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Dielectric SrMoO4 thin films were deposited from Sr2FeMoO6 target in oxygen atmosphere, showing obvious M–H hysteresis loops at room temperature. It was revealed by transmission electron microscopy that SrFeO3 nanoparticles are dispersed in the SrMoO4 grains, to which the hystersis loops of the thin films are ascribed. This SrMoO4 thin film can be useful as a barrier material for Sr2FeMoO6-based devices, owing to easy fabrication process and compatibility with Sr2FeMoO6. Magnetic SrFeO3 nanoparticles are expected to enhance tunneling magnetoresistance.

Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.