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The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

We design a type of “tandem distributed Bragg reflector (DBR)” that shows advantages over normal DBR in ultraviolet region. We apply a tandem DBR centered at 390 nm to a resonant cavity light emitting diodes model, consequently enhancing the extraction efficiency without detuning the cavity while narrowing the spectral width of the emitted light. The extraction efficiency into a numerical aperture exhibits a 36% increase compared to that of the normal structure. We further demonstrate the potential that the tandem DBRs (centered at 343 nm and 246 nm respectively) have for enhancing the efficiency in GaN-based deep UV device. [ABSTRACT FROM AUTHOR]