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Your search keyword '"Tanoue H"' showing total 2 results
Start Over Author "Tanoue H" Topic gallium
2 results on '"Tanoue H"'

1. Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular-beam epitaxy.

Author

Kim, S. G., Asahi, H., Seta, M., Emura, S., Watanabe, H., Gonda, S., and Tanoue, H.

Subjects
MOLECULAR beam epitaxy, GALLIUM, RAMAN effect, IONS
Abstract

Presents a study which examined the radiation damage and its recovery process of molecular-beam epitaxy grown AlSb implanted with gallium (Ga) ions using Raman scattering for Ga ion fluences. Details of an experiment on AlSb samples; Depiction of the unpolarized Raman scattering spectrum for the as-grown AlSb layer with an InAs cap layer; Plot of the annealing-temperature variation of the AlSb longitudinal mode.

Published
1993
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2. Raman scattering study of the recovery process in Ga ion implanted GaSb.

Author

Kim, S. G., Asahi, H., Seta, M., Takizawa, J., Emura, S., Soni, R. K., Gonda, S., and Tanoue, H.

Subjects
GALLIUM, CRYSTALS, ION implantation, ANNEALING of crystals
Abstract

Focuses on a study that discussed the recovery process in gallium antimonide (GaSb) crystals with gallium ion implantation and subsequent annealing by rapid thermal annealing or furnace annealing methods. Condition of the recovery processes in the gallium ion implanted GaSb in face-to-face furnace annealing; Importance of ion implantation; Features of GaSb.

Published
1993
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