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The electronic, optical, and magnetic properties of Nd-doped ZnO systems were calculated using the DFT/GGA + U method. According to the results, the Nd dopant causes lattice parameter expansion, negative formation energy, and bandgap narrowing, resulting in the formation of an N-type degenerate semiconductor. Overlapping of the generated impurity and Fermi levels results in a significant trap effect that prevents electron-hole recombination. The absorption spectrum demonstrates a redshift in the visible region, and the intensity increased, leading to enhanced photocatalytic performance. The Nd-doped ZnO system displays ferromagnetic, with FM coupling due to strong spd-f hybridization through magnetic exchange interaction between the Nd-4f state and O-2p, Zn-4s, and Zn-3p states. These findings imply that Nd-doped ZnO may be a promising material for DMS spintronic devices. [ABSTRACT FROM AUTHOR]

Based on the density functional theory, the effect of rare-earth La doping at different concentrations on the electronic structure, optical properties, and magnetic properties of ZnO was calculated by using the GGA+U method under the condition of spin polarization. The calculation results show that the cell of a La-doped ZnO system is distorted, resulting in a formation energy less than zero, in which case it is easy to dope. After La doping, the band gap narrows, the Fermi level enters the conduction band, and the excess carriers induced by La atoms degenerate to form n-type degenerate semiconductor materials. In the visible light region, a blue shift in the optical absorption edge of the La-doped ZnO system causes an increased average static dielectric constant, stronger polarization ability, stronger binding ability on charges, and the photoconductivity of the doped ZnO system is improved. The magnetic moment of the La-doped ZnO system is zero, so it is not magnetic. [ABSTRACT FROM AUTHOR]