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Exploitation of low‐dimensional metal‐oxide semiconductor nanowires (MOS NWs) with peculiar and radial coaxial architectures is of great significance for constructing nanoscale, high‐performance, multi‐module integrable functional electronic products. Here, highly ordered In2O3@ZnO coaxial NW arrays (CNWA) using a simple and economical electrospinning technique are synthesized and assembled into field‐effect transistors (FETs). Featuring strong carrier effusion efficiency at the In2O3@ZnO circular heterogeneous interface, the field effect mobility (εFE) gets an intrinsic improvement and can reach as high as 202.3 cm2 V‒1 s‒1 for high‐k‐based CNWA FETs, which exceeds the performance of oxide‐based FETs devices reported by far. Furthermore, the unique structural advantages endowing In2O3@ZnO CNWA FETs with excellent optoelectronic coupling capabilities are identified, for which further optoelectronic detection and artificial photonic synaptic devices are constructed and functional simulations are implemented. This work offers new insights in designing optoelectronics and artificial synapses to process and recognize information for neuromorphic computing and artificial intelligence applications. [ABSTRACT FROM AUTHOR]

Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics. [ABSTRACT FROM AUTHOR]

Electronics on paper enable some specific applications out of conventional ones which require innovative approaches and concepts on the design of devices and systems. Within this context, this work demonstrates that a unique set of characteristics can be combined in planar dual-gate oxide-based field effect transistors with a back floating electrode using paper simultaneously as substrate and dielectric. The working principle of these transistors relies on the formation of electric double layers at the semiconductor/paper and paper/back floating electrode interfaces (associated to ions displacement within the paper) that can be disturbed by a voltage applied at a secondary gate, by the back floating potential or by the combination of both. This feature allows for the control of the on-voltage of the transistors, from depletion to enhancement mode, for instance. Moreover, this specific characteristic allows the implementation of universal logic gates (NAND and NOR) using only one transistor, by setting the proper combination of the voltage level applied at each gate. This way a simple and universal device architecture can be envisaged towards the simplification of the production of low power electronic systems on paper. [ABSTRACT FROM AUTHOR]

Abstract: The fabrication of functionalized 1D oxide fibers with accurate control of orientation, location, and number is highly demanded and challengeable based on current techniques, which hinder their practical application in opto/electronic devices. Herein, a rapid and simple method is developed to directly draw the oxide fibers from its polymer solution over large area. The draw‐spinning method enables the accurate positioning of individual fiber and the construction of complex patterns, holding great potentials in fiber‐based electronics. The assembled field‐effect transistors (FETs) based on single indium oxide (In2O3) fiber exhibit excellent current modulation capability with a high on/off current ratio of 106. Adjusting the number of fibers within the channel, the device performance can be modulated. Moreover, the draw‐spinning technique is applied to fabricate highly aligned fiber arrays by using brush pen. The FETs based on aligned In2O3 fiber arrays exhibit superior current‐driven capability compared with the devices with limited number of fibers. Their further integrations on high‐permittivity dielectric layer show improved device performance at an operating voltage of 4 V. This method is scalable and can be implemented easily to fabricate various functional fibers in both laboratory and industrial manufacturing. [ABSTRACT FROM AUTHOR]

When thinking on low cost and sustainable electronic systems, paper can be considered as an interesting option to be used as substrate but also as a component of such systems. In this work we have tailored paper samples that were used simultaneously as physical support and dielectric in oxide based paper field effect transistors (FETs). It was observed that the gate leakage current in these devices depends directly from fibril's dimension and arrangement, being lower for micro/nano fibrillated cellulose paper. Moreover, extra ionic charge added to the paper during its production results in the improvement of FETs' electrical properties, with saturation mobility of 16 cm 2V -1s -1 and on/off current ratio close to 105. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

In the last decade the use of field-effect-based devices has become a basic structural element in a new generation of biosensors that allow label-free DNA analysis. In particular, ion sensitive field effect transistors (FET) are the basis for the development of radical new approaches for the specific detection and characterization of DNA due to FETs' greater signal-to-noise ratio, fast measurement capabilities, and possibility to be included in portable instrumentation. Reliable molecular characterization of DNA and/or RNA is vital for disease diagnostics and to follow up alterations in gene expression profiles. FET biosensors may become a relevant tool for molecular diagnostics and at point-of-care. The development of these devices and strategies should be carefully designed, as biomolecular recognition and detection events must occur within the Debye length. This limitation is sometimes considered to be fundamental for FET devices and considerable efforts have been made to develop better architectures. Herein we review the use of field effect sensors for nucleic acid detection strategies--from production and functionalization to integration in molecular diagnostics platforms, with special focus on those that have made their way into the diagnostics lab. [ABSTRACT FROM AUTHOR]

The ability to process and dimensionally scale field-effect transistors with and on paper and to integrate them as a core component for low-power-consumption analog and digital circuits is demonstrated. Low-temperature-processed p- and n-channel integrated oxide thin-film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low-cost, recyclable paper substrates. The possibility of building these circuits using low-temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low-power circuitry with a recyclable substrate is an important step towards greener electronics. [ABSTRACT FROM AUTHOR]

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2/V s with an Ion/Ioff ratio of 6×107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications. [ABSTRACT FROM AUTHOR]

We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and -14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V-1 s-1, respectively, and estimated charge retention times above 14 000 h. [ABSTRACT FROM AUTHOR]

The integration of bioinspired chiral cellulose nanocrystal (CNC) films into transistor devices with distinct sensing properties for left‐ and right‐handed circular polarized light (LCPL and RCPL, respectively) is reported. The CNC films with a left‐handed internal long‐range order are infiltrated with sodium ions to yield solid‐state electrolytes with photonic properties capable of LCPL reflection and RCPL transmission. They are employed as gate dielectrics in sputtered amorphous indium–gallium–zinc oxide (a‐IGZO) transistors. The obtained devices operate in depletion mode at low voltages (<2 V) with On–Off ratios of up to 7 orders of magnitude, subthreshold swings around 80 mV dec−1, and saturation mobilities up to 9 cm2 V−1 s−1. Combining the photonic character of the CNC films with the light sensitivity of a‐IGZO, the devices are capable of discrimination between LCPL and RCPL signals in the blue region. These type of devices can find application in photonics, emission, conversion, or sensing with CPL but also imaging or spintronics. [ABSTRACT FROM AUTHOR]