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The band-gap (E[sub gp]) and valence band offset (ΔE[sub v]) energies of pseudomorphic GaAsSb layers on GaAs substrate are determined from temperature-dependent photoluminescence measurements on GaAsSb/GaAs and GaAsSb/GaAlAs quantum wells grown by molecular beam epitaxy. A clear evidence of staggered type-II band alignment of GaAsSb relative to GaAs and a value of 1.05 for the valence band offset ratio (Q[sub v]) are proposed. Finally, through a detailed comparison of these values with those published previously, we have shown that the scatter in Q[sub v] found in the literature (<1 to 2.1) is closely dependent on the exact determination of E[sub gp]. Particularly, we have shown that the strain dependence of the deformation potential is important in the calculation of the strain energy contribution to E[sub gp]. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Deals with a study which investigated the optical spin orientation of gallium arsenide short-period lattices. Methods; Results; Discussion.

Presents a study which considered the growth and characterization of indium[sub x]gallium[sub 1-x]arsenide/indium[sub y]gallium[sub 1-y] strained-layer superlattice on indium phosphide substrate. Discussion of the growth; X-ray characterization; Optical characterization.

The first demonstration of a one-step-growth vertical-cavity surface-emitting laser (VCSEL) at 1.56 μm by low-pressure metal-organic vapor phase epitaxy in the InGaAlAs (λgap=1.43 μm)-InAlAs system lattice matched to InP is presented. The VCSEL's threshold current density was 7.5 kA/cm2 and pulsed lasing had been obtained up to +55°C for 45-μm diameter proton implanted devices. This material system represents a high potential for continuous-wave VCSELs at 1.55-μm wavelength using a simple approach for large-scale industrial production [ABSTRACT FROM PUBLISHER]

InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes. [ABSTRACT FROM AUTHOR]

The incorporation of nitrogen in the low percentage range is investigated in a different III-V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and GaInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nitrogen species. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]