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Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl (3 nm)/Ru (x nm)/Co2FeAl (5 nm) synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm is strongly antiferromagnetic coupled, which is maintained after annealing at 150 °C for 1 h. The structure has a very low saturation magnetization Ms of 425 emu/cm3, a low switching field Hsw of 4.3 Oe, and a high saturation field Hs of 5257 Oe at room temperature, which are favorable for application in ultrahigh density magnetic read heads or other magnetic memory devices. Crystal structure study testifies that the as-deposited Co2FeAl film is in the B2 phase. Therefore, Heusler alloys can be used to fabricate synthetic antiferromagnetic and it is possible to make “all-Heusler” spin valves or magnetic tunneling junctions with better magnetic switching properties and high magnetoresistance. [ABSTRACT FROM AUTHOR]

We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed laser deposition show ferromagnetic behavior at room temperature. The saturation magnetization increases monotonically from 0 to 1.5 emu/cm3 with the increasing boron component x from 0% to 6.8%. The first-principles calculations demonstrate that the ferromagnetism in the B-doped ZnO originates from the induced magnetic moment of oxygen atoms in the nearest neighbor sites to B-Zn vacancy pairs. The calculated total magnetic moment shows an increasing trend with the boron component which is consistent with experiment. [ABSTRACT FROM AUTHOR]