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We investigate the electron transport in the presence of electric field and gate potential in a supperlattice of normal/ferromagnetic/normal silicene junction. We compute the total conductance and Fano factor using the transfer matrix method and Landauer-Buttiker formula. The total conductance and Fano factor of the silicene contain interesting information of the transport properties of the charge carriers. The dependence of the Fano factor behavior on the electric field strength, the gate potential, the thickness of the ferromagnetic region and more importantly the dependence on the number of barriers have been plotted. Our aim is to achieve a more accurate picture of the dependence of the Fano factor on parameters mentioned above. In this junction, Fano factor oscillates with the thickness of the ferromagnetic region, the electric field strength and the gate voltage in the ferromagnetic regions. Also we found that diffusive transport ( F = 1 / 3 ) occurs by taking large enough length of the ferromagnetic regions and tiny electric field strength. Another remarkable point is that Fano factor attains the full Poissonian value ( F = 1 ) , by controlling the electric field strength and the length of the ferromagnetic regions. We see that with remaining intact the conductance, we can change the transport from Poissonian to diffusive transport by controlling the length of the ferromagnetic regions. However, these findings occur exactly in the case of Δ z E = 0.5 when the number of barriers is large enough. Moreover, with considering dependence of the Fano factor on the electrostatic potential and electric field strength, we have proved that these parameters are controllable parameters on the kind of transport. It is said that Fano factor is very sensitive to the mentioned parameters and can be controlled by these parameters. In fact, we show that the value of Fano factor is a valuable tool for distinguishing the behavior of transport whereas this kind of information cannot be extracted from the conductance. [ABSTRACT FROM AUTHOR]

In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications. [ABSTRACT FROM AUTHOR]