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We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532 nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices. [ABSTRACT FROM AUTHOR]

Widely varying mobility values of CdS metal-oxide-semiconductor field-effect transistors have been reported in the literature (μ = 1-48 cm2/Vs). Sulfide vacancies in CdS channel generated by an incomplete post deposition anneal are found to be the origin of scattered mobility values. The presence of sulfide vacancies can be easily diagnosed by simple electrical measurements checking a strong channel length dependence of mobility and an abrupt drain current increase due to the carrier ionization at sulfur vacancies. [ABSTRACT FROM AUTHOR]