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SiC MOSFETs have received great attention due to their excellent electrothermal properties. Accurate junction temperature information of SiC MOSFETs ensures safe operation and helps effective thermal management. However, the existing thermal models have limits to correctly predict the thermal behaviors, whose parameter extraction processes are normally complicated. Most of the thermal models generally omit the temperature effects, which greatly impairs their usefulness and effectiveness. Here, a temperature-dependent physical resistor–capacitor (RC) network model is proposed, which can accurately characterize the thermal behavior of SiC MOSFETs particularly under high-temperature conditions. Meanwhile, the boundary conditions are fully investigated and modeled, which guarantees the adaptation of the proposed model for different real-field applications. The proposed method can remarkably simplify the process of parameter extraction since only the steady-state temperature distribution information is required with the assistance of finite-element method (FEM). Finally, the effectiveness and the robustness of the proposed model are validated by FEM simulation and experiments. [ABSTRACT FROM AUTHOR]

As a classical insulated gate bipolar transistor (IGBT) structure, the trench-gate field-stop (FS) IGBT has been widely used. For more convenient application, physics-based trench-gate FS IGBT models have received great attentions due to its effectiveness in simulating key device properties. However, current IGBT modeling studies for this popular IGBT chip seldom investigate the depletion layer behavior under the trench-gate structure. This article first derives the physics-based miller capacitance formula for the trench-gate structure according to finite element method (FEM) simulation. Another haunting issue for these physics-based IGBT models is that the intrinsic device parameters are difficult to be extracted appropriately. Thus, an FEM FS IGBT model is established in Sentaurus TCAD as the benchmark. Then, an improved parameter extraction procedure for a Fourier-series-based (FSB) IGBT model is proposed based on the improved miller capacitance formula. By the particle swarm optimization algorithm, key device parameters for the FSB IGBT model can be successfully extracted by fitting the simulated waveforms to those by FEM simulation at a randomly selected turn-off operating condition. Parameters extracted through the proposed procedure using the FSB IGBT model with the improved miller capacitance formula are very close to the device parameters of the FEM model. More importantly, the reliability and the robustness of the extracted parameters are further validated by comparing the waveforms of FSB model with those of FEM model at different operating conditions. [ABSTRACT FROM AUTHOR]

Reliability of bond wires in power modules has been a main subject of interest in both industry and academia. Until now, analytical modeling of thermo-mechanical stress mainly focuses on the loop height variation of bond wires instead of plastic strain, which is the key factor causing the fatigue failure. In this paper, an analytical model for analyzing plastic strain of bond wires in IGBT modules is proposed. Using a laser displacement sensor, the dynamic loop height variations of bond wires under different heating currents are experimentally measured, based on which the finite element analysis (FEA) simulation is calibrated and verified to reveal the actual thermo-mechanical stress. In this way, the usefulness of our proposed method is verified by comparing its simulation results with those from the multi-physics fields FEA method. Finally, the relationship between the bonding angle and the plastic strain at the heel of bond wires is established. This study would provide new perspectives into further research on thermo-mechanical fatigue analysis and optimal design of bond wires in power modules. • An analytical model for analyzing plastic strain of bond wires in IGBT modules is proposed. • The FEA simulation is calibrated based on the experimental results of loop top displacement. • The relationship between the bonding angle and the plastic strain at the heel of bond wires is established. • The models have been compared with FEA simulation results with good agreements. [ABSTRACT FROM AUTHOR]

Physical lifetime prediction methods based on inelastic strain energy density (energy-based lifetime prediction) have been proven to be effective in producing reliable results on small solder joints (ball-grid arrays or chip-scale package) due to their capabilities to represent physical characteristics of soldering materials and loading history. However, in the existing energy-based lifetime models for solder layer failure the inelastic strain energy density is usually assumed to unchanged during aging, which is untrue particularly for large-area solder joints when crack propagation is considered. In this paper, an energy-based lifetime prediction method is proposed for failure of IGBT modules by explicit emulation of solder layer degradation. Inelastic strain energy density variances with respect to aging are meticulously modeled. The large-area solder layer is evenly divided into meshed elements, birth and death technique in finite element analysis (FEA) is used to successively emulate crack propagation. In this way, the increment of thermal resistance due to the solder layer degradation can be predicted. The lifetime prediction results by our proposed method show nice agreement with the experiment under different aging conditions. • An energy-based lifetime prediction method is proposed for failure of IGBT modules • Birth and death technique in FEA is used to successively emulate crack propagation • The increment of thermal resistance due to the solder layer degradation can be predicted • ΔW will change with different aging stage [ABSTRACT FROM AUTHOR]