1. Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures.
- Author
-
Wolski, S., Szczepański, T., Dugaev, V. K., Barnaś, J., Landgraf, B., Slobodskyy, T., and Hansen, W.
- Subjects
SPINTRONICS ,FERROMAGNETIC resonance ,FERROMAGNETIC materials ,SPIN polarization ,SEMICONDUCTOR diodes - Abstract
We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF