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24 results on '"Misiewicz, J"'

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1. Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model.

2. On the oscillator strength in dilute nitride quantum wells on GaAs.

3. Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence.

4. Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots.

5. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm followed by photoreflectance spectroscopy.

6. Wetting layer states of InAs/GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer.

7. Photoreflectance determination of the wetting layer thickness in the InxGa1-xAs/GaAs quantum dot system for a broad indium content range of 0.3–1.

8. Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction.

9. Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs.

10. The energy-fine structure of GaInNAs/GaAs multiple quantum wells grown at different temperatures and postgrown annealed.

11. Optimizing the InGaAs/GaAs Quantum Dots for 1.3 µm Emission.

12. Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system.

13. Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy.

14. GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm.

15. Temperature dependent surface photovoltage spectra of type I GaAs1-xSbx/GaAs multiple quantum well structures.

16. Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells.

17. Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporation

18. Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates.

19. Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells.

20. Coexistence of nearly free and strongly bound trions from magneto-photoluminescence of two-dimensional quantum structures with tunable electron or hole concentration.

21. Investigations of interface excitons at p-type GaAlAs/GaAs single heterojunctions in continues wave and time resolved magneto photoluminescence experiments.

22. Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates

23. Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

24. Thermal dissociation of free and acceptor-bound positive trions from magnetophotoluminescence studies of high quality GaAs/AlxGa1-xAs quantum wells.

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