Search

The aggressive reduction of the channel length in transistors needs the high doping of the channel region, while the contact area requires doping beyond 1020 cm-3 to ensure low-resistance ohmic contacts. Similar problems apply to wide-band gap semiconductors where the p-type doping is challenging, mainly due to the high activation energy for acceptors, low equilibrium solid solubility and deactivation of acceptors by the formation of acceptor-vacancy clusters. Recently, we have shown that ultra-doped n-type and p-type Ge with a carrier concentration above 1020 cm-3 can be achieved by applying non-equilibrium methods like ion implantation followed by millisecond-range flash-lamp annealing (FLA) [1-3]. The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ≤ 4) that deactivates the donors [4]. Based on data density functional theory calculations, at temperature higher than 850 K, the concentration of D4V clusters progressively decreases liberating unbounded vacancies and donor atoms. The same effect is observed for p-type Ge and in III-V semiconductors. Here, we report on experiments and theoretical calculations solving the basic problem of donors and acceptors deactivation in heavily doped semiconductors. The dissolution of donor/acceptor-vacancy clusters in heavily doped semiconductors is achieved by ms-range FLA with a peak temperature close to the melting point of the semiconductor. Positron annihilation lifetime spectroscopy (PALS) reveals that dopant-vacancy clusters are the main defect centers deactivating both acceptors and donors. Millisecond-range high-temperature treatment dissociates the dopant-V clusters and, as shown by SIMS, fully suppresses the dopant diffusion in both group IV semiconductors and III-V compound semiconductors. For the first time, using structural characterization (PALS, SIMS) and electrochemical capacitance-voltage profiling combined with DFT calculations, we were able to address, understand, and solve the fundamental problem hindering the doping of semiconductors above the solid solubility limit.

Flash lamp annealing is, like laser annealing, a non-equilibrium annealing method on the sub-second time scale which excellently meets the requirements of thin film processing: it allows the use of temperature-sensible substrates for thin films, leads to energy and cost savings compared to long-time annealing methods, and enables the formation of new materials in thermal non-equilibrium. Originally developed for microelectronics, flash lamp annealing has opened up new areas of application like thin films on glass, sensors, printed electronics, flexible electronics, batteries etc. In this presentation, we shortly compare the pros and cons of flash lamp and laser annealing for thin film processing and discuss these issues at the example of thin semiconductor films on glass. In detail, the crystallization of amorphous Si on borosilicate glass, the crystallization of amorphous Ge on SiO2/Si substrates, and the formation of NiGe on different Ge substrates (amorphous, polycrystalline and monocrystalline) have been investigated. In all cases, the thin films were deposited by magnetron sputtering, followed by flash lamp annealing. The evolution of microstructure and its electrical properties was traced by corresponding characterization methods such as Raman spectroscopy, transmission electron microscopy, atomic force microscopy, X-ray diffraction, sheet resistance and Hall effect measurements.

B20-type transition-metal silicides or germanides are noncentrosymmetric materials hosting magnetic skyrmions, which are promising information carriers in spintronic devices. The prerequisite is the preparation of thin films on technology-relevant substrates with magnetic skyrmions stabilized at a broad temperature and magnetic-field working window. The canonical example is the B20-MnSi film grown on Si substrates. However, the as-yet unavoidable contamination with MnSi1.7 occurs due to the lower nucleation temperature of this phase. In this work, we report a simple and efficient method to overcome this problem and prepare single-phase MnSi films on Si substrates. It is based on the millisecond reaction between metallic Mn and Si using flash lamp annealing (FLA). By controlling the FLA energy density, we can grow single-phase MnSi or MnSi1.7 or their mixture at will. Compared with bulk MnSi the prepared MnSi films show an increased Curie temperature of up to 41 K. In particular, the magnetic skyrmions are stable over a much wider temperature and magnetic-field range than reported previously. Our results constitute a novel phase selection approach for alloys and can help enhance specific functional properties such as enhancing the stability of magnetic skyrmions.

Silicides have been widely used for CMOS devices in order to provide a stable Ohmic contact with a low contact resistivity. With the integration of Ge on Si the focus also shifted to germanides as a low resistivity contact material. In addition, ferromagnetic germanides may serve as spin injector materials for Ge-based spintronic devices. Usually, germanides have been fabricated by furnace or rapid thermal annealing in literature. In this contribution we investigate the formation process of Ni germanides using a combination of magnetron sputtering and flash lamp annealing (FLA). Three different types of Ge served as a substrate for the deposition of the transition metal: amorphous Ge made by magnetron-sputtering on a SiO2-Si substrate, polycrystalline Ge made by magnetron-sputtering followed by FLA, and monocrystalline Ge in the form of a (100) Ge wafer. After metal deposition samples are in-situ annealed by FLA without breaking the vacuum, which triggers the formation of germanides and prevents a possible, but unwanted oxidation. In order to investigate the crystallization behavior, the structures have been characterized by Raman spectroscopy, X-ray diffraction, ellipsometry, current-voltage and Hall effect measurements.

The n-type doping of Ge and Ge-based alloys is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ≤ 4) that deactivate the donors. This work clearly demonstrates that the dissolution of the DnV clusters in a heavily n-doped Ge, GeSn and SiGeSn layers can be achieved by millisecond-flash lamp annealing. This DnV cluster dissolution results in a considerable increase of the electrical activation together with a suppression of donor diffusion. Using electrical measurements and positron annihilation lifetime spectroscopy, combined with theoretical calculations, it is possible to address, understand and solve the fundamental problem of achieving ultra-high doping level in Ge, that has hindered so far the full integration of Ge and Ge-based alloys with complementary-metal-oxide-semiconductor technology.

The intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] This phenomenon is referred to as hyperdoping. As intermediate-band material, bulk Si hyperdoped with chalcogens or transition metals holds promises for Si-based short-wavelength infrared photodetectors and solar cells.[3,4] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells.[5,6] Here, we show a CMOS-compatible method based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude above the equilibrium solid solubility. The approach relies on using ion implantation followed by flash lamp annealing for hyperdoping Si/SiO2 core/shell nanowires. We induce, by millisecond-flash lamp annealing, a bottom-up template-assisted solid-phase epitaxy recrystallization of the nanowires. This results in the formation of intermediate-band Se-hyperdoped nanowires which exhibit room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device. References [1] Sher M J, Mazur E, Appl. Phys. Lett. 2014;105:032103. [2] Ertekin E, Winkler M, T, Recht D, Said A J, Aziz M J, Buonassisi T, Grossman J C, Phys. Rev. Lett. 2012;108:026401. [3] Berencén Y, Prucnal S, Liu F, Skorupa I, Hübner R, Rebohle L, Zhou S, Schneider H, Helm M, Skorupa W, Sci. Rep. 2017;7:43688. [4] Mailoa J P, Akey A J, Simmons C B, Hutchinson D, Mathews J, Sullivan J T, Recht D, Winkler M T, Williams J S, Warrender J M, Persans P D, Aziz M J, Buonassisi T, Nat. Commun. 2014;5:3011. [5] Beard M C, Luther J M, Nozik A J, Nat. Nanotech. 2014;9:951. [6] Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J, Lieber C M, Nature 2007:449;885.

In the present work, we report on epitaxial growth of ferromagnetic Mn5Ge3 thin films on (001) Ge substrates induced by Mn in-diffusion during non-equilibrium flash lamp annealing for 20 ms. The ferromagnetic Mn5Ge3/Ge samples with very sharp interface between the Mn5Ge3 layer and the Ge substrate can be used to fabricate spintronic devices. Temperature-dependent magnetization reveals a Curie temperature of 282 K which can be tuned much above room temperature by strain engineering and/or co-doping with C. The microstructural properties of the fabricated films were investigated by X-ray diffraction, cross-sectional TEM and Rutherford backscattering spectrometry. Both used material and technology are highly compatible with complementary metal-oxide-semiconductor (CMOS) technology and can be used for spintronics.

Hyperdoping consists of the intentional introduction of deep‐level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and the conduction bands. Recently, bulk Si hyperdoped with chalcogens or transition metals is demonstrated to be an appropriate intermediate‐band material for Si‐based short‐wavelength infrared photodetectors. Intermediate‐band nanowires can potentially be used instead of bulk materials to overcome the Shockley–Queisser limit and to improve efficiency in solar cells, but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, this paper shows a complementary metal‐oxide‐semiconductor (CMOS)‐compatible technique based on nonequilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom‐up template‐assisted solid phase recrystallization of the nanowires with the use of millisecond‐flash lamp annealing, Se‐hyperdoped Si/SiO2 core/shell nanowires are formed that have a room‐temperature sub‐bandgap optoelectronic photoresponse when configured as a photoconductor device.

Ge was deposited on silicon as a superlattice with 10 layers of Ge embedded in Si3N4 or ZrO2 matrices via plasma enhanced chemical vapor deposition or RF-sputtering, respectively. Raman spectroscopy, transmission electron microscopy and capacitance-voltage (CV) measurements were performed in order to investigate the structural and electrical properties of the superlattices. It will be shown that, in contrast to furnace annealing, flash lamp annealing of Ge-ZrO2-superlattices leads to crystalline Ge nanoparticles in an amorphous matrix. As revealed by CV measurements, these layers show excellent charge storage capabilities. In comparison, a higher thermal budget is needed to crystallize Ge in case of Si3N4-based superlattices, and no significant charge trapping could be detected during CV measurements.

Semiconducting nanowires (NWs) hold promises for functional nanoscale devices [1]. Although several applications have been demonstrated in the areas of electronics, photonics and sensing, the doping of NWs remains challenging. Ion implantation is a standard doping method in top-down semiconductor industry, which offers precise control over the areal dose and depth profile as well as allows for the doping of all elements of the periodic table even beyond their equilibrium solid solubility [2]. Yet its major disadvantage is the concurrent material damage. A subsequent annealing process is commonly used for the healing of implant damage and the electrical activation of dopants. This step, however, might lead to the out-diffusion of dopants and eventually the degradation of NWs because of the low thermal stability caused by the large surface–area-to-volume ratio. In this work, we report on non-equilibrium processing for controlled doping of drop-casted Si/SiO2 core/shell NWs with shallow- and deep-level dopants below and above their equilibrium solid solubility. The approach lies on the implantation of either shallow-level dopants, such as B and P, or deep-level dopants like Se followed by millisecond flash lamp annealing. In case of amorphization upon high-fluence implantation, recrystallization takes place via a bottom-up template-assisted solid phase epitaxy. Non-equilibrium Se concentrations lead to intermediate-band Si/SiO2 core/shell NWs that have room-temperature sub-band gap photoresponse when configured as a photoconductor device [3]. Alternatively, the formation of a cross-sectional p-n junction is demonstrated by co-implanting P and B in individual NWs at different depth along the NW core. [1] Peidong Yang, Ruoxue Yan, and Melissa Fardy, Nano Lett. 2010, 10, 1529–1536 [2] Michiro Sugitani, Rev. Sci. Instrum. 2014, 85, 02C315 [3] Y. Berencén, et al. Adv. Mater. Interfaces 2018, 5, 1800101

The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this work we investigate the possibilities to form InAs nanocrystals in a thin Si layer at laterally defined positions with the help of masked ion beam implantation and flash lamp annealing. In detail, after thinning of the device layer of a SOI wafer a cladding layer was deposited and patterned by electron beam lithography in order to serve as an implantation mask. The wafer was subsequently implanted with As and In, followed by flash lamp annealing leading to the formation of InAs nanocrystals in the implanted areas. The structures were investigated by Raman spectroscopy, scanning and transmission electron microscopy as well as energy-dispersive X-ray spectroscopy. Depending on the size of the implantation window, several, one or no nanocrystal is formed. Finally, the perspectives for using this technique for the local modification of Si nanowires are discussed.

