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Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformation. Through the first-principle calculations, our idea is illustrated by a concrete example of $\mathrm{VSi_2P_4}$ monolayer. The increasing electric field can induce a transition of MA from in-plane to out-of-plane by changing magnetic anisotropy energy (MAE) from negative to positive value, which is mainly due to increasing magnetocrystalline anisotropy (MCA) energy. The out-of-plane magnetization is in favour of spontaneous valley polarization in $\mathrm{VSi_2P_4}$. Within considered electric field range, $\mathrm{VSi_2P_4}$ is always ferromagnetic (FM) ground state. In a certain range of electric field, the coexistence of semiconductor and out-of-plane magnetization makes $\mathrm{VSi_2P_4}$ become a true ferrovalley (FV) material. The anomalous valley Hall effect (AVHE) can be observed under in-plane and out-of-plane electrical field in $\mathrm{VSi_2P_4}$. Our works pave the way to design the ferrovalley material by electric field., Comment: 6 pages, 6 figures. arXiv admin note: text overlap with arXiv:2207.13420

The valley degrees of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize the valley polarization. Here, we propose a model that the valley polarization transition at different valley points (-K and K points) is produced by biaxial strain. By the first-principle calculations, we illustrate our idea with a concrete example of Janus $\mathrm{GdClF}$ monolayer. The predicted $\mathrm{GdClF}$ monolayer is dynamically, mechanically and thermally stable, and is a ferromagnetic (FM) semiconductor with perpendicular magnetic anisotropy (PMA), valence band maximum (VBM) at valley points and high Curie temperature ($T_C$). Due to its intrinsic ferromagnetism and spin orbital coupling (SOC), a spontaneous valley polarization will be induced, but the valley splitting is only -3.1 meV, which provides an opportunity to achieve valley polarization transition at different valley points by strain. In considered strain range ($a/a_0$: 0.94$\sim$1.06), the strained GdClF monolayer has always energy bandgap, strong FM coupling and PMA. The compressive strain is in favour of -K valley polarization, while the tensile strain makes for K valley polarization. The corresponding valley splitting at 0.96 and 1.04 strain are -44.5 meV and 29.4 meV, which are higher than the thermal energy of room temperature (25 meV). Due to special Janus structure, both in-plane and out-of-plane piezoelectric polarizations can be observed. It is found that the direction of in-plane piezoelectric polarizations can be overturned by strain, and the $d_{11}$ at 0.96 and 1.04 strain are -1.37 pm/V and 2.05 pm/V. Our works pave the way to design the ferrovalley material as multifunctional valleytronics and piezoelectric devices by strain., Comment: 9 pages, 10 figures. arXiv admin note: text overlap with arXiv:2109.13534

Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work, we demonstrate that Janus monolayer YBrI is a PFM, which is dynamically, mechanically and thermally stable. Electronic correlation effects on physical properties of YBrI are investigated by using generalized gradient approximation plus $U$ (GGA+$U$) approach. For out-of-plane magnetic anisotropy, YBrI is a ferrovalley (FV) material, and the valley splitting is larger than 82 meV in considered $U$ range. The anomalous valley Hall effect (AVHE) can be achieved under an in-plane electric field. However, for in-plane magnetic anisotropy, YBrI is a common ferromagnetic (FM) semiconductor. When considering intrinsic magnetic anisotropy, the easy axis of YBrI is always in-plane with magnetic anisotropy energy (MAE) from 0.309 meV to 0.237 meV ($U$=0.0 eV to 3.0 eV). However, the magnetization can be adjusted from the in-plane to off-plane direction by external magnetic field, and then lead to the occurrence of valley polarization. Moreover, missing centrosymmetry along with mirror symmetry breaking results in both in-plane and out-of-plane piezoelectricity in YBrI monolayer. At a typical $U$=2.0 eV, the $d_{11}$ is predicted to be -5.61 pm/V, which is higher than or compared with ones of other two-dimensional (2D) known materials. The electronic and piezoelectric properties of YBrI can be effectively tuned by applying a biaxial strain. For example, tensile strain can enhance valley splitting and $d_{11}$ (absolute value). The predicted Curie temperature of YBrI is higher than those of experimentally synthesized 2D ferromagnetic materials $\mathrm{CrI_3}$ and $\mathrm{Cr_2Ge_2Te_6}$., 10 pages, 12 figures

Strong structural asymmetry is actively explored in two-dimensional (2D) materials, because it can give rise to many interesting physical properties. Motivated by the recent synthesis of monolayer $\mathrm{Si_2Te_2}$, we explore a family of 2D materials, termed as the Janus Si dichalcogenides (JSD), which parallel the Janus transition metal dichalcogenides and exhibit even stronger inversion asymmetry. Using first-principles calculations, we demonstrate excellent stability of these materials. We show that their strong structural asymmetry leads to pronounced intrinsic polar field, sizable spin splitting due to spin-orbit coupling, and large piezoelectric response. The spin splitting involves an out-of-plane component, which is beyond the linear Rashba model. The piezoelectric tensor has large value in both in-plane $d_{11}$ coefficient and out-of-plane $d_{31}$ coefficient, making the monolayer JSDs distinct among the existing 2D piezoelectrics. In addition, we find interesting strain-induced phase transitions in these materials. Particularly, there are multiple valleys in the conduction band that compete for the conduction band minimum, which will lead to notable changes in optical and transport properties under strain. Our work reveals a new family of Si based 2D materials, which could find promising applications in spintronic and piezoelectric devices., 8 pages, 8 figures

Two-dimensional (2D) ferromagnets have been a fascinating subject of research, and magnetic anisotropy (MA) is indispensable for stabilizing the 2D magnetic order. Here, we investigate magnetic anisotropy energy (MAE), magnetic and electronic properties of $\mathrm{VSi_2P_4}$ by using the generalized gradient approximation plus $U$ (GGA+$U$) approach. For large $U$, the magnetic shape anisotropy (MSA) energy has a more pronounced contribution to the MAE, which can overcome the magnetocrystalline anisotropy (MCA) energy to evince an easy-plane. For fixed out-of-plane MA, monolayer $\mathrm{VSi_2P_4}$ undergoes ferrovalley (FV), half-valley-metal (HVM), valley-polarized quantum anomalous Hall insulator (VQAHI), HVM and FV states with increasing $U$. However, for assumptive in-plane MA, there is no special quantum anomalous Hall (QAH) state and spontaneous valley polarization within considered $U$ range. According to the MAE and electronic structure with fixed out-of-plane or in-plane MA, the intrinsic phase diagram shows common magnetic semiconductor (CMS), FV and VQAHI in monolayer $\mathrm{VSi_2P_4}$. At representative $U$$=$3 eV widely used in references, $\mathrm{VSi_2P_4}$ can be regarded as a 2D-$XY$ magnet, not Ising-like 2D long-range order magnets predicted in previous works with only considering MCA energy. Our findings shed light on importance of MSA in determining magnetic and electronic properties of monolayer $\mathrm{VSi_2P_4}$., 7 pages,7 figures. arXiv admin note: text overlap with arXiv:2205.07012

The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from $\mathrm{VCCl_2}$, which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with gap value of 57 meV, which is different from Dirac semimetal $\mathrm{VCCl_2}$. The gap of VCClBr is due to built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by external-electric-field induced gap in $\mathrm{VCCl_2}$. When including SOC, the gap of VCClBr is improved to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by $Z_2$ topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric field. Due to broken horizontal mirror symmetry, only out-of-plane piezoelectric response can be observed, when biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients $d_{31}$ and $d_{32}$ are -0.425 pm/V and -0.219 pm/V, which are higher than or compared with ones of many 2D materials. Finally, another two Janus monolayer VCFBr and VCFCl (dynamically unstable) are constructed, and they are still PQSHIs. Moreover, their $d_{31}$ and $d_{32}$ are higher than ones of VCClBr, and the $d_{31}$ (absolute value) of VCFBr is larger than one., 10 pages, 12 figures

The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an in-plane FM semiconductor Janus monolayer NiClI with considerably large magnetic anisotropy energy (MAE) of 1.439 meV, exhibiting dynamic, mechanical and thermal stabilities. The NiClI monolayer possesses larger in-plane piezoelectricity ($d_{11}$$=$5.21 pm/V) comparable to that of $\mathrm{MoS_2}$. Furthermore, NiClI has huge out-of-plane piezoelectricity ($d_{31}$$=$1.89 pm/V), which is highly desirable for ultrathin piezoelectric device application. It is proved that huge out-of-plane piezoelectricity is robust against electronic correlation, which confirms reliability of huge $d_{31}$. Finally, being analogous to NiClI, PFM with large out-of-plane piezoelectricity can also be achieved in the Janus monolayers of NiClBr and NiBrI, with the predicted $d_{31}$ of 0.73 pm/V and 1.15 pm/V, respectively. The predicted huge out-of-plane piezoelectric response makes Janus monolayer NiClI a good platform for multifunctional semiconductor spintronic applications, which is also compatible with the bottom/top gate technologies of conventional semiconductor nanoelectronic devices., 6 pages, 4 figures

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$\alpha_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology., Comment: 30 pages, 7 figures

Recently, the quantum anomalous Hall (QAH) insulators are predicted in Lithium-decorated iron-based superconductor monolayer materials (LiFeX (X=S, Se and Te)) with very high Curie temperature (\textcolor[rgb]{0.00,0.00,1.00}{PRL 125, 086401 (2020)}), which combines the topological and ferromagnetic (FM) orders. It is interesting and useful to achieve coexistence of intrinsic piezoelectricity, ferromagnetism and nontrivial band topology in single two-dimensional (2D) material, namely 2D piezoelectric quantum anomalous hall insulator (PQAHI). In this work, 2D Janus monolayer $\mathrm{Li_2Fe_2SSe}$ is predict to be a room-temperature PQAHI, which possesses dynamic, mechanical and thermal stabilities. It is predicted to be a half Dirac semimetal without spin-orbit coupling (SOC). It is found that the inclusion of SOC opens up a large nontrivial gap, which means the nontrivial bulk topology (QAH insulator), confirmed by the calculation of Berry curvature and the presence of two chiral edge states (Chern number C=2). Calculated results show that monolayer $\mathrm{Li_2Fe_2SSe}$ possesses robust QAH states against biaxial strain and electronic correlations. Compared to LiFeX, the glide mirror $G_z$ of $\mathrm{Li_2Fe_2SSe}$ disappears, which will induce only out-of-plane piezoelectric response. The calculated out-of-plane $d_{31}$ of monolayer $\mathrm{Li_2Fe_2SSe}$ is -0.238 pm/V comparable with ones of other 2D known materials. Moreover, very high Curie temperature (about 1000 K) is predicted by using Monte Carlo (MC) simulations, which means that the QAH effect can be achieved at room temperature in Janus monolayer $\mathrm{Li_2Fe_2SSe}$. Similar to monolayer $\mathrm{Li_2Fe_2SSe}$, the PQAHI can also be realized in the Janus monolayer $\mathrm{Li_2Fe_2SeTe}$., Comment: 10 pages, 14 figures. arXiv admin note: text overlap with arXiv:2105.03004

Achieving combination of spin and valley polarized states with topological insulating phase is pregnant to promote the fantastic integration of topological physics, spintronics and valleytronics. In this work, a spin-valley-coupled quantum spin Hall insulator (svc-QSHI) is predicted in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ with dynamic, mechanical and thermal stabilities. The inequivalent valleys have opposite Berry curvature and spin moment, which can produce a spin-valley Hall effect. In the center of Brillouin zone, a Rashba-type spin splitting can be observed due to missing horizontal mirror symmetry. Moreover, monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ shows unique Rashba-splitting edge states. Both energy band gap and spin-splitting at the valley point are larger than the thermal energy of room temperature (25 meV) with generalized gradient approximation (GGA) level, which is very important at room temperature for device applications. It is proved that the spin-valley-coupling and nontrivial quantum spin Hall (QSH) state are robust again biaxial strain. Our work may provide a new platform to achieve integration of topological physics, spintronics and valleytronics., Comment: 6 pages, 7 figures

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$, and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with strain range of 0\% to 4\%. The calculated piezoelectric strain coefficients $d_{11}$ for 1\%, 2\% and 3\% strains are 4.61 pm/V, 4.94 pm/V and 5.27 pm/V, respectively, which are greater than or close to a typical value of 5 pm/V for bulk piezoelectric materials. Finally, similar to $\mathrm{VSi_2P_4}$, the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the $\mathrm{VSi_2N_4}$ monolayer. Our works show that $\mathrm{VSi_2P_4}$ in FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices., 6 pages,7 figures

Transition Metal Dichalcogenide (TMD) monolayers have most widely studied due to their unique physical properties. Recently, Janus TMD Monolayer MoSSe with sandwiched S-Mo-Se structure has been synthesized by replacing the top S atomic layer in $\mathrm{MoS_2}$ with Se atoms. In this work, we systematically investigate the phonon transport and lattice thermal conductivity ($\kappa_L$) of MoSSe monolayer by first-principles calculations and linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA). Calculated results show that the $\kappa_L$ of MoSSe monolayer is very lower than that of $\mathrm{MoS_2}$ monolayer, and higher than that of $\mathrm{MoSe_2}$ monolayer. The corresponding sheet thermal conductance of MoSSe monolayer is 342.50 $\mathrm{W K^{-1}}$ at room temperature. These can be understood by phonon group velocities and lifetimes. Compared with $\mathrm{MoS_2}$ monolayer, the smaller group velocities and shorter phonon lifetimes of MoSSe monolayer give rise to lower $\kappa_L$. The larger group velocities for MoSSe than $\mathrm{MoSe_2}$ monolayer is main reason of higher $\kappa_L$. The elastic properties of $\mathrm{MoS_2}$, MoSSe and $\mathrm{MoSe_2}$ monolayers are also calculated, and the order of Young's modulus is identical with that of $\kappa_L$. Calculated results show that isotope scattering leads to 5.8\% reduce of $\kappa_L$. The size effects on the $\kappa_L$ are also considered, which is usually used in the device implementation. When the characteristic length of MoSSe monolayer is about 110 nm, the $\kappa_L$ reduces to half. These results may offer perspectives on thermal management of MoSSe monolayer for applications of thermoelectrics, thermal circuits and nanoelectronics, and motivate further theoretical or experimental efforts to investigate thermal transports of Janus TMD monolayers., Comment: 7 pages, 8 figures

Janus two-dimensional (2D) materials have attracted much attention due to possessing unique properties caused by their out-of-plane asymmetry, which have been achieved in many 2D families. In this work, the Janus monolayers are predicted in new 2D $\mathrm{MA_2Z_4}$ family by means of first-principles calculations, $\mathrm{MoSi_2N_4}$ and $\mathrm{WSi_2N_4}$ of which have been synthesized in experiment(\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}). The predicted $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers exhibit dynamic, thermodynamical and mechanical stability, and they are indirect band-gap semiconductors. The inclusion of spin-orbit coupling (SOC) gives rise to the Rashba-type spin splitting, which is observed in the valence bands, being different from common conduction bands. Calculated results show valley polarization at the edge of the conduction bands due to SOC together with inversion symmetry breaking. It is found that $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers have high electron mobilities. Both in-plane and much weak out-of-plane piezoelectric polarizations can be observed, when a uniaxial strain in the basal plane is applied. The values of piezoelectric strain coefficient $d_{11}$ of the Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers fall between those of the $\mathrm{MSi_2N_4}$ (M=Mo and W) and $\mathrm{MGe_2N_4}$ (M=Mo and W) monolayers, as expected. It is proved that strain can tune the positions of valence band maximum (VBM) and conduction band minimum (CBM), and enhance the the strength of conduction bands convergence caused by compressive strain. It is also found that tensile biaxial strain can enhance $d_{11}$ of $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers, and the compressive strain can improve the $d_{31}$ (absolute values)., Comment: 10 pages, 11 figures

Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ by density functional theory (DFT). With $a/a_0$ from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum (CBM). Calculated results show that the $\mathrm{MoSi_2N_4}$ monolayer is mechanically stable in considered strain range. It is found that the spin-orbital coupling (SOC) effects on Seebeck coefficient depend on the strain. In unstrained $\mathrm{MoSi_2N_4}$, the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied, for example 0.96 strain. The compressive strain can change relative position and numbers of conduction band extrema (CBE), and then the strength of conduction bands convergence can be enhanced, to the benefit of n-type $ZT_e$. Only about 0.96 strain can effectively improve n-type $ZT_e$. Our works imply that strain can effectively tune the electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$, and can motivate farther experimental exploration., Comment: 7 pages,7 figures

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential application in electronics, optoelectronics and piezoelectronics. In this work, Janus SnSSe monolayer is predicted by means of first-principles calculations, which exhibits dynamic and mechanical stability. By using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC), the Janus SnSSe monolayer is found to be an indirect band-gap semiconductor, whose gap can easily be tuned by strain. High carrier mobilities are obtained for SnSSe monolayer, and the hole mobility is higher than the electron mobility. For SnSSe monolayer, a uniaxial strain in the basal plane can induce both strong in-plane and much weaker out-of-plane piezoelectric polarizations, which reveals the potential as a piezoelectric two-dimensional (2D) material. The high absorption coefficients in the visible light region are observed, suggesting a potential photocatalytic application. Calculated results show that SnSSe monolayer has very high power factor, making it a promising candidate for thermoelectric applications. Our works reveal that the Janus SnSSe structure can be fabricated with unique electronic, optical, piezoelectric and transport properties, and can motivate related experimental works., 9 pages, 10 figures

A two-dimensional (2D) material system with both piezoelectricity and ferromagnetic (FM) order, referred to as a 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for intriguing physics. Inspired by experimentally synthesized Janus monolayer MoSSe from $\mathrm{MoS_2}$, in this work, the Janus monolayer $\mathrm{CrBr_{1.5}I_{1.5}}$ with dynamic, mechanical and thermal stabilities is predicted, which is constructed from synthesized ferromagnetic $\mathrm{CrI_3}$ monolayer by replacing the top I atomic layer with Br atoms. Calculated results show that monolayer $\mathrm{CrBr_{1.5}I_{1.5}}$ is an intrinsic FM half semiconductor with valence and conduction bands being fully spin-polarized in the same spin direction. Furthermore, monolayer $\mathrm{CrBr_{1.5}I_{1.5}}$ possesses a sizable magnetic anisotropy energy (MAE). By symmetry analysis, it is found that both in-plane and out-of-plane piezoelectric polarizations can be induced by a uniaxial strain in the basal plane. The calculated in-plane $d_{22}$ value of 0.557 pm/V is small. However, more excitingly, the out-of-plane $d_{31}$ is as high as 1.138 pm/V, which is obviously higher compared with ones of other 2D known materials. The strong out of-plane piezoelectricity is highly desirable for ultrathin piezoelectric devices. Moreover, strain engineering is used to tune piezoelectricity of monolayer $\mathrm{CrBr_{1.5}I_{1.5}}$. It is found that compressive strain can improve the $d_{22}$, and tensile strain can enhance the $d_{31}$. A FM order to antiferromagnetic (AFM) order phase transition can be induced by compressive strain, and the critical point is about 0.95 strain. That is to say that a 2D piezoelectric antiferromagnetism (PAFM) can be achieved by compressive strain, and the corresponding $d_{22}$ and $d_{31}$ are 0.677 pm/V and 0.999 pm/V at 0.94 strain, respectively., 10 pages, 15 figures

We investigate the spin-orbit coupling (SOC) effects on the electronic structures and semi-classic transport coefficients of half-Heusler $\mathrm{ANiB}$ (A=Ti, Hf, Sc, Y; B=Sn, Sb, Bi) by using generalized gradient approximation (GGA). Calculated results show that SOC splits the valence bands at high symmetry $\Gamma$ point, and modifies the outline of $\Gamma$-centered valence bands, which has remarkable effects on the electron transport properties. Thermoelectric properties are performed through solving Boltzmann transport equations within the constant scattering time approximation. It is found that the compounds containing Sn atom have larger power factor in p-type doping than ones in n-type doping, and it is just the opposite for compounds containing Sb and Bi elements. The SOC has obvious detrimental influence on power factor in p-type doping, while has a negligible effect in n-type doping. These can be understood by considering the effects of SOC on the valence bands and conduction bands. The maximum power factors (MPF) are extracted in n-type and p-type doping with GGA and GGA+SOC, and the MPF at 300 K with SOC is predicted to be about 4.25\%$\sim$44.13\% smaller than that without SOC in the case of p-type doping for $\mathrm{ANiB}$ (A=Ti, Hf, Sc, Y; B=Sn, Sb, Bi). Therefore, it is crucial to consider SOC effects for theoretical analysis in the case of p-type doping in half-Heusler compounds composed of heavy elements., Comment: 5 pages, 5 figures in Journal of Alloys and Compounds (2016)

For two-dimensional (2D) materials, a pure large out-of-plane piezoelectric response, compatible with the nowadays bottom/top gate technologies, is highly desired. In this work, the piezoelectric properties of penta-graphene (CCC) monolayer are studied with pure out-of-plane piezoelectric effect by density functional theory (DFT). However, the $d_{36}$ is very small, and only -0.065 pm/V. Two strategies are proposed to enhance piezoelectric properties of CCC monolayer. Firstly, both biaxial and uniaxial strains are applied, but the enhancement is very small, and at -2\% biaxial (-4\% uniaxial) strain, the $d_{36}$ is increased only by 3.1\% (13.9\%). Secondly, a Janus penta-monolayer (CCB) is constructed by replacing the top C (B) atomic layer in monolayer CCC [pentagonal $\mathrm{CB_2}$ monolayer (CBB)] with B (C) atoms, which shows dynamic and mechanical stability. Fortunately, the pure out-of-plane piezoelectric effect of CCB monolayer still holds, and exhibits a band gap. The calculated $d_{31}$ and $d_{32}$ are -0.505 pm/V and 0.273 pm/V, respectively, which are very larger than $d_{36}$ of CCC monolayer. The out-of-plane piezoelectricity $d_{31}$ of CCB monolayer is obviously higher compared with many other 2D known materials. Moreover, its room-temperature electronic mobility along y direction is as high as 8865.23 $\mathrm{cm^2V^{-1}s^{-1}}$. Our works provide a new way to achieve pure out-of-plane piezoelectric effect, which is highly desirable for ultrathin piezoelectric devices., Comment: 7 pages, 7 figures

The absence of both the inversion symmetry and out-of-plane mirror symmetry together with spin-orbit coupling (SOC) can induce novel electronic and piezoelectric properties. In this work, the piezoelectric properties along with carrier mobilities of Janus monolayer XTeI (X=Sb and Bi) are studied by density functional theory (DFT). By using generalized gradient approximation (GGA) plus SOC, they are found to be indirect gap semiconductors with the Rashba spin splitting. The piezoelectric tensors of Janus monolayer XTeI (X=Sb and Bi) are reported by using density functional perturbation theory (DFPT). Due to lacking both the inversion symmetry and out-of-plane mirror symmetry for Janus monolayer XTeI (X=Sb and Bi), both in-plane and out-of-plane piezoelectric effects can be observed, and the large piezoelectric coefficients are predicted (e.g. $d_{11}$=12.95 pm/V for SbTeI and $d_{11}$=8.20 pm/V for BiTeI), which are comparable and even higher than ones of many other two-dimensional (2D) materials and other well-known bulk piezoelectric materials, especially for out-of-plane piezoelectric coefficients. With GGA+SOC, the high electron carrier mobilities are obtained, and the electron mobility of BiTeI along armchair direction reaches up to about 1319 $\mathrm{cm^2V^{-1}s^{-1}}$. The carrier mobility shows a rather pronounced anisotropy between electron and hole/armchair and zigzag directions. It is found that tensile strain can improve the piezoelectric coefficients $d_{11}$ of Janus monolayer XTeI (X=Sb and Bi). For example, at 4\% strain, the $d_{11}$ of SbTeI (BiTeI) is up to 20.12 pm/V (11.48 pm/V), compared with unstrained 12.95 pm/V (8.20 pm/V). Our works imply Janus monolayer XTeI (X=Sb and Bi) have potential applications in flexible electronics and piezoelectric devices, and can stimulate further experimental works., 8 pages, 5 figures

An increasing number of two-dimensional (2D) materials have already been achieved experimentally or predicted theoretically, which have potential applications in nano- and opto-electronics. Various applications for electronic devices are closely related to their thermal transport properties. In this work, the strain dependence of phonon transport in monolayer SiC with a perfect planar hexagonal honeycomb structure is investigated by solving the linearized phonon Boltzmann equation. It is found that room-temperature lattice thermal conductivity ($\kappa_L$) of monolayer SiC is two orders of magnitude lower than that of graphene. The low $\kappa_L$ is due to small group velocities and short phonon lifetimes, which can also be explained by polarized covalent bond due to large charge transfer from Si to C atoms. In considered strain range, it is proved that the SiC monolayer is mechanically and dynamically stable. With increased tensile strain, the $\kappa_L$ of SiC monolayer shows an unusual nonmonotonic up-and-down behavior, which is due to the competition between the change of phonon group velocities and phonon lifetimes of low frequency phonon modes. At low strains ($$8\%) the reduction of group velocities as well as the decrease of the phonon lifetimes are the major mechanism responsible for decreased $\kappa_L$. Our works further enrich studies on phonon transports of 2D materials with a perfect planar hexagonal honeycomb structure, and motivate farther experimental studies., Comment: 8 pages, 14 figures

Tuning physical properties of transition metal dichalcogenide (TMD) monolayers by strain engineering have most widely studied, and recently Janus TMD monolayer MoSSe has been synthesized. In this work, we systematically study biaxial strain dependence of electronic structures and transport properties of Janus TMD MXY (M = Mo or W, X/Y = S, Se, or Te) monolayer by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). It is found that SOC has a noteworthy detrimental influence on power factor in p-type MoSSe, WSSe, n-type WSTe, p-type MoSeTe and WSeTe, and has a negligible influence on one in n-type MoSSe, MoSTe, p-type WSTe and n-type MoSeTe. These can be understood by considering SOC effects on their valence and conduction bands. For all six monolayers, the energy band gap firstly increases, and then decreases, when strain changes from compressive one to tensile one. It is found that strain can tune strength of bands convergence of both valence and conduction bands by changing the numbers and relative position of valence band extrema (VBE) or conduction band extrema (CBE), which can produce very important effects on their electronic transport properties. By applying appropriate compressive or tensile strain, both n- or p-type Seebeck coefficient can be enhanced by strain-induced band convergence, and then the power factor can be improved. Our works further enrich studies on strain dependence of electronic structures and transport properties of new-style TMD monolayers, and motivate farther experimental works., 6 pages, 6 figures

Due to potential applications in nano- and opto-electronics, two-dimensional (2D) materials have attracted tremendous interest. Their thermal transport properties are closely related to the performance of 2D materials-based devices. Here, the phonon transports of monolayer GeC with a perfect planar hexagonal honeycomb structure are investigated by solving the linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA). Without inclusion of Born effective charges ($Z^*$) and dielectric constants ($\varepsilon$), the lattice thermal conductivity ($\kappa_L$) almost decreases linearly above 350 K, deviating from the usual $\kappa_L$$\sim$$1/T$ law. The underlying mechanism is because the contribution to $\kappa_L$ from high-frequency optical phonon modes increases with increasing temperature, and the contribution exceeds one from acoustic branches at high temperature. These can be understood by huge phonon band gap caused by large difference in atom mass between Ge and C atoms, which produces important effects on scattering process involving high-frequency optical phonon. When considering $Z^*$ and $\varepsilon$, the phonon group velocities and phonon lifetimes of high-frequency optical phonon modes are obviously reduced with respect to ones without $Z^*$ and $\varepsilon$. The reduced group velocities and phonon lifetimes give rise to small contribution to $\kappa_L$ from high-frequency optical phonon modes, which produces the the traditional $\kappa_L$$\sim$$1/T$ relation in monolayer GeC. Calculated results show that the isotope scattering can also reduce anomalous temperature dependence of $\kappa_L$ in monolayer GeC. Our works highlight the importance of $Z^*$ and $\varepsilon$ to investigate phonon transports of monolayer GeC., Comment: 7 pages, 9 figures

Topological semimetals are currently attracting increasing interest due to their potential applications in topological qubits and low-power electronics, which are closely related to their thermal transport properties. In this work, by solving the Boltzmann transport equation based on first-principles calculations, we systematically investigate the phonon transport properties of topological semimetal WC and WN. The predicted room-temperature lattice thermal conductivities of WC (WN) along a and c directions are 1140.64 (7.47) $\mathrm{W m^{-1} K^{-1}}$ and 1214.69 (5.39) $\mathrm{W m^{-1} K^{-1}}$. Considering the similar crystal structure of WC and WN, it is quite interesting to find that the thermal conductivity of WC is more than two orders of magnitude higher than that of WN. It is found that, different from WN, the large acoustic-optical (a-o) gap prohibits the acoustic+acoustic$\rightarrow$optical (aao) scattering, which gives rise to very long phonon lifetimes, leading to ultrahigh lattice thermal conductivity in WC. For WN, the lack of a-o gap is due to soft phonon modes in optical branches, which can provide more scattering channels for aao scattering, producing very short phonon lifetimes. Further deep insight can be attained from their different electronic structures. Distinctly different from that in WC, the density of states (DOS) of WN at the Fermi level becomes very sharp, which leads to destabilization of WN, producing soft phonon modes. It is found that the small shear modulus $G$ and $C_{44}$ limit the stability of WN, compared with WC. Our works provide valuable information for phonon transports in WC and WN, and motivate further experimental works to study their lattice thermal conductivities., 7 pages, 9 figures

Phonon transports of group-VA elements (As, Sb, Bi) monolayer semiconductors have been widely investigated in theory, and Sb monolayer (antimonene) of them has recently been synthesized. In this work, phonon transport of SbAs monolayer is investigated from a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of SbAs monolayer is lower than ones of both As and Sb monolayers, and the corresponding sheet thermal conductance is 28.8 $\mathrm{W K^{-1}}$ at room temperature. Calculated results show that group velocities of SbAs monolayer are between ones of As and Sb onolayers, but phonon lifetimes of SbAs are smaller than ones of both As and Sb monolayers. Hence, low lattice thermal conductivity in SbAs monolayer is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4\%, which is obviously different from ones of As and Sb monolayers with very large contribution. This can be explained by very small phonon lifetimes for ZA branch of SbAs monolayer. The large charge transfer from Sb to As atoms leads strongly polarized covalent bond, being different from As or Sb monolayer. The strongly polarized covalent bond of SbAs monolayer can induce stronger phonon anharmonicity than As or Sb monolayer, leading to lower lattice thermal conductivity. It is found that isotope scattering produces neglectful effect, and the lattice thermal conductivity with the characteristic length smaller than 30 nm can reach a decrease of about 47\%. These results may offer perspectives on tuning lattice thermal conductivity by mixture of multi-elements for applications of thermal management and thermoelectricity, and motivate further experimental efforts to synthesize monolayer SbAs., 7 pages, 8 figures

Topological semimetal may have potential applications like topological qubits, spintronics and quantum computations. Efficient heat dissipation is a key factor for the reliability and stability of topological semimetal-based nano-electronics devices, which is closely related to high thermal conductivity. In this work, the elastic properties and lattice thermal conductivity of TaN are investigated by first-principles calculations and the linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA). According to the calculated bulk modulus, shear modulus and $C_{44}$, TaN can be regarded as a potential incompressible and hard material. The room-temperature lattice thermal conductivity is predicted to be 838.62 $\mathrm{W m^{-1} K^{-1}}$ along a axis and 1080.40 $\mathrm{W m^{-1} K^{-1}}$ along c axis, showing very strong anisotropy. It is found that the lattice thermal conductivity of TaN is several tens of times higher than one of other topological semimetal, such as TaAs, MoP and ZrTe, which is due to very longer phonon lifetimes for TaN than other topological semimetal. The very different atomic masses of Ta and N atoms lead to a very large acoustic-optical band gap, and then prohibits the scattering between acoustic and optical phonon modes, which gives rise to very long phonon lifetimes. Based on mass difference factor, the WC and WN can be regarded as potential candidates with ultrahigh lattice thermal conductivity. Calculated results show that isotope scattering has little effect on lattice thermal conductivity, and that phonon with mean free path(MFP) larger than 20 (80) $\mathrm{\mu m}$ at 300 K has little contribution to the total lattice thermal conductivity. This work implies that TaN-based nano-electronics devices may be more stable and reliable due to efficient heat dissipation., Comment: 8 pages, 9 figures

Topological semimetal may have substantial applications in electronics, spintronics and quantum computation. Recently, ZrTe is predicted as a new type of topological semimetal due to coexistence of Weyl fermion and massless triply degenerate nodal points. In this work, the elastic and transport properties of ZrTe are investigated by combining the first-principles calculations and semiclassical Boltzmann transport theory. Calculated elastic constants prove mechanical stability of ZrTe, and the bulk modulus, shear modulus, Young's modulus and Possion's ratio also are calculated. It is found that spin-orbit coupling (SOC) has slightly enhanced effects on Seebeck coefficient, which along a(b) and c directions for pristine ZrTe at 300 K is 46.26 $\mu$V/K and 80.20 $\mu$V/K, respectively. By comparing the experimental electrical conductivity of ZrTe (300 K) with calculated value, the scattering time is determined for 1.59 $\times$ $10^{-14}$ s. The predicted room-temperature electronic thermal conductivity along a(b) and c directions is 2.37 $\mathrm{W m^{-1} K^{-1}}$ and 2.90 $\mathrm{W m^{-1} K^{-1}}$, respectively. The room-temperature lattice thermal conductivity is predicted as 17.56 $\mathrm{W m^{-1} K^{-1}}$ and 43.08 $\mathrm{W m^{-1} K^{-1}}$ along a(b) and c directions, showing very strong anisotropy. Calculated results show that isotope scattering produces observable effect on lattice thermal conductivity. It is noted that average room-temperature lattice thermal conductivity of ZrTe is slightly higher than that of isostructural MoP, which is due to larger phonon lifetimes and smaller Gr$\mathrm{\ddot{u}}$neisen parameters. Finally, the total thermal conductivity as a function of temperature is predicted for pristine ZrTe., Comment: 9 pages, 10 figures

Phonon transport of recently-fabricated $\mathrm{Na_2He}$ at high pressure is investigated from a combination of first-principles calculations and the linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA). The calculated room-temperature lattice thermal conductivity is 149.19 $\mathrm{W m^{-1} K^{-1}}$, which is very close to one of Si. It is found that low-frequency optical modes comprise 16\% of the lattice thermal conductivity, while high-frequency optical modes have negligible contribution. The high lattice thermal conductivity is due to large group velocities, small Gr$\mathrm{\ddot{u}}$neisen parameters, and long phonon lifetimes. The size effects on lattice thermal conductivity are considered by cumulative thermal conductivity with respect to phonon mean free path(MFP). To significantly reduce the lattice thermal conductivity, the characteristic length smaller than 100 nm is required, and can reach a decrease of 36\%. These results may be useful to understand thermal transport processes that occur inside giant planets., 4 pages, 6 figures

Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has been synthesized experimentally. In this work, the biaxial strain dependence of electronic structures and transport properties of Janus PtSSe monolayer is systematically investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). Calculated results show that SOC has a detrimental effect on power factor of PtSSe monolayer, which can be understood by considering SOC effects on energy bands near the Fermi level. With $a/a_0$ from 0.94 to 1.06, the energy band gap firstly increases, and then decreases, which is due to the position change of conduction band minimum (CBM). It is found that compressive strain can increase the strength of conduction bands convergence by changing relative position of conduction band extrema (CBE), which can enhance n-type $ZT_e$ values. Calculated results show that compressive strain can also induce the flat valence bands around the $\Gamma$ point near the Fermi level, which can lead to high Seebeck coefficient due to large effective masses, giving rise to better p-type $ZT_e$ values. The calculated elastic constants with $a/a_0$ from 0.94 to 1.06 all satisfy the mechanical stability criteria, which proves that the PtSSe monolayer is mechanically stable in the considered strain range. Our works further enrich studies of Janus TMD monolayers, and can motivate farther experimental works., Comment: 7 pages, 9 figures

It is believed that nanostructuring is an effective way to achieve excellent thermoelectric performance. In the work, by combining the first-principles calculations and semiclassical Boltzmann transport theory, we investigate the thermoelectric properties of bulk and monolayer BiTeBr including both the electron and phonon transports. The generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) is employed for the electron part, and GGA for the phonon part. It is found that SOC has important effects on electronic transport coefficients because of SOC-induced obvious influences on energy band structures. In p-type doping, monolayer has larger Seebeck coefficient than bulk in wide doping range, which is beneficial to excellent thermoelectric performance. The calculated average lattice thermal conductivity of bulk is 1.71 $\mathrm{W m^{-1} K^{-1}}$ at room temperature, which is close to experimental value 1.3 $\mathrm{W m^{-1} K^{-1}}$. Calculated results show that monolayer has better $ZT_e$ and lower lattice thermal conductivity than bulk, which suggests that monolayer has better thermoelectric performance than bulk. The lower lattice thermal conductivity in monolayer than bulk is due to shorter phonon lifetimes. By comparing the experimental electrical conductivity of bulk with calculated value, the scattering time is determined for 3.3 $\times$ $10^{-14}$ s. Based on electron and phonon transport coefficients, the thermoelectric figure of merit $ZT$ of bulk and monolayer are calculated. It is found that monolayer has higher peak $ZT$ than bulk, and the peak $ZT$ of monolayer can be as high as 0.55 in n-type doping and 0.75 in p-type doping at room temperature. These results imply that monolayer BiTeBr may be a potential two-dimensional (2D) thermoelectric material, which can stimulate further experimental works to synthesize monolayer BiTeBr., 8 pages,9 figures

Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, we systematically investigate the thermoelectric properties of orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and Se) by the first-principles calculations and semiclassical Boltzmann transport theory. The spin-orbit coupling (SOC) is included to investigate their electronic transport, which produces observable effects on power factor, especially for n-type doping. According to calculated $ZT$, the four monolayers exhibit diverse anisotropic thermoelectric properties, although they have similar hinge-like crystal structure. The GeS along zigzag and armchair directions shows the strongest anisotropy, while SnS and SnSe show mostly isotropic efficiency of thermoelectric conversion, which can be understood by the strength of anisotropy of their respective power factor, electronic and lattice thermal conductivities. Calculated results show that $ZT$ for different carriers of n- and p-type has little difference for GeS, SnS and SnSe. It is found that GeSe, SnS and SnSe show better thermoelectric performance compared to GeS in n-type doping, and SnS and SnSe exhibit higher efficiency of thermoelectric conversion in p-type doping. Compared to a lot of 2D materials, orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and Se) may possess better thermoelectric performance due to higher power factor and lower thermal conductivity. Our work would be beneficial to further experimental study., 7 pages, 5 figures

The novel electronic structures can induce unique physical properties in two-dimensional (2D) materials. In this work, we report isolated highly localized bands in $\mathrm{YbI_2}$ monolayer by the first-principle calculations within generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). It is found that $\mathrm{YbI_2}$ monolayer is an indirect-gap semiconductor using both GGA and GGA+SOC. The calculations reveal that Yb-$4f$ orbitals constitute isolated highly localized bands below the Fermi level at the absence of SOC, and the bands are split into the $j = 7/2$ and $j = 5/2$ states with SOC. The isolated highly localized bands can lead to very large Seebeck coefficient and very low electrical conductivity in p-type doping by producing very large effective mass of the carrier. It is proved that isolated highly localized bands have very strong stability again strain, which is very important for practical application. When the onsite Coulomb interaction is added to the Yb-$4f$ orbitals, isolated highly localized bands persist, and only their relative positions in the gap change. These findings open a new window to search for novel electronic structures in 2D materials., Comment: 5 pages, 7 figures

The electronic structures and thermoelectric properties of semiconducting transition-metal dichalcogenide monolayers $\mathrm{MX_2}$ (M=Zr, Hf, Mo, W and Pt; X=S, Se and Te) are investigated by combining first-principles and Boltzmann transport theory, including spin-orbital coupling (SOC). It is found that the gap decrease increases from S to Te in each cation group, when the SOC is opened. The spin-orbital splitting has the same trend with gap reducing. Calculated results show that SOC has noteworthy detrimental effect on p-type power factor, while has a negligible influence in n-type doping except W cation group, which can be understood by considering the effects of SOC on the valence and conduction bands. For $\mathrm{WX_2}$ (X=S, Se and Te), the SOC leads to observably enhanced power factor in n-type doping, which can be explained by SOC-induced band degeneracy, namely bands converge. Among all cation groups, Pt cation group shows the highest Seebeck coefficient, which leads to best power factor, if we assume scattering time is fixed. Calculated results show that $\mathrm{MS_2}$ (M=Zr, Hf, Mo, W and Pt) have best p-type power factor for all cation groups, and that $\mathrm{MSe_2}$ (M=Zr and Hf), $\mathrm{WS_2}$ and $\mathrm{MTe_2}$ (M=Mo and Pt) have more wonderful n-type power factor in respective cation group. Therefore, these results may be useful for further theoretical prediction or experimental search of excellent thermoelectric materials from semiconducting transition-metal dichalcogenide monolayers., Comment: 8 pages, 8 figures

Biaxial strain effects on electronic structures and thermoelectric properties of monolayer $\mathrm{PtTe_2}$ are investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for the phonon part. Calculated results show that small compressive strain (about -3\%) can induce semiconductor-to-metal transition, which can easily be achieved in experiment. The conduction bands convergence is observed for unstrained $\mathrm{PtTe_2}$, which can be removed by both compressive and tensile strains. Tensile strain can give rise to valence bands convergence by changing the position of valence band maximum (VBM), which can induce enhanced Seebeck coefficient, being favorable for high power factor. It is found that tensile strain can also reduce lattice thermal conductivity, which at the strain of 4\% can decrease by about 19\% compared to unstrained one at room temperature. By considering tensile strain effects on $ZT_e$ and lattice thermal conductivity, tensile strain indeed can improve p-type efficiency of thermoelectric conversion. Our results demonstrate the potential of strain engineering in $\mathrm{PtTe_2}$ for applications in electronics and thermoelectricity., Comment: 6 pages, 7 figures

Lots of two-dimensional (2D) materials have been predicted theoretically, and further confirmed in experiment, which have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. Here, the thermoelectric properties of ATeI (A=Sb and Bi) monolayers are systematically investigated, based on semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has important effects on electronic transport coefficients in p-type doping, but neglectful influences on n-type ones. The room-temperature sheet thermal conductance is 14.2 $\mathrm{W K^{-1}}$ for SbTeI and 12.6 $\mathrm{W K^{-1}}$ for BiTeI, which are lower than one of most well-known 2D materials, such as transition-metal dichalcogenide, group IV-VI, group-VA and group-IV monolayers. By analyzing group velocities and phonon lifetimes, the very low sheet thermal conductance of ATeI (A=Sb and Bi) monolayers is mainly due to small group velocities. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, being obviously different from usual picture with little contribution from optical branches. According to cumulative lattice thermal conductivity with respect to phonon mean free path (MFP), it is difficulty to further reduce lattice thermal conductivity by nanostructures. Finally, possible thermoelectric figure of merit $ZT$ of ATeI (A=Sb and Bi) monolayers are calculated. It is found that the p-type doping has more excellent thermoelectric properties than n-type doping, and at room temperature, the peak $ZT$ can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A=Sb and Bi) monolayers may be potential 2D thermoelectric materials, and can stimulate further experimental works to synthesize these monolayers., Comment: 8 pages, 11 figures. arXiv admin note: text overlap with arXiv:1701.08944

We use a density-functional-theory (DFT) approach with a modified Becke-Johnson exchange plus local density approximation (LDA) correlation potential (mBJLDA) [semi-local, orbital-independent, producing accurate semiconductor gaps. see F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 (2009)] to investigate the electronic structures of zincblende transition-metal (TM) pnictides and chalcogenides akin to semiconductors. Our results show that this potential does not yield visible changes in wide TM d-t_{2g} bands near the Fermi level, but makes the occupied minority-spin p-bands lower by 0.25~0.35 eV and the empty (or nearly empty) minority-spin e_g bands across the Fermi level higher by 0.33~0.73 eV. Consequently, mBJLDA, having no atom-dependent parameters, makes zincblende MnAs become a truly half-metallic (HM) ferromagnet with a HM gap (the key parameter) 0.318eV, being consistent with experiment. For zincblende MnSb, CrAs, CrSb, CrSe, or CrTe, the HM gap is enhanced by 19~56% compared to LDA and generalized gradient approximation results. The improved HM ferromagnetism can be understood in terms of the mBJLDA-enhanced spin exchange splitting., 6 pages, 5 figures

We use the state-of-the-arts density-functional-theory method to study various magnetic orders and their effects on the electronic structures of the FeSe. Our calculated results show that, for the spins of the single Fe layer, the striped antiferromagnetic orders with distortion are more favorable in total energy than the checkerboard antiferromagnetic orders with tetragonal symmetry, which is consistent with known experimental data, and the inter-layer magnetic interaction is very weak. We investigate the electronic structures and magnetic property of the distorted phases. We also present our calculated spin coupling constants and discuss the reduction of the Fe magnetic moment by quantum many-body effects. These results are useful to understand the structural, magnetic, and electronic properties of FeSe, and may have some helpful implications to other FeAs-based materials.