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Recent experiments indicate that films of V1-xCrxO2 may be obtained which retain the tetragonal rutile phase to low temperature. In order to better understand this system we have calculated its electronic structure using density functional theory in the generalized gradient approximation and density functional theory with empirical on-site Coulomb correlations (LDA+U). Within these approximations we find that the ground state of rutile phase V1-xCrxO2 is quite simple. Both V and Cr are in the +4 state, implying that the V and Cr ions have moments of 1μB and 2μB, respectively. Similar to CrO2, V1-xCrxO2 is predicted to be ferromagnetic and half-metallic. Our results appear to be consistent with the experimental observations that VO2 is paramagnetic and metallic for temperatures above 340 K where it is stable. It is not clear, however, that these results are completely consistent with recent experimental observations of ferromagnetism at low temperature in V1-xCrxO2 for x=0.1 and x=0.2. [ABSTRACT FROM AUTHOR]

We present tight-binding calculations of the spin torque in noncollinear magnetic tunnel junctions based on the nonequilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach and the divergence of the spin current. We show that both methods are equivalent, i.e., the absorption of the spin current at the interface is equivalent to the exchange interaction between the electron spins and the local magnetization. The transverse components of the spin torque parallel and perpendicular to the interface oscillate with different phase and decay in the ferromagnetic layer (FM) as a function of the distance from the interface. The period of oscillations is inversely proportional to the difference between the Fermi momentum of the majority and minority electrons. The phase difference between the two transverse components of the spin torque is due to the precession of the electron spins around the exchange field in the FM layer. In the absence of applied bias and for a relatively thin barrier, the component of the spin torque perpendicular to the interface is nonzero due to the exchange coupling between the FM layers across the barrier. [ABSTRACT FROM AUTHOR]

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices. [ABSTRACT FROM AUTHOR]

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides was investigated via first-principles calculations. In this work very large values of PMA, up to 3 erg/cm2, at Fe∣MgO interfaces are reported, in agreement with recent experiments. The origin of PMA is attributed to overlap between O-pz and transition metal dz2 orbitals hybridized with dxz(yz) orbitals with stronger spin-orbit coupling-induced splitting around the Fermi level for perpendicular magnetization orientation. Furthermore, it is shown that the PMA value weakens in the case of over- or underoxidation due to the fact that oxygen pz and transition metal dz2 orbital overlap is strongly affected by disorder, in agreement with experimental observations in magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

The so-called zigzag edge of graphenes theoretically has localized electrons due to the presence of flat energy bands near the Fermi level. The localized electron spins are strongly polarized, resulting in ferromagnetism. We fabricate graphenes with honeycomb-like arrays of hydrogen-terminated and low-defect hexagonal nanopores by a nonlithographic method using nanoporous alumina templates. We report large-magnitude room-temperature ferromagnetism caused by electron spins localizing at the zigzag nanopore edges. This promises to be a realization of rare-element free, controllable, transparent, flexible, and mono-atomic layer magnets and novel spintronic devices. [ABSTRACT FROM AUTHOR]

While the discovery of two-dimensional (2D) magnets opens the door for fundamental physics and next-generation spintronics, it is technically challenging to achieve the room-temperature ferromagnetic (FM) order in a way compatible with potential device applications. Here, we report the growth and properties of single- and few-layer CrTe2, a van der Waals (vdW) material, on bilayer graphene by molecular beam epitaxy (MBE). Intrinsic ferromagnetism with a Curie temperature (TC) up to 300 K, an atomic magnetic moment of ~0.21 μ B /Cr and perpendicular magnetic anisotropy (PMA) constant (Ku) of 4.89 × 105 erg/cm3 at room temperature in these few-monolayer films have been unambiguously evidenced by superconducting quantum interference device and X-ray magnetic circular dichroism. This intrinsic ferromagnetism has also been identified by the splitting of majority and minority band dispersions with ~0.2 eV at Г point using angle-resolved photoemission spectroscopy. The FM order is preserved with the film thickness down to a monolayer (TC ~ 200 K), benefiting from the strong PMA and weak interlayer coupling. The successful MBE growth of 2D FM CrTe2 films with room-temperature ferromagnetism opens a new avenue for developing large-scale 2D magnet-based spintronics devices. The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature. Here, Zhang et al present CrTe2 thin films grown via molecular beam epitaxy with a Curie temperature exceeding 300 K. [ABSTRACT FROM AUTHOR]

Dzyaloshinskii–Moriya interaction, DMI in short, represents an antisymmetric type of magnetic interactions that favor orthogonal orientation of spins and competes with Heisenberg exchange. Being introduced to explain weak ferromagnetism in antiferromagnets without an inversion center between magnetic atoms such an anisotropic interaction can be used to analyze other non-trivial magnetic structures of technological importance including spin spirals and skyrmions. Despite the fact that the corresponding DMI contribution to the magnetic energy of the system has a very compact form of the vector product of spins, the determination of DMI from first-principles electronic structure is a very challenging methodological and technical problem whose solution opens a door into the fascinating microscopic world of complex magnetic materials. In this paper we review a few such methods developed by us for calculating DMI and their applications to study the properties of real materials. [ABSTRACT FROM AUTHOR]

Recent experiments indicate that films of V1-xCrxO2 may be obtained which retain the tetragonal rutile phase to low temperature. In order to better understand this system we have calculated its electronic structure using density functional theory in the generalized gradient approximation and density functional theory with empirical on-site Coulomb correlations (LDA+U). Within these approximations we find that the ground state of rutile phase V1-xCrxO2 is quite simple. Both V and Cr are in the +4 state, implying that the V and Cr ions have moments of 1μB and 2μB, respectively. Similar to CrO2, V1-xCrxO2 is predicted to be ferromagnetic and half-metallic. Our results appear to be consistent with the experimental observations that VO2 is paramagnetic and metallic for temperatures above 340 K where it is stable. It is not clear, however, that these results are completely consistent with recent experimental observations of ferromagnetism at low temperature in V1-xCrxO2 for x=0.1 and x=0.2. [ABSTRACT FROM AUTHOR]

Electric-field-driven oxygen ion evolution in the metal/oxide heterostructures emerges as an effective approach to achieve the electric-field control of ferromagnetism. However, the involved redox reaction of the metal layer typically requires extended operation time and elevated temperature condition, which greatly hinders its practical applications. Here, we achieve reversible sub-millisecond and room-temperature electric-field control of ferromagnetism in the Co layer of a Co/SrCoO2.5 system accompanied by bipolar resistance switching. In contrast to the previously reported redox reaction scenario, the oxygen ion evolution occurs only within the SrCoO2.5 layer, which serves as an oxygen ion gating layer, leading to modulation of the interfacial oxygen stoichiometry and magnetic state. This work identifies a simple and effective pathway to realize the electric-field control of ferromagnetism at room temperature, and may lead to applications that take advantage of both the resistance switching and magnetoelectric coupling. [ABSTRACT FROM AUTHOR]

Six ternary compounds Pb A M ( A=S and Se; M=B, C and N) with a NaCl structure were calculated to study the structure, electronic, and magnetic properties of them. The calculations were performed using the first-principles plane wave pseudopotential method within the generalized gradient approximation. The calculations reveal that ferromagnetism can be realized for C- and N-doping while B substitution does not induce magnetism in PbS and PbSe systems. The total energy calculations show that the ferromagnetic state is more stable as compared to a nonmagnetic state at their equilibrium lattices. Spin-dependent electronic band structure, total, and partial densities of state calculations demonstrate that the 2 p-states of C- and N-dopants around Fermi level are responsible for ferromagnetism. Furthermore, equilibrium lattice constant, bond length, local magnetic moments, total magnetic moments, and robustness of ferromagnetism have been calculated. Particularly, the negative pressure calculations indicate that C-doping lead chalcogenides can change to half-metallic ferromagnetism materials. [ABSTRACT FROM AUTHOR]

The first-principles plane wave pseudopotential method within the generalized gradient approximation (GGA) is used to calculate the magnetic moment, volume, total energy of C doped alkaline-earth oxides XCO ( X=Ca, Sr, and Ba) and band structure, electronic state density of CaCO at ambient as well as at high pressure. Results show that the XCO ferromagnetism decreases, and finally the second-order magnetic phase transition occurs from ferromagnetic (FM) to nonmagnetic (NM) state when increasing the pressure. The main reason of the pressure-induced magnetic transition and the magnetic collapse result from band widening in anion p states. At 69 GPa, the spin contribution of C atoms in CaCO decreases remarkably. This is due to the C- p in which majority spin states are increased while minority spin states are decreased. [ABSTRACT FROM AUTHOR]

Theoretically, the so-called zigzag edge of graphenes provides localized electrons due to the presence of flat energy bands near the Fermi level. Spin interaction makes the localized spins strongly polarized, yielding ferromagnetism. However, in most experimental studies, ferromagnetism has been observed in uncontrollable and complicated carbon-based systems. Here, we fabricate graphenes with honeycomblike arrays of hexagonal nanopores, which have a large ensemble of hydrogen-terminated and low-defect pore edges that are prepared by a nonlithographic method (nanoporous alumina templates). We observe large-magnitude ferromagnetism derived from electron spins localizing at the zigzag nanopore edges. This promises to be a realization of graphene magnets and novel spintronic devices. [ABSTRACT FROM AUTHOR]

The transfer of spin angular momentum from a spin-polarized current to a ferromagnet can generate sufficient torque to reorient the magnet’s moment. This torque could enable the development of efficient electrically actuated magnetic memories and nanoscale microwave oscillators. Yet difficulties in making quantitative measurements of the spin-torque vector have hampered understanding. Here we present direct measurements of both the magnitude and direction of the spin torque in magnetic tunnel junctions, the type of device of primary interest for applications. At low bias V, the differential torque dτ/dV lies in the plane defined by the electrode magnetizations, and its magnitude is in excellent agreement with recent predictions for near-perfect spin-polarized tunnelling. We find that the strength of the in-plane differential torque remains almost constant with increasing bias, despite a substantial decrease in the device magnetoresistance, and that with bias the torque vector also rotates out of the plane. [ABSTRACT FROM AUTHOR]

The electronic transport is studied for a carbon nanotube quantum dot with one ferromagnetic and one superconducting lead. We observe a gap in the conductance which is consistent with the energy gap of a superconductor. For bias voltages well above this gap, we observe spin-diode behavior. Low-bias measurements below the sequential-tunneling regime indicate that the spin-diode effect is suppressed. Additionally, the spin-diode effect is even reversed at bias voltages below the superconducting energy gap. [ABSTRACT FROM AUTHOR]

MgAl2O4 (MAO)-based magnetic tunnel junctions (MTJs) with an MAO thickness of ~1.25 nm are fabricated and their cycling characteristics under dynamic voltage stress are evaluated. The speed of breakdown strongly depended on the pulse polarities used, bipolar, positive (+) unipolar, and negative (-) unipolar. The bipolar condition yielded more rapid breakdown under cycling. Between the two unipolar conditions, positive bias yielded more rapid breakdown than negative bias; the difference between these is understood to arise from the conditions of the interface between the MAO and ferromagnetic layers. Among apparently normal MTJ cells showing little resistance drift, 20% were degraded during a long cycling test in the bipolar stress condition. Thus, the use of bipolar voltage stress is essential to screen for potentially defective MTJs, and the asymmetric condition at the interface is minimised by process control for application of the simple unipolar bias condition. [ABSTRACT FROM AUTHOR]

Spin-transfer torque nano-oscillators (STNO) are important candidates for several applications based on ultra-tunable microwave generation and detection. The microwave dynamics in these STNOs are induced by spin currents that are typically generated either by spin polarization in an adjacent ferromagnetic layer or through the spin Hall effect. In this paper, a 3-terminal STNO based on a magnetic tunnel junction is excited by both of these spin injection mechanisms. The combination of these two mechanisms excites the free layer into dynamic regimes beyond what can be achieved by each excitation mechanism individually, resulting in enhanced output powers, a key figures of merit for device performance. The system response can be coherently quantified as a function of the total injected spin current density. The experimental data shows an excellent consistency with this simple model and a critical spin current density of 4.52 ± 0.18 × 109ħ/2 e−1 Am−2. Spin torque nano-oscillators are important candidates for several device applications. The authors demonstrate that the combination of two excitation methods, spin-polarised tunnelling current and pure spin Hall current, allows them to achieve greater injected spin current densities and power output than by each individual mechanism. [ABSTRACT FROM AUTHOR]

We present theoretical studies of the intrinsic spin-orbit torque (SOT) in a single-domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the nonequilibrium Green's function formalism for a tight-binding Hamiltonian. We find that, in the case of a small electric field, the intrinsic SOT to first order in SOC has only the field-like torque symmetry and can be interpreted as the longitudinal spin current induced by the charge current and Rashba field. We analyze the results in terms of the material-related parameters of the electronic structure, such as the band filling, bandwidth, exchange splitting, and the Rashba SOC strength. On the basis of these numerical and analytical results, we discuss the magnitude and sign of SOT. Our results suggest that the different sign of SOT in identical ferromagnets with different supporting layers, e.g., Co/Pt and Co/Ta, can be attributed to electrostatic doping of the ferromagnetic layer by the support. [ABSTRACT FROM AUTHOR]

Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from + 100% to −100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics. [ABSTRACT FROM AUTHOR]

Several rocksalt Sr4X3N (X = O, S, Se, and Te) are predicted to be potential half-metallic ferromagnets free of transition-metal and rare-earth elements by performing the first-principles calculations. Then their magnetic properties, such as the half metallicity and the crystal-cell magnetic moments are investigated. The Sr4X3N possibly have higher Curie temperatures and have more stable half metallicity than the Sr4X3C. Their crystal-cell magnetic moments are all 1.00 uB. The crystal-cell magnetic moments and the half metallicity arise mainly from the N ions. The main mechanism is the strong covalent interaction leading to the sp2 hybridized orbitals in the Sr4X3N. Then two Sr-5s and three N-2p electrons enter into three sp2 hybridized orbitals. Among these five electrons, four electrons are paired and one is unpaired, so there are three spin-up electrons and two spin-down electrons in these sp2 hybridized orbitals. [ABSTRACT FROM AUTHOR]