Semiconductor structures with dimensions in the nanometer range become more and more important in microelectronics and other new emerging technologies. Thereby, the transition from bulk to nanomaterials often requires significant changes in the process technology, including the change from equilibrium to non-equilibrium processes. In this work, we investigate the modification of nanomaterials by flash lamp annealing with pulse lengths in the millisecond range [1]. In detail, we focus on two specific materials: (i) the annealing of thin ZnO layers and the impact of different process conditions on the materials properties, and (ii) the high-level doping of Si and Ge nanowires for sensor applications by ion implantation and flash lamp annealing.

The hyperdoping of semiconductors consists of introducing dopant concentrations far above the equilibrium solubility limits. This results in a broadening of dopant energy levels into an impurity or intermediate band. We have recently demonstrated that hyperdoping bulk Si with Se shows promise for Si-based short-wavelength infrared photodetectors [1]. Lately, silicon nanowires (NWs) have gained increasing importance as building blocks for nanodevices like field-effect transistors, light emitting devices and photovoltaic cells [2, 3]. Therefore, the comparison between hyperdoping Si nanowires and bulk Si is a common issue to be examined, which comes along with the transition from a bulk material to semiconductor NWs. In this work, we report on non-equilibrium processing for controlled hyperdoping of Si/SiO2 core/shell nanowires previously synthesized by the vapor-liquid-solid method. Our approach is based on Se implantation of the upper half of NWs followed by millisecond flash lamp annealing, which allows for a bottom-up template-assisted recrystallization of the amorphized parts of the NWs via explosive solid-phase epitaxy. The Se-hyperdoped Si NWs are successfully recrystallized and accommodate Se concentrations as high as 1021 cm-3. As a proof of device concept, a single Se-hyperdoped NW-based IR photoconductor is shown. In this way, the combination of ion implantation and flash lamp annealing as a promising nanoscale hyperdoping technology is successfully established. [1] Y. Berencén, S. Prucnal, Fang Liu, I. Skorupa, R. Hübner, L. Rebohle, S. Zhou, H. Schneider, M. Helm, and W. Skorupa, “Room-temperature short-wavelength infrared Si photodetector,” Sci. Rep. 7, 43688 (2017). [2] B. Tian, T. Cohen-Karni, Q. Qing, X. Duan, P. Xie and C.M. Lieber, “Three-dimensional, flexible nanoscale field-effect transistors as localized bioprobes,” Science 329, 831 (2010). [3] T. J. Kempa, B. Tian, D.R. Kim, J. Hu, X. Zheng and C.M. Lieber, “Single and tandem axial p-i-n nanowire photovoltaic devices,” Nano Lett. 8, 3456 (2008).

The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate InxGa1-xAs nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and X-ray diffraction analyses verify the formation of ternary III-V nanocrystals within the Si layer. Transmission electron microscopy reveals single-crystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III-V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated InxGa1-xAs nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio.

GeSn with quasi-direct band gap is one of the most promising semiconductor materials for light emitters integrated with CMOS technology. The equilibrium solid solubility limit (SSL) of Sn in Ge is in the range of 0.5 % and the predicted theoretical Sn concentration needed for the direct band gap formation is above 5 %. This means that GeSn with direct band gap is metastable and any related material process cannot be thermal equilibrium. Here we propose to utilize strongly non-equilibrium processing i.e. ion implantation followed by millisecond range flash lamp annealing (FLA), for doping and the formation of Ohmic contacts with low contact resistance on Ge0.95Sn0.05. The effective carrier concentration in P+ implanted Ge0.95Sn0.05 layer followed by FLA for 3 ms is above 5×10^19cm-3 with a specific contact resistance rc=4×10^-6Ωcm2. NiGe for Ohmic contact is made by Ni diffusion into GeSn during a single 3 ms long flash pulse. TEM images reveal that NiGe is polycrystalline but with an atomically sharp interface between the metal contact and GeSn. The influence of non-equilibrium processing (ion implantation and FLA) on the optical, electrical and microstructural properties of the GeSn layer grown by MBE on Si will be discussed in details.

This presentation gives a short overview of our recent investigations devoted to the formation of III-V nanocrystals in bulk Si, in SOI substrates and at laterally defined positions. The group III and group V elements are incorporated by ion beam implantation, and the formation of III-V nanocrystals is due to liquid phase epitaxy during flash lamp annealing.

The integration of III-V compound semiconductors into existing semiconductor technology is a milestone in future development of micro- and opto-electronics. III-V compound semiconductor nanocrystals (NCs) were fabricated in Ge and Si substrates by high-fluence ion implantation and short-time flash lamp annealing (FLA). The III-V NC formation takes place after amorphization due to implantation, followed by recrystallization via millisecond liquid phase epitaxy. Using this approach, GaAs and InAs NCs were fabricated. Whereas this formation process was recently investigated for Si, the case of Ge has not been reported yet but shows remarkable differences. In order to get III-V/Ge and III-V/Si heterojunctions in the form of free-standing III-V NCs on Ge and Si nanocolumns an additional selective etching of Ge and Si was performed using H2O2 and KOH solution, respectively. Raman spectroscopy measurements confirmed the formation of III-V NCs within the particular, recrystallized matrices. The microstructural properties of the III-V NCs and the distribution of implanted species were investigated by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). SEM and TEM images show distinct, crystalline NCs. Conductive atomic force microscopy (c-AFM) was performed to investigate the electrical behavior of the fabricated heterojunctions.

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here, we present room-temperature photoluminescence and ellipsometry measurements of Ga100%−xMnxAs alloy. The upshift of the valence band is proven by the redshift of the room temperature near band-gap emission from the Ga100%−xMnxAs alloy with increasingMn content. It is shown that even a doping by 0.02% of Mn affects the valence-band edge, and it merges with the impurity band for a Mn concentration as low as 0.6%. Both x-ray diffraction pattern and high-resolution cross-sectional transmission electron microscopy images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

The integration of III-V compound semiconductors into existing semiconductor technology is a milestone in future development of micro- and opto-electronics. However, one of the main problems is the presence of defects both inside the III-V semiconductor and at its interfaces. In the present case, III-V compound semiconductor nanocrystals (NCs) were fabricated in Si based systems. For NC formation ion implantation and short-time flash lamp annealing (FLA) were used. After the implanted Si is molten by FLA, the NCs grow via liquid phase epitaxy (LPE) in a millisecond regime. Several binary and ternary III-V compounds have been produced using this approach. While binary compounds are fabricated stoichiometrically, ternary compounds can be achieved with varying compositions. Raman spectroscopy measurements confirmed the formation of III-V NCs within the particular, recrystallized matrices and Si doping. Microstructural properties were investigated by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM) and X-ray diffraction analysis. SEM and TEM images show crystalline, strained III-V nanocrystals in recrystallized Si layers.

Semiconductor nanocrystals in dielectric matrices are of great interest for a broad range of applications, especially in the field of photon management in solar cells and for non-volatile memories. In this work we investigate the formation of crystalline Ge nanoparticles in superlattice stacks by flash lamp annealing. In detail, amorphous ZrO2/Ge and SiN/Ge superlattices confined by two SiO2 layers on Si were produced by magnetron-sputtering and plasma-enhanced chemical vapor deposition, respectively. Raman and TEM investigations reveal that, depending on the original Ge layer thickness, crystalline Ge nanoparticles with different aspect ratios will be formed under annealing. As shown by electrical measurements, these layers feature large charge trapping capabilities. We compare these two types of layer systems with regard to the formation process of the Ge nanoparticles, the trapped charge density, the memory window and the retention. Finally, the perspectives for non-volatile memories are discussed, if these layer stacks are downscaled to current device dimensions.

In order to follow Moore’s law on the path to smaller and smaller devices, more and more materials have to be integrated into Si technology. Current research activities focus on the integration of Ge and binary III-V compounds into Si, as these materials promise a further transistor performance increase due to their high hole and electron mobility, respectively. In addition, the direct band gap of most of the compound semiconductors is of great interest for optoelectronic applications. However, the integration into Si generates a lot of challenges regarding both the quality of the III-V material itself and the quality of its interfaces. At present, most integration technologies rely on molecular beam epitaxy or similar growth mechanisms. Recently, we showed that III-V nanocrystals (NC) in Si can also be fabricated by sequential ion implantation followed by flash lamp annealing (FLA) [1]. Moreover, the use of a patterned implantation mask allows the fabrication of III-V NCs in a Si nanowire at defined positions [2]. In this presentation we extend our previous investigations to the case of Ge. In order to get a better understanding of the NC formation process, InAs and GaAs NCs were fabricated in Si and Ge by ion implantation and FLA, and their structural and electric properties were compared to each other. It will be shown that the recrystallization of the near-surface layer of amorphous substrate material (Si or Ge), together with the NC formation, is rather governed by liquid phase than by solid phase epitaxy. This scenario is supported by the evaluation of the corresponding segregation and diffusion coefficients, the temperature profile during FLA and the final size distribution of the NCs. [1] S. Prucnal, S. Facsko, C. Baumgart, H. Schmidt, M.O. Liedke, L. Rebohle, A. Shalimov, H. Reuther, A. Kanjilal, A. Mucklich, M. Helm, J. Zuk, and W. Skorupa, Nano Lett. 11, Issue 7, 2814-2818 (2011) [2] S. Prucnal, M. Glaser, A. Lugstein, E. Bertagnolli, M. Stöger-Pollach, S. Zhou, M. Helm, D. Reichel, L. Rebohle, M. Turek, J. Zuk, and W. Skorupa, Nano Res. 7, 1769 (2014)

The integration of III-V compound semiconductors into silicon is a substantial research field for the progress of micro- and optoelectronic device technology. We fabricated various III-V compound semiconductor nanocrystals (NCs) in Si and SOI substrates by sequential high fluence ion beam implantation and ultra-short flash lamp annealing (FLA). Single-crystalline GaAs, GaP, GaSb, InAs, InP and InSb NCs were grown by liquid phase epitaxy during FLA. Additionally, precise positioning of NCs was achieved by using a lithographically patterned aluminum mask layer for ion implantation. The characterization of the NCs was performed by using Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Rutherford Backscattering (RBS). Raman measurements confirmed the formation of III-V NCs. AFM and SEM were used to control surface morphology and to investigate the lateral NC distribution. RBS monitored the distribution of the implanted ions. TEM images show distinct, single-crystalline NCs of various shapes. The shape and size of the NCs varies from large domes over small spherical precipitates to conical and pyramidal nanostructures depending on the processing conditions.

InAs, InGaAs and GaAs nanocrystals (NCs) were fabricated by sequential ion implantation and flash lamp annealing. In detail, silicon-SiO2-silicon structures were provided with a SiO2 capping layer followed by the sequential implantation of In, Ga and As ions with fluences in the range of a few 1016 at./cm2. In the following step of flash lamp annealing the NCs will be formed in the Si device layer by liquid phase epitaxy. The resulting III-V NCs are mostly single-crystalline with sizes in the range of a few to a few tens of nm. Depending on the specific segregation coefficients and melting temperatures, elemental In clusters can be also formed. The proposed qualitative model for the NC formation is based on Transmission electron microscopy (TEM), Raman spectroscopy, and X-ray diffraction (XRD) measurements.