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Moiré superlattices in two-dimensional stacks have attracted worldwide interest due to their unique electronic properties. A typical example is the moiré ferroelectricity, where adjacent moirés exhibit opposite spontaneous polarization that can be switched through interlayer sliding. However, in contrast to ideal regular ferroelectric moiré domains (equilateral triangles) built in most theoretical models, the unavoidable irregular moiré supercells (non-equilateral triangles) induced by external strain fields during the transfer process have been given less attention. Manipulation of controllable polarization evolutions is also a big challenge due to an interlinked network of polarized domains. In this study, we employ a sliding-disturb measurement to examine and modulate these irregular moirés via mechanical force. By introducing a curved substrate, the irregular moirés are fabricated, and three distinct types of moiré domains with different patterns are identified and modulated by external mechanical force disturbing. They exhibit reduced pinning forces when the shