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A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes' mobilities are both 5000 cm2V−1s−1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band's sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics. Ferromagnetic systems rarely display a large or non-saturating magnetoresistance, due to the low Fermi velocity of the predominant charge carrier. Here, the authors show that MnBi, a ferromagnet, bucks this trend, showing both large and non-saturating magnetoresistance, and high charge carrier motilities. [ABSTRACT FROM AUTHOR]

The Berry phase understanding of electronic properties has attracted special interest in condensed matter physics, leading to phenomena such as the anomalous Hall effect and the topological Hall effect. A non-vanishing Berry phase, induced in momentum space by the band structure or in real space by a non-coplanar spin structure, is the origin of both effects. Here, we report a sign conversion of the anomalous Hall effect and a large topological Hall effect in (Cr0.9B0.1)Te single crystals. The spin reorientation from an easy-axis structure at high temperature to an easy-cone structure below 140 K leads to conversion of the Berry curvature, which influences both, anomalous and topological, Hall effects in the presence of an applied magnetic field and current. We compare and summarize the topological Hall effect in four categories with different mechanisms and have a discussion into the possible artificial fake effect of the topological Hall effect in polycrystalline samples, which provides a deep understanding of the relation between the spin structure and Hall properties. [ABSTRACT FROM AUTHOR]

Heusler compounds are a remarkable class of materials with more than 1000 members and a wide range of extraordinary multi-functionalities including halfmetallic high-temperature ferri- and ferromagnets, multi-ferroics, shape memory alloys, and tunable topological insulators with a high potential for spintronics, energy technologies, and magneto-caloric applications. The tunability of this class of materials is exceptional and nearly every functionality can be designed. Co2-Heusler compounds show high spin polarization in tunnel junction devices and spin-resolved photoemission. Manganese-rich Heusler compounds attract much interest in the context of spin transfer torque, spin Hall effect, and rare earth free hard magnets. Most Mn2-Heusler compounds crystallize in the inverse structure and are characterized by antiparallel coupling of magnetic moments on Mn atoms; the ferrimagnetic order and the lack of inversion symmetry lead to the emergence of new properties that are absent in ferromagnetic centrosymmetric Heusler structures, such as non-collinear magnetism, topological Hall effect, and skyrmions. Tetragonal Heusler compounds with large magneto crystalline anisotropy can be easily designed by positioning the Fermi energy at the van Hove singularity in one of the spin channels. Here, we give a comprehensive overview and a prospective on the magnetic properties of Heusler materials [ABSTRACT FROM AUTHOR]

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn2CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2µB. Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn2CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general. [ABSTRACT FROM AUTHOR]

Spintronic is a multidisciplinary field and a new research area. New materials must be found for satisfying the different types of demands. The search for stable half-metallic ferromagnets and ferromagnetic semiconductors with Curie temperatures higher than room temperature is still a challenge for solid state scientists. A general understanding of how structures are related to properties is a necessary prerequisite for material design. Computational simulations are an important tool for a rational design of new materials. The new developments in this new field are reported from the point of view of material scientists. The development of magnetic Heusler compounds specifically designed as material for spintronic applications has made tremendous progress in the very recent past. Heusler compounds can be made as half-metals, showing a high spin polarization of the conduction electrons of up to 100% in magnetic tunnel junctions. High Curie temperatures were found in Co2-based Heusler compounds with values up to 1120K in Co2FeSi. The latest results at the time of writing are a tunnelling magnet resistance (TMR) device made from the Co2FeAl0.5Si0.5 Heusler compound and working at room temperature with a (TMR) effect higher than 200%. Good interfaces and a well-ordered compound are the precondition to realize the predicted half-metallic properties. The series Co2FeAl1-x Six is found to exhibit half-metallic ferromagnetism over a broad range, and it is shown that electron doping stabilizes the gap in the minority states for x = 0.5. This might be a reason for the exceptional temperature behaviour of Co2FeAl0.5Si0.5 TMR devices. Using x-ray diffraction (XRD), it was shown conclusively that Co2FeAl crystallizes in the B2 structure whereas Co2FeSi crystallizes in the L21 structure. For the compounds Co2FeGa or Co2FeGe, with Curie temperatures expected higher than 1000 K, the standard XRD technique using laboratory sources cannot be used to easily distinguish between the two structures. For this reason, the EXAFS technique was used to elucidate the structure of these two compounds. Analysis of the data indicated that both compounds crystallize in the L21 structure which makes these two compounds suitable new candidates as materials in magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

This work reports on the magnetostructural properties of Co2-xFe1+xSi with 02FeSi is a half-metallic ferromagnet with high Curie temperature and was suggested as candidate for a high tunneling magnetoresistance. Changing the Fe content allows to tune its magnetic properties. It is demonstrated that the solid solution series Co2-xFe1+xSi is perfectly ordered. 57Fe Mössbauer spectroscopy was used to determine the local hyperfine magnetic fields of the Fe atoms. Two different hyperfine magnetic fields are detected in samples with x>0. Changes in the relative intensities indicate the well ordered substitution of Co by Fe atoms [ABSTRACT FROM AUTHOR]

Co2Mn1-xFexSi Heusler alloys crystallize in the L21 structure. This structure type requires random distribution of Mn and Fe in case of the mixed alloys. The spin echo nuclear magnetic resonance (NMR) technique probes the direct local environments of the active atoms and is thus able to resolve next neighboring shells providing a unique tool to verify the random distribution of Mn and Fe in Co2Mn1-xFexSi. Exemplarily, the half-metallic quaternary Heusler alloy Co2Mn0.5Fe0.5Si was investigated by means of NMR. The 55Mn NMR measurements unambiguously demonstrate the random distribution of Mn and Fe on the 4b Wyckoff position in Co2Mn0.5Fe0.5Si. [ABSTRACT FROM AUTHOR]

Diluted magnetic semiconductors were prepared by substituting titanium in the semiconducting compound CoTiSb with iron. The structural, electronic, and magnetic properties of the pure and doped materials were investigated. It was found that substitution of up to 10% Ti by Fe does not affect the crystalline structure. Self-consistent calculations of the electronic structure predict the material to be a half-metallic ferromagnet. The Curie temperature of the Fe substituted alloy is far above room temperature (>700 K), thus making that material a serious candidate for future electronic applications, in particular, for magnetoelectronics and spintronics. [ABSTRACT FROM AUTHOR]

This work reports on structural and magnetic investigations of the Heusler compound Co2FeSi. X-ray diffraction and Mößbauer spectrometry indicate an ordered L21 structure. Magnetic measurements by means of x-ray magnetic circular dichroism and magnetometry revealed that this compound is, currently, the material with the highest magnetic moment (6μB) and Curie temperature (1100 K) in the classes of Heusler compounds as well as half-metallic ferromagnets. [ABSTRACT FROM AUTHOR]

This work reports on three quaternary Heusler compounds NiFeMnGa, NiCoMnGa, and CuCoMnGa. In contrast to their ternary relatives, quaternary Heusler compounds are still rarely investigated. A very large pool of interesting materials lies thus idle waiting for exploration. The difficulty consists in choosing prospective compositions, and trial and error is elaborate and expensive. We have identified several candidates employing ab initioelectronic-structure calculations. The compounds were synthesized, and the structural and magnetic properties were investigated experimentally. CuCoMnGa is a quaternary Heusler compound; NiFeMnGa and NiCoMnGa are unreported half-metallic ferromagnetic materials with potential for spintronics applications. [ABSTRACT FROM AUTHOR]

Abstract: Electronic structure calculation were used to predict a new material for spintronic applications. is one example which is stable against on-site correlation and disorder effects due to the position of the Fermi energy in the middle of the minority band gap. Experimentally the sample were made exhibiting structure and a high magnetic order. [Copyright &y& Elsevier]

The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off- stoichiometric Co2MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co2Mn1.29Si. In this paper, we explain the behaviorof the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co2MnSi and Mn2CoSi are theoretically predicted to be half-metallic ferromagnets. [ABSTRACT FROM AUTHOR]

Abstract: In this article the Co2 based Heusler compounds are discussed as potential materials for spin voltage generation. The compounds were synthesized by arc melting and consequent annealing. Band structure calculations were performed which revealed the compounds to be half-metallic ferromagnets. Magnetometry was performed on the samples and the Curie temperatures and the magnetic moments were determined. The Seebeck coefficients were measured from low to ambient temperatures for all compounds. For selected compounds high temperature measurements up to 900 K were performed. [Copyright &y& Elsevier]

Review: 61 refs. [ABSTRACT FROM AUTHOR]