Search

Deals with a study which conducted Raman spectroscopy measurements on gallium arsenide:beryllium samples with high crystalline quality and heavy doping level. Epitaxial growth conditions for gallium arsenide; Information on the Raman procedure; Dependence of the Raman intensities on carrier density.

Presents a Raman study that has been performed, under resonant conditions, on a gallium arsenide bevelled-edge layer grown on a silicon substrate to characterize the optical and crystalline properties of the epilayer near the interface. Geometrical characteristics of the sample; Establishment of a theoretical expression for the Raman intensities profile; Absorption coefficient of the gallium-arsenic layer.

Deals with a study which analyzed Raman spectra recorded from (100)-oriented gallium arsenide layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca, Sr) F[sub2]. Electron-phonon interactions and related Raman selection rules; Raman scattering data; Data interpretation; Conclusions.

Reports on the growth of gallium arsenide (GaAs) layers on bulk fluoride substrates. Characteristics of the GaAs layers; Use of Raman and photoluminescence spectrocopies; Improvement of the crystalline quality of GaAs.

Studies Raman scattering by coupled phonon-intersubband plasmon excitations in silicon σ-doped gallium arsenide. Experimental details; Results; Discussion.

Investigates the nucleation of gallium arsenide (GaAs) on silicon (Si) in molecular-beam epitaxy by Auger electron spectrometry and reflection high-energy electron diffraction. Restoration of stoichiometry and monocrystallinity; Description of the initial stages of GaAs/Si growth.

Describes the basic operation of a novel gallium indium nitrogen arsenide/gallium arsenide based light emitting/absorbing device operating at 1250 nm. Features of the device; Components; Electroluminescene.

Reports the Raman spectroscopy measurements in silicon delta-doped gallium arsenide. Observation of the coupling of the intersubband plasmons with polar phonons; Application of molecular beam epitaxy; Estimation of the quasi-two-dimensional electron gas using depth analysis.

The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time the anomalous small angle X-ray scattering (ASAXS). All the results agree that the average size increases with increasing annealing temperature but the ASAXS data indicate that the precipitates can be divided into two parts described by separate size distributions. The number density of precipitates around 5 nm size has been estimated to be at least two orders of magnitude higher than that of larger precipitates. [Copyright &y& Elsevier]