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Microcompression tests were performed on the Al/Nb multilayers of incoherent interfaces with the layer thicknesses of 5 nm Al/5 nm Nb and 50 nm Al/50 nm Nb. The Al-Nb multilayers showed increase in strength as the layer thickness was reduced; the average flow stresses at 5% plastic strain from the 5 nm Al/5 nm Nb and 50 nm Al/50 nm Nb layer thickness specimens were determined to be 2.1 GPa and 1.4 GPa respectively. The results from this Al-Nb microcompression study were compared with those of the previous report on Cu-Nb multilayer microcompression results that indicated that the flow stresses of the Al-Nb multilayer are lower than those of Cu-Nb with the same bilayer spacing. The observed difference in strength was attributed to a potential difference in the interfacial strength of the two incoherent multilayer systems. [ABSTRACT FROM PUBLISHER]

PVDF and P(VDF-TrFE) nano- and micro- structures have been widely used due to their potential applications in several fields, including sensors, actuators, vital sign transducers, and energy harvesters. In this study, we developed vertically aligned P(VDF-TrFE) core-shell structures using high modulus polyurethane acrylate (PUA) pillars as the support structure to maintain the structural integrity. In addition, we were able to improve the piezoelectric effect by 1.85 times from 40 ± 2 to 74 ± 2 pm/V when compared to the thin film counterpart, which contributes to the more efficient current generation under a given stress, by making an effective use of the P(VDF-TrFE) thin top layer as well as the side walls. We attribute the enhancement of piezoelectric effects to the contributions from the shell component and the strain confinement effect, which was supported by our modeling results. We envision that these organic-based P(VDF-TrFE) core-shell structures will be used widely as 3D sensors and power generators because they are optimized for current generations by utilizing all surface areas, including the side walls of core-shell structures. [ABSTRACT FROM AUTHOR]

In-situ transmission electron microscopy (TEM) annealing of submicron Al pillars (∼300–450 nm in diameter) fabricated by focused ion beam (FIB) shows that the dislocation loops formed by the high energy Ga + ion beam impact near the material surface can be removed by annealing at around half of the melting point ( T m ). Quantitative analysis of real-time TEM data reveals that the dislocation loops first show a ripening behavior at around 0.4 T m , i.e. larger loops coarsen at the expense of smaller ones. Subsequently, the ripened loops start to shrink and are eventually annihilated at ∼0.5 T m by the diffusion of thermally activated vacancies. Microcompression tests on the as-fabricated and annealed pillars suggest that the FIB-induced defects, particularly dislocation loops, distinctively affect the deformation behavior of submicron Al pillars; while the yield and flow stresses appear unaffected by the annealing, strain bursts are larger and more frequent in the annealed pillars compared to those of as-fabricated samples. In-situ TEM compression revealed that the initial plastic deformation and subsequent plastic flow of Al pillars are significantly altered by the presence of FIB-induced dislocation loops, as they actively respond to the applied stress. We observe that the initial dislocation activity in most FIB-prepared pillars was the glide of FIB-induced dislocation loops. With further straining, the dislocation loops escaped the pillar, leaving slip steps at the pillar surface and/or dislocation debris within the pillar volume via the interaction with other mobile dislocations. The subsequent dislocation slip is mostly localized at these locations, thereby forming large slip steps. Contrarily, in the case of annealed pillars, the deformation was rather homogeneous with the formation of multiple fine slip steps. The present direct TEM observations contribute to the understanding of the nature of FIB-induced defects and reveal their distinct roles in the deformation behaviors of submicron pillars. [ABSTRACT FROM AUTHOR]

Microstructural evolution of focused ion beam machined Mg nanopillars was investigated by in situ heating experiments in a transmission electron microscope. The dislocation loops generated by a Ga+ ion beam were annihilated at around half of the melting point of Mg. At a higher temperature (673K), the sublimation of Mg occurred due to the reduced stability of Mg under the vacuum environment. In the course of sublimation, the Ga-rich liquid was formed and stabilized the structural instability of moving solid–vapor interface. [ABSTRACT FROM AUTHOR]