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Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined monolayers of 1T-TaS$_2$. Specifically, an ordered incommensurate charge density wave (oIC-CDW) is realized in 2D with dramatically enhanced amplitude and resistivity. By enhancing CDW order, the hexatic nature of charge density waves becomes observable. Upon heating via in-situ TEM, the CDW continuously melts in a reversible hexatic process wherein topological defects form in the charge density wave. From these results, new regimes of the CDW phase diagram for 1T-TaS$_2$ are derived and consistent with the predicted emergence of vestigial quantum order.

The rare-earth nickelates possess a diverse set of collective phenomena including metal-to-insulator transitions, magnetic phase transitions, and, upon chemical reduction, superconductivity. Here, we demonstrate epitaxial stabilization of layered nickelates in the Ruddlesden-Popper form, Nd$_{n+1}$Ni$_n$O$_{3n+1}$, using molecular beam epitaxy. By optimizing the stoichiometry of the parent perovskite NdNiO$_3$, we can reproducibly synthesize the $n = 1 - 5$ member compounds. X-ray absorption spectroscopy at the O $K$ and Ni $L$ edges indicate systematic changes in both the nickel-oxygen hybridization level and nominal nickel filling from 3$d^8$ to 3$d^7$ as we move across the series from $n = 1$ to $n = \infty$. The $n = 3 - 5$ compounds exhibit weakly hysteretic metal-to-insulator transitions with transition temperatures that depress with increasing order toward NdNiO$_3$ ($n = \infty)$., 11 pages, 4 figures with Supplemental Information

The occurrence of superconductivity in proximity to various strongly correlated phases of matter has drawn extensive focus on their normal state properties, to develop an understanding of the state from which superconductivity emerges. The recent finding of superconductivity in layered nickelates raises similar interests. However, transport measurements of doped infinite-layer nickelate thin films have been hampered by materials limitations of these metastable compounds - in particular, a relatively high density of extended defects. Here, by moving to a substrate (LaAlO$_{3}$)$_{0.3}$(Sr$_{2}$TaAlO$_{6}$)$_{0.7}$ which better stabilizes the growth and reduction conditions, we can synthesize the doping series of Nd$_{1-x}$Sr$_{x}$NiO$_{2}$ essentially free from extended defects. This enables the first examination of the 'intrinsic' temperature and doping dependent evolution of the transport properties. The normal state resistivity exhibits a low-temperature upturn in the underdoped regime, linear behavior near optimal doping, and quadratic temperature dependence for overdoping. This is strikingly similar to the copper oxides, despite key distinctions - namely the absence of an insulating parent compound, multiband electronic structure, and a Mott-Hubbard orbital alignment rather than the charge-transfer insulator of the copper oxides. These results suggest an underlying universality in the emergent electronic properties of both superconducting families.

This article introduces a training simulator for electron beam alignment using Ronchigrams. The interactive web application, www.ronchigram.com, is an advanced educational tool aimed at making scanning transmission electron microscopy (STEM) more accessible and open. For experienced microscopists, the tool offers on-hand quantification of simulated Ronchigrams and their resolution limits., Comment: 6 pages, 3 figures

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe$_2$, which is isostructural and isoelectronic to MoTe$_2$, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe$_2$ devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials., Comment: 6 figures, 2 tables

Exploiting the emerging nanoscale periodicities in epitaxial, single-crystal thin films is an exciting direction in quantum materials science: confinement and periodic distortions induce novel properties. The structural motifs of interest are ferroelastic, ferroelectric, multiferroic, and, more recently, topologically protected magnetization and polarization textures. A critical step towards heterostructure engineering is understanding their nanoscale structure, best achieved through real-space imaging. X-ray Bragg coherent diffractive imaging visualizes sub-picometer crystalline displacements with tens of nanometers spatial resolution. Yet, it is limited to objects spatially confined in all three dimensions and requires highly coherent, laser-like x-rays. Here we lift the confinement restriction by developing real-space imaging of periodic lattice distortions: we combine an iterative phase retrieval algorithm with unsupervised machine learning to invert the diffuse scattering in conventional x-ray reciprocal-space mapping into real-space images of polar and elastic textures in thin epitaxial films. We first demonstrate our imaging in PbTiO3/SrTiO3 superlattices to be consistent with published phase-field model calculations. We then visualize strain-induced ferroelastic domains emerging during the metal-insulator transition in Ca2RuO4 thin films. Instead of homogeneously transforming into a low-temperature structure (like in bulk), the strained Mott insulator splits into nanodomains with alternating lattice constants, as confirmed by cryogenic scanning transmission electron microscopy. Our study reveals the type, size, orientation, and crystal displacement field of the nano-textures. The non-destructive imaging of textures promises to improve models for their dynamics and enable advances in quantum materials and microelectronics.

Nickel-based superconductors provide a long-awaited experimental platform to explore possible cuprate-like superconductivity. Despite similar crystal structure and $d$ electron filling, these systems exhibit several differences. Nickelates are the most polar layered oxide superconductor, raising questions about the interface between substrate and thin film -- thus far the only sample geometry to successfully stabilize superconductivity. We conduct a detailed experimental and theoretical study of the prototypical interface between Nd$_{1-x}$Sr$_x$NiO$_2$ and SrTiO$_3$. Atomic-resolution electron energy loss spectroscopy in the scanning transmission electron microscope reveals the formation of a single intermediate Nd(Ti,Ni)O$_3$ layer. Density functional theory calculations with a Hubbard $U$ term show how the observed structure alleviates the strong polar discontinuity. We explore effects of oxygen occupancy, hole doping, and cation structure to disentangle the contributions of each for reducing interface charge density. Resolving the nontrivial interface structure will be instructive for future synthesis of nickelate films on other substrates and in vertical heterostructures.

We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs., Comment: 12 pages, 8 figures

Transition-metal dichalcogenides containing tellurium anions show remarkable charge-lattice modulated structures and prominent interlayer character. Using cryogenic scanning transmission electron microscopy (STEM), we map the atomic-scale structures of the high temperature (HT) and low temperature (LT) modulated phases in 1T'-TaTe$_{2}$. At HT, we directly show in-plane metal distortions which form trimerized clusters and staggered, three-layer stacking. In the LT phase at 93 K, we visualize an additional trimerization of Ta sites and subtle distortions of Te sites by extracting structural information from contrast modulations in plan-view STEM data. Coupled with density functional theory calculations and image simulations, this approach opens the door for atomic-scale visualizations of low temperature phase transitions and complex displacements in a variety of layered systems.

Spectroscopic mapping by scanning transmission electron microscopy coupled with electron energy loss spectroscopy (STEM-EELS) is a powerful technique for determining the structure and chemistry of a wide range of materials and interfaces. The extension of this technique to cryogenic temperatures opens the door to new experiments across many fields including materials physics, energy storage and conversion, and biology. Such experiments, however, often face signal limitations due to sample sensitivity or the need for rapid data acquisition under less stable cryogenic conditions. Compared to traditional indirect detection systems such as charge coupled devices (CCDs), direct electron detectors (DEDs) offer improved detective quantum efficiencies, narrower point spread functions, and superior signal-to-noise ratios. Here, we compare the performance of a Gatan K2 Summit DED to an UltraScan 1000 CCD for use in signal-limited atomic-resolution STEM-EELS experiments. Due to its improved point spread function, the DED's energy resolution remains comparable to that of the CCD at a 5 times lower dispersion, providing simultaneous access to a much broader total energy range without sacrificing spectral resolution. More importantly, the benefits of direct detection enable a variety of low-signal experiments, including atomic-resolution mapping of minor and high energy edges such as the La-M$_{2,3}$ edge at 1123 eV and the Bi-M$_{4,5}$ edge at 2580 eV. For rapid acquisitions at 400 spectra per second, elemental maps recorded with the DED show an up to 40 percent increase in atomic lattice fringe contrast compared to those acquired with the CCD. Taking advantage of these performance improvements and the fast readout of the K2 DED, we use direct detection STEM-EELS to demonstrate atomic-resolution elemental mapping at cryogenic temperatures., 6 figures

We report the phase diagram of Nd$_{1-x}$Sr$_x$NiO$_2$ infinite layer thin films grown on SrTiO$_3$. A superconducting dome spanning $0.125 < x < 0.25$ is found, remarkably similar to cuprates, albeit over a narrower doping window. However, while cuprate superconductivity is bounded by an insulator for underdoping and a metal for overdoping, here we observe weakly insulating behavior on either side of the dome. Furthermore, the normal state Hall coefficient is always small and proximate to a continuous zero crossing in doping and in temperature, in contrast to the $\sim 1/x$ dependence observed for cuprates. This suggests the presence of both electron- and hole-like bands, consistent with band structure calculations., 18 pages (including Supplemental Material), 7 figures (including 4 supplemental figure)

Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $��$-MoTe$_2$, which unlike WTe$_2$ retains bulk inversion symmetry. We measure spin-orbit torques on $��$-MoTe$_2$/Permalloy heterostructures using spin-torque ferromagnetic resonance as a function of crystallographic alignment and MoTe$_2$ thickness down to the monolayer limit. We observe an out-of-plane antidamping torque with a spin torque conductivity as strong as 1/3 of that of WTe$_2$, demonstrating that the breaking of bulk inversion symmetry in the spin-generation material is not a necessary requirement for producing an out-of-plane antidamping torque. We also measure an unexpected dependence on the thickness of the $��$-MoTe$_2$ -- the out-of-plane antidamping torque is present in MoTe$_2$/Permalloy heterostructures when the $��$-MoTe$_2$ is a monolayer or trilayer thick, but goes to zero for devices with bilayer $��$-MoTe$_2$.

Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of antiferroelectric materials have been identified to date. Here, we propose a new design strategy for the construction of lead-free antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. We show that by confining atomically-precise thin layers of BiFeO3 in a dielectric matrix that we can induce a metastable antiferroelectric structure. Application of an electric field reversibly switches between this new phase and a ferroelectric state, in addition, tuning of the dielectric layer causes coexistence of the ferroelectric and antiferroelectric states. Precise engineering of the structure generates an antiferroelectric phase with energy storage comparable to that of the best lead-based materials. The use of electrostatic confinement provides a new pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses., 17 pages, 4 figures

Incommensurate charge order in hole-doped oxides is intertwined with exotic phenomena such as colossal magnetoresistance, high-temperature superconductivity, and electronic nematicity. Here, we map at atomic resolution the nature of incommensurate order in a manganite using scanning transmission electron microscopy at room temperature and cryogenic temperature ($\sim$ 93K). In diffraction, the ordering wavevector changes upon cooling, a behavior typically associated with incommensurate order. However, using real space measurements, we discover that the underlying ordered state is lattice-commensurate at both temperatures. The cations undergo picometer-scale ($\sim $6-11 pm) transverse displacements, which suggests that charge-lattice coupling is strong and hence favors lattice-locked modulations. We further unearth phase inhomogeneity in the periodic lattice displacements at room temperature, and emergent phase coherence at 93K. Such local phase variations not only govern the long range correlations of the charge-ordered state, but also results in apparent shifts in the ordering wavevector. These atomically-resolved observations underscore the importance of lattice coupling and provide a microscopic explanation for putative "incommensurate" order in hole-doped oxides.

Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work we use an amorphous WO3 overlayer to control the defect formation and obtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of 5.6 me. The amorphous character of the WO3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry.

Combining multiple fast image acquisitions to mitigate scan noise and drift artifacts has proven essential for picometer precision, quantitative analysis of atomic resolution scanning transmission electron microscopy (STEM) data. For very low signal-to-noise ratio (SNR) image stacks - frequently required for undistorted imaging at liquid nitrogen temperatures - image registration is particularly delicate, and standard approaches may either fail, or produce subtly specious reconstructed lattice images. We present an approach which effectively registers and averages image stacks which are challenging due to their low-SNR and propensity for unit cell misalignments. Registering all possible image pairs in a multi-image stack leads to significant information surplus. In combination with a simple physical picture of stage drift, this enables identification of incorrect image registrations, and determination of the optimal image shifts from the complete set of relative shifts. We demonstrate the effectiveness of our approach on experimental, cryogenic STEM datasets, highlighting subtle artifacts endemic to low-SNR lattice images and how they can be avoided. High-SNR average images with information transfer out to 0.72 A are achieved at 300 kV and with the sample cooled to near liquid nitrogen temperature., Comment: 25 pages, 5 figures