronic devices and transistor applications. Post-print / Final draft

A rational synthetic method that produces monodisperse and air-stable metal sulfide colloidal quantum dots (CQDs) in organic nonpolar solvents using octyl dithiocarbamic acid (C8DTCA) as a sulfur source, is reported. The fast decomposition of metal-C8DTCA complexes in presence of primary amines is exploited to achieve this purpose. This novel technique is generic and can be applied to prepare diverse CQDs, like CdS, MnS, ZnS, SnS, and In2S3, including more useful and in-demand PbS CQDs and plasmonic nanocrystals of Cu2S. Based on several control reactions, it is postulated that the reaction involves the in situ formation of a metal–C8DTCA complex, which then reacts in situ with oleylamine at slightly elevated temperature to decompose into metal sulfide CQDs at a controlled rate, leading to the formation of the materials with good optical characteristics. Controlled sulfur precursor’s reactivity and stoichiometric reaction between C8DTCA and metal salts affords high conversion yield and large-scale product...

We form junctions between two single layers of p-type WSe2 and n-type MoS2 in both sequences. The WSe2|MoS2 and MoS2|WSe2 junctions of ultimate thickness limit exhibit current rectification when characterized vertically with a scanning tunneling microscope (STM) tip. The direction of rectification in the pn-junction is opposite to that of the np-junction, confirming occurrence of the rectification to be due to the junctions themselves. From scanning tunneling spectroscopy (STS) and correspondingly the density of states (DOS), we locate the conduction and valence band edges (CB and VB, respectively) of the materials inferring their single-layer and 2H phase configuration. Band edges of the semiconductors form a type-II band alignment resulting in current rectification. In junctions of WSe2 and MoS2 with single layers having a partial overlap, we map band edges along different points on individual semiconductors and the overlapped region (junction). The results have provided experimental evidence of current...

2D molecular materials, namely, metal alkyl thiolates, have been used as a single-source precursor for the synthesis of semiconducting metal sulphide nanocrystals (NCs) by thermal decomposition. These 2D molecular precursors have all the ingredients required for metal sulphide synthesis (metal source, sulphur source and protecting ligand). In this study, we demonstrate a simple and general ‘solvothermal decomposition’ approach for the synthesis of high-quality $$\hbox {Cu}_{2}\hbox {S}$$ , PbS, CdS, MnS and ZnS NCs. The size of the NC can also be controlled by changing the decomposition temperature. Furthermore, the optical properties of the NCs have also been studied.

We map band-edges across a pn-junction that was formed in a nanorod. We form a single junction between p-type Cu2S and n-type CdS through a controlled cationic exchange process of CdS nanorods. We characterize nanorods of the individual materials and the single junction in a nanorod with an ultrahigh vacuum scanning tunneling microscope (UHV-STM) at 77 K. From scanning tunneling spectroscopy and correspondingly the density of states (DOS) spectra, we determine the conduction and valence band-edges at different points across the junction and the individual nanorods. We could map the band-diagram of nanorod-junctions to bring out the salient features of a diode, such as p- and n-sections, band-bending, depletion region, albeit interestingly in the nanoscale.

We formed magnetic moment assisted layer-by-layer (LbL) films of a Prussian Blue analogue (PB). We applied an external magnetic field to each monolayer of PB to orient the magnetic moment of the compound perpendicular to the substrate. Aligned moments or orientation of the magnetic compounds themselves were immobilized in each monolayer, so that the moments could augment formation of the subsequent monolayers of LbL adsorption process. We hence could form multilayered LbL films of PB molecules with their magnetic moments oriented perpendicular to the substrate. We also formed LbL films of the compound with their moments oriented parallel to the substrate and facing one particular direction. We have measured conductivity and dielectric constant of the two types of films and compared the parameters with that of conventional LbL films deposited without orienting magnetic moments of the molecules.

We report controlled formation of heterodimers and their charge separation properties. CdS|CdTe heterodimers were formed through an anionic exchange process of CdS nanostructures. With control over the duration of the anionic exchange process, bulk|dot, bulk|bulk, and then dot|bulk phases of the semiconductors could be observed to have formed. A mapping of density of states as derived from scanning tunneling spectroscopy (STS) brought out conduction and valence band-edges along the nanostructures and heterodimers. The CdS|CdTe heterodimers evidenced a type-II band-alignment between the semiconductors along with the formation of a depletion region at the interface. The width (of the depletion region) and the energy-offset at the interface depended on the size of the semiconductors. We report that the width that is instrumental for photoinduced charge separation in the heterodimers has a direct correlation with the performance of hybrid bulk-heterojunction solar cells based on the nanostructures in a polymer matrix.

We introduce dopants in lead sulfide (PbS) quantum dots (QDs) in forming hybrid bulk-heterojunction (BHJ) solar cells. Because an increase in the content of bismuth as dopants in PbS QDs transforms the intrinsic p-type semiconductor into an n-type one, the band alignment between a conjugated polymer and the doped QDs changes upon doping affecting performance of BHJ solar cells. From scanning tunneling spectroscopy (STS) of the doped QDs, we observe a shift in their Fermi energy leading to formation of a type II band alignment in the polymer:doped-QD interface. We also show that the dopants improve electron-conduction process through the QDs. With the dopants controlling both band alignments at the interface and the conduction process, we show that the dopant concentration in QDs influences open-circuit voltage unfavorably and short-circuit current in a beneficial manner. The device performance of hybrid BHJ solar cells is hence maximized at an optimum concentration of bismuth in PbS QDs.

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

We form pn- and np-junctions between monolayers of p- and n-type nanocrystals that exhibit current rectification in the nanodiodes when characterized with a scanning tunneling microscope (STM) tip. With the use of ferromagnetic nanocrystals, we study the effect of mutual alignment of magnetization vectors on current rectification in the junction between the two nanocrystals. We show that when the magnetization vectors of the p- and of the n-type nanocrystals are parallel to each other (and both facing toward the apex of the STM tip) tunneling current in both bias modes increases with correspondingly a higher rectification ratio. This is in contrast to the parameters of the nanodiodes in which magnetization vectors of the components are unaligned or randomized. To analyze the results, we record scanning tunneling spectroscopy of the monolayer of the components having magnetization vectors aligned or unaligned to locate their valence and conduction band edges and to determine the effect of the alignment on the band edges. Upon alignment of the magnetization vectors of the nanocrystals in a monolayer, the conduction band edge of the p-type and valence band edge of the n-type semiconductor shift towards the Fermi energy leading to a change in energy levels of the pn-junctions and accounting for the improved parameters of the nanodiodes.

In forming donor/acceptor assemblies that act as molecular rectifiers, we have introduced magnetic organic molecules as electron-donating and electron-accepting moieties. We have oriented the magnetic moment of the donor and acceptor components separately and immobilized them (and their moments) so that the molecular assemblies that act as rectifiers could be formed with moments mutually parallel or anti-parallel to each other. We have characterized the molecular assemblies formed on an electrode with a scanning tunneling microscope tip. Such donor/acceptor assemblies with a control over the orientation of moments of the components provided unique systems to study the effect of the nature of alignment on molecular rectifiers. We have observed that the rectification ratio increased in junctions with moments of the components being parallel to each other. The improvement in the rectification ratio has been explained in terms of an efficient electron-transfer process in a moment-aligned junction between the donor and acceptor moieties.