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Theia would be a novel, "hybrid" optical neutrino detector, with a rich physics program. This paper is intended to provide a brief overview of the concepts and physics reach of Theia. Full details can be found in the Theia white paper [1]., Comment: Contribution to Snowmass 2021

The High Energy Physics community can benefit from a natural synergy in research activities into next-generation large-scale water and scintillator neutrino detectors, now being studied for remote reactor monitoring, discovery and exclusion applications in cooperative nonproliferation contexts. Since approximately 2010, US nonproliferation researchers, supported by the National Nuclear Security Administration (NNSA), have been studying a range of possible applications of relatively large (100 ton) to very large (hundreds of kiloton) water and scintillator neutrino detectors. In parallel, the fundamental physics community has been developing detectors at similar scales and with similar design features for a range of high-priority physics topics, primarily in fundamental neutrino physics. These topics include neutrino oscillation studies at beams and reactors, solar, and geological neutrino measurements, supernova studies, and others. Examples of ongoing synergistic work at U.S. national laboratories and universities include prototype gadolinium-doped water and water-based and opaque scintillator test-beds and demonstrators, extensive testing and industry partnerships related to large area fast position-sensitive photomultiplier tubes, and the development of concepts for a possible underground kiloton-scale water-based detector for reactor monitoring and technology demonstrations. Some opportunities for engagement between the two communities include bi-annual Applied Antineutrino Physics conferences, collaboration with U.S. National Laboratories engaging in this research, and occasional NNSA funding opportunities supporting a blend of nonproliferation and basic science R&D, directed at the U.S. academic community., contribution to Snowmass 2021

The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry.

A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics.

Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite Er(Ti,Mn)O3 and study their impact on the local electric transport behaviour. The use of an electric field to induce partial dislocations is a conceptually new approach to the burgeoning field of emergent defect-driven phenomena and enables local property control without the need of external macroscopic strain fields. This control is an important step towards integrating and functionalising dislocations in practical devices for future oxide electronics., 20 pages, 7 figures

The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are presented. The undoped GaAs demonstrated a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Si is characterized by three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), 1335 nm (0.93 eV) and a light output of about 71 ph/keV. In the case of GaAs:(Si, B), four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV), 1070 nm (1.16 eV) and 1335 nm (0.93 eV) were observed. A high light yield higher than 125 ph/keV was estimated for the co-doped sample. The applications of low energy gap semiconductors as cryogenic scintillators for particle detection are discussed. The GaAs is a promising crystal for a cryogenic scintillator for the dark matter (DM) detection.

Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO3 is donor doped with Ti4+. Density functional theory calculations show that Ti4+ goes to the B site, replacing Mn3+. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macroscopic and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality. © 2018 American Physical Society

The spontaneous transformations associated with symmetry-breaking phase transitions generate domain structures and defects that may be topological in nature. The formation of these defects can be described according to the Kibble-Zurek mechanism, which provides a generic relation that applies from cosmological to interatomic length scales. Its verification is challenging, however, in particular at the cosmological scale where experiments are impractical. While it has been demonstrated for selected condensed-matter systems, major questions remain regarding, e.g., its degree of universality. Here, we develop a global Kibble-Zurek picture from the condensed-matter level. We show theoretically that a transition between two fluctuation regimes (Ginzburg and mean field) can lead to an intermediate region with reversed scaling, and we verify experimentally this behavior for the structural transition in the series of multiferroic hexagonal manganites. Trends across the series allow us to identify additional intrinsic features of the defect formation beyond the original Kibble-Zurek paradigm., Physical Review X, 7 (4), ISSN:2160-3308

Historically, the discovery and optimization of doped bulk materials has been predominantly developed through an Edisonian approach. While successful and despite the constant progress in fundamental understanding of detector materials physics, the process has been restricted by its inherent slow pace and low success rate. This poor throughput owes largely to the considerable compositional space that needs to be accounted for to fully comprehend complex material/performance relationship. Here, we present a combinatorial approach where doped bulk scintillator materials can be rapidly optimized for their properties through concurrent extrinsic doping/co-doping strategies. The concept that makes use of Design of Experiment, rapid growth and evaluation techniques, and multivariable regression analysis, has been successfully applied to the engineering of NaI performance, a historical but mediocre performer in scintillation detection. Using this approach, we identified a three-element doping/co-doping strategy that significantly improves the material performance. The composition was uncovered by simultaneously screening for a beneficial co-dopant ion among the alkaline earth metal family and by optimizing its concentration and that of Tl+ and Eu2+ ions. The composition with the best performance was identified as 0.1% mol Tl+, 0.1% mol Eu2+ and 0.2% mol Ca2+. This formulation shows enhancement of energy resolution and light output at 662 keV, from 6.3 to 4.9%, and from 44,000 to 52,000 ph/MeV, respectively. The method, in addition to improving NaI performance, provides a versatile framework for rapidly unveiling complex and concealed correlations between material composition and performance, and should be broadly applicable to optimization of other material properties., 7 pages, 3 figures