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1. Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT Slope

Author

Brocard, S., Pala, M.G., Esseni, D., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
indium compounds, MOSFET, III-V semiconductors, nanowires, tunnel transisors, semiconductors heheterojunctions, aluminium compounds, gallium compounds, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Poisson equation, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2013

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