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Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25±0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n=1/4. [ABSTRACT FROM AUTHOR]

Non-polar orientations of III-nitride semiconductors have attracted significant interest due to their potential application in optoelectronic devices with enhanced efficiency. Using in situ surface x-ray scattering during metal-organic vapor phase epitaxy (MOVPE) of GaN on non-polar (m-plane) and polar (c-plane) orientations of single crystal substrates, we have observed the homoepitaxial growth modes as a function of temperature and growth rate. On the m-plane surface, we observe all three growth modes (step-flow, layer-by-layer, and three-dimensional) as conditions are varied. In contrast, the +c-plane surface exhibits a direct crossover between step-flow and 3D growth, with no layer-by-layer regime. The apparent activation energy of 2.8 ± 0.2 eV observed for the growth rate at the layer-by-layer to step-flow boundary on the m-plane surface is consistent with those observed for MOVPE growth of other III-V compounds, indicating a large critical nucleus size for islands. [ABSTRACT FROM AUTHOR]

Real-time synchrotron grazing-incidence x-ray fluorescence is employed to study indium adsorption on the GaN (0001) surface under typical process conditions for InGaN metal-organic chemical vapor deposition. An indium condensation boundary is mapped as a function of trimethylindium pressure, substrate temperature, and carrier gas composition. Below the condensation boundary, indium surface coverage reaches a maximum of ∼1/4 ML. The addition of 8% H2 to the carrier gas is found to have a significant effect on both condensation and adsorption of indium. [ABSTRACT FROM AUTHOR]