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We present studies of magnetotransport properties of Ge 1− x − y Pb x Mn y Te bulk crystals with chemical composition changing from 0.180 x y T SG around 90 K. The presence of strong anomalous Hall effect (AHE) with hysteresis is observed at T T SG . The data analysis allowed calculation of a correction to the Hall constant R H for T T SG and the AHE constant, R S . R S is around 10 −6 m 3 /C. R S and R H do not change strongly with temperature. The scaling law analysis has proved that the AHE in this system is due to the extrinsic mechanisms dominated by the skew scattering with relatively small contribution of the side jump process. Strong localization occurs in our system at T T SG and causes a presence of a minimum in the resistivity vs. temperature dependence. The magnetoresistance of our samples shows complex behavior at T T SG . The negative magnetoresistance is observed at T T nearly linear positive magnetoresistance is observed at temperatures from 20 K up to T ≈ T SG , where it reaches maximum. Positive linear magnetoresistance is related to the granular nature of our samples while the maximum near T SG is related to the giant spin-splitting of the valence band.

We present studies of magnetic properties of Ge 1− x − y Pb x Mn y Te bulk crystals with chemical composition varying in the range of 0.180 x y J pd , having values from 0.47 eV to 0.80 eV gives spin-glass transition temperature, T SG , values close to the experimental values for the Ge-rich phase. The magnetic order observed for the Pb-rich phase is also due to the carrier mediated magnetic interaction. The experimental transition temperatures are fitted with J pd value ranging from 0.22 eV to 0.28 eV.

We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge/1-x-y/Cr/x/Eu/y/Te samples with chemical composition varying in the range of 0.015 < x < 0.057 and 0.003 < y < 0.042. The ferromagnetic transition at temperatures 50 < T < 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field H/C/ = 5?63 mT and the saturation magnetization M/S/ 2?6 emu/g are found to strongly depend on the chemical composition of the alloy., 4 pages, 4 figures

In some IV-VI semimagnetic semiconductors, the RKKY interaction can dominate over the standard d-d superexchange and become the driving mechanism for ion-ion coupling. In effect, for low hole concentrations the Mn ion system is in a paramagnetic phase, whereas for higher ones it reveals typical ferromagnetic behavior. In this paper, recent work on IV-VI ferromagnetic (SnMnTe, PbSnMnTe and GeMnTe) systems will be presented. In particular, the influence of the presence of two types of magnetic ions (transition metal: Mn and rare earth metal: Eu or Er) incorporated into a semiconductor matrix on magnetic properties of resultant semimagnetic semiconductor will be described.

Magnetic and transport properties of ferromagnetic semiconductors (FMSs) near the ferromagnetic-paramagnetic phase transition were studied in two classes of FMSs: in the III–V-based In1−xMnxSb and Ga1−xMnxAs epitaxial films and in IV–VI-based Sn1−xMnxTe and Sn1−x−yMnxEryTe alloys in bulk crystal form. Magnetoresistance data for both FMS classes are in excellent agreement with the theory of Majumdar and Littlewood, indicating that near the Curie temperature, magnetic fluctuations play a key role as scattering centers. These results also show that the Majumdar–Littlewood model can be applied to magnetically very dilute systems.