Search

We report on generation of high-power near-IR 1- μ m coherent pulsed radiation at high repetition rates, with an Yb:LuPO 4 miniature crystal rod laser that was passively Q -switched with a GaAs semiconductor crystal plate acting as saturable absorber. With 18.8 W of pump power absorbed, 5.0 W of average output power at 1003 nm was generated at a pulse repetition rate of 333.3 kHz; the optical-to-optical and slope efficiencies were 26.6% and 34.0%, respectively. The shortest pulse duration obtained was 68.1 ns. [ABSTRACT FROM AUTHOR]

Low-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO4 miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semiconductor saturable absorber to induce passive Q-switching. With 17.2 W of pump power absorbed in the crystal rod, an average output power of 0.85 W was generated at a repetition rate of 3.7 kHz, the resulting pulse energy, duration, and peak power were 230 μJ, 5.5 ns, and 41.8 kW, respectively. [ABSTRACT FROM PUBLISHER]

We report, for the first time to our knowledge, on the GaAs saturable absorber passive Q-switching laser properties of Yb:Y 3 Ga 5 O 12 , Yb:Lu 3 Ga 5 O 12 , and Yb:Gd 3 Ga 5 O 12 gallium garnet crystals. 1.10–1.53 W of average output power at 1025–1026 nm could be generated at pulse repetition rates ranging from 19.6 to 43.5 kHz. The shortest pulse duration achieved with the three garnets proved to be very close, falling in a range of 3.3–3.5 ns. The largest pulse energy and highest peak power, obtained with Yb:Y 3 Ga 5 O 12 ; Yb:Lu 3 Ga 5 O 12 ; and Yb:Gd 3 Ga 5 O 12 , were respectively, 52.0; 82.4; and 55.0 μ J, and 12.4, 17.0, and 12.7 kW. [ABSTRACT FROM AUTHOR]