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As the nano scale device performance depends on the detailed engineering of the dopant distribution, advanced doping processes are required. Progressing towards 3D-structures like FinFETs, studying the dopant gate overlap and conformality of doping calls for metrology with 3D-resolution and the ability to confine the analyzed volume to a small 3D-structure. We demonstrate that through an appropriate methodology this is feasible using Atom Probe Tomography (APT). We extract the 3D-dopant profile and important parameters such as gate overlap and profile steepness, from transistor formed with plasma doping processes. Analyzing samples with different doping processes, the APT results are entirely consistent with device performances (Ioff vs. Ion). [ABSTRACT FROM PUBLISHER]

We demonstrate a novel photoresist-compatible FinFET doping technique that combines the advantages of deposition and implantation. Energy and deposition thickness optimization for the Ion Assisted Deposition and Doping (IADD) process provides excellent doping of nMOS extensions, thus reducing external resistance REXT. On current ION is improved by 6–8% for LG of 26–30 nm and by 15% for LG of 20 nm, with better SCE and DIBL. [ABSTRACT FROM PUBLISHER]

We report extensive statistical NBTI reliability measurements of nanoscaled FETs of different technologies, based on which we propose a 1/area scaling rule for the statistical impact of individual charged gate oxide defects on the electrical characteristic of deeply scaled transistors. Among the considered technologies, nanoscaled SiGe channel devices show smallest time-dependent variability. Furthermore, we report comprehensive measurements of the impact of individual trapped charges on the entire FET ID-VG characteristic. Comparing with 3D atomistic device simulations, we identify several characteristic behaviors depending on the interplay between the location of the oxide defect and the underlying random dopant distribution. [ABSTRACT FROM PUBLISHER]