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We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity, ρ, on gate voltage, V g , for a series of monolayer graphene field effect transistors with mobilities, μ, ranging between 5000 and 250 000 cm2 V−1 s−1 at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relation μ = 4 / e δ n max for all devices, where ρ max is the resistivity maximum at the neutrality point and δn is an 'uncertainty' in the bipolar carrier density, given by the full width at half maximum of the resistivity peak expressed in terms of carrier density, n. This relation is consistent with thermal broadening of the carrier distribution and the presence of the disordered potential landscape consisting of so-called electron–hole puddles near the Dirac point. To demonstrate its utility, we combine this relation with temperature-dependent linearised Boltzmann transport calculations that include the effect of optical phonon scattering. This approach demonstrates the similarity in the temperature-dependent behaviour of carriers in different types of single layer graphene transistors with widely differing carrier mobilities. It can also account for the relative stability, over a wide temperature range, of the measured carrier mobility of each device. [ABSTRACT FROM AUTHOR]

2D materials have unique structural and electronic properties with potential for transformative device applications. However, such devices are usually bespoke structures made by sequential deposition of exfoliated 2D layers. There is a need for scalable manufacturing techniques capable of producing high‐quality large‐area devices comprising multiple 2D materials. Additive manufacturing with inks containing 2D material flakes is a promising solution. Inkjet‐printed devices incorporating 2D materials have been demonstrated, however there is a need for greater understanding of quantum transport phenomena as well as their structural properties. Experimental and theoretical studies of inkjet‐printed graphene structures are presented. Detailed electrical and structural characterization is reported and explained by comparison with transport modeling that include inter‐flake quantum tunneling transport and percolation dynamics. The results reveal that the electrical properties are strongly influenced by the flakes packing fraction and by complex meandering electron trajectories, which traverse several printed layers. Controlling these trajectories is essential for printing high‐quality devices that exploit the properties of 2D materials. Inkjet‐printed graphene is used to make a field effect transistor and Ohmic contacts on an InSe phototransistor. This is the first time that inkjet‐printed graphene has successfully replaced single layer graphene as a contact material for 2D metal chalcogenides. [ABSTRACT FROM AUTHOR]