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Carbon nanotubes (CNTs) are well known for their outstanding field emission (FE) performance, facilitated by their unique combination of electrical, mechanical, and thermal properties. However, if the substrate of choice is a poor conductor, the electron supply towards the CNTs can be limited, restricting the FE current. Furthermore, ineffective heat dissipation can lead to emitter–substrate bond degradation, shortening the field emitters' lifetime. Herein, temperature-stable titanium nitride (TiN) was deposited by plasma-enhanced atomic layer deposition (PEALD) on different substrate types prior to the CNT growth. A turn-on field reduction of up to 59% was found for the emitters that were generated on TiN-coated bulk substrates instead of on pristine ones. This observation was attributed exclusively to the TiN layer as no significant change in the emitter morphology could be identified. The fabrication route and, consequently, improved FE properties were transferred from bulk substrates to free-standing, electrically insulating nanomembranes. Moreover, 3D-printed, polymeric microstructures were overcoated by atomic layer deposition (ALD) employing its high conformality. The results of our approach by combining ALD with CNT growth could assist the future fabrication of highly efficient field emitters on 3D scaffold structures regardless of the substrate material. [ABSTRACT FROM AUTHOR]

Excited by an energetic electron beam, field enhanced electron emission from a silicon nanomembrane is examined by using a local current probe. The experiments reveal clear transitions from conventional secondary electron emission (SEE) to sub-threshold field electron emission (SFE) and then to conventional field electron emission (FEE). An electron yield of more than 104 is obtained and a model of sub-threshold emission is verified. Ultra sensitive charge/particle detectors could be realized by implementing sub-threshold field emission in nano scale structures, where electron excitations occur within the screen depth of surface electric field. [ABSTRACT FROM AUTHOR]

We fabricated nanoscale field electron emitters formed by highly-doped silicon nanopillars on a silicon membrane. Electron-beam induced deposition of carbon-based contaminants is employed as a probe of the spatial activity of electron emission from the nanopillars. In stark contrast to the general assumption that field emission only occurs at the tips of nanoscale emitters, we found strong emission from the sidewalls of the nanopillars. This is revealed by the deposition of carbon contaminants on these sidewalls, so that the nanopillars finally resemble marshmallows. We conclude that field emission from nanostructured surfaces is more intricate than previously expected. [ABSTRACT FROM AUTHOR]

The possibility to gradually increase the porosity of thin films facilitates a variety of applications, such as anti-reflective coatings, diffusion membranes, and the herein investigated tailored nanostructuring of a substrate for subsequent self-assembly processes. A low-temperature (<160 °C) preparation route for porous silicon oxide (porSiO2) thin films with porosities of about 60% and effective refractive indices down to 1.20 is tailored for bulk as well as free-standing membranes. Subsequently, both substrate types are successfully employed for the catalyst-assisted growth of nanowire-like zinc oxide (ZnO) field emitters by metal organic chemical vapor deposition. ZnO nanowires can be grown with a large aspect ratio and exhibit a good thermal and chemical stability, which makes them excellent candidates for field emitter arrays. We present a method that allows for the direct synthesis of nanowire-like ZnO field emitters on free-standing membranes using a porSiO2 template. Besides the application of porSiO2 for the catalyst-assisted growth of nanostructures and their use as field emission devices, the herein presented general synthesis route for the preparation of low refractive index films on other than bulk substrates—such as on free-standing, ultra-thin membranes—may pave the way for the employment of porSiO2 in micro-electro-mechanical systems. [ABSTRACT FROM AUTHOR]

We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A subthreshold electric field applied on the emission side of the membrane enhances the number of electrons emitted by two orders of magnitude. This enhancement stems from field emitted electrons stimulated by the incident particles, which suggests that stacks of silicon membranes can form ultrasensitive electron multipliers. [ABSTRACT FROM AUTHOR]

One-dimensional zinc oxide nanostructures have aroused interest from scientists and engineers for electron field emission applications because of their experimentally accessible high aspect ratio in combination with their low work function. A comprehensive study of the vapor-solid growth of zinc oxide (ZnO) nanowhiskers by utilizing zinc acetylacetonate hydrate and oxygen at low temperature (580 °C) is reported herein. The nanowhiskers morphology was investigated by varying different growth parameters, such as temperature, substrate type and position, gas flow, precursor amount, and growth time. According to the obtained parameter dependences, the process was optimized to achieve homogenous crystalline nanowhiskers with high aspect ratios and clearly defined surface facets and tips. We show electron field emission measurements from tailor-made ZnO nanowhiskers grown on n-doped silicon, titanium thin films, and free-standing silicon nitride membranes, revealing field emission turn-on fields significantly lower compared to a perfect flat ZnO thin film. Especially the latter devices—ZnO nanowhiskers on a free-standing membrane—might pave the way into a novel nanomembrane detector unit in proteomics, which can significantly extend the mass range of current time-of-flight mass spectrometers. [ABSTRACT FROM AUTHOR]

We demonstrate the transition of a coupled electron shuttle from a stable to a strongly nonlinear response at room temperature. Within this transition we observe the coupled shuttle''s response to change from Coulomb controlled to conventional field emission. This parametric process is fully reversible and occurs within a broad frequency range. In combination, the large current and wide frequency band enable energy harvesting applications. The experimental data and the numerical calculations both indicate that the source of the nonlinearity is given by the electromechanical coupling of electron shuttling. [ABSTRACT FROM AUTHOR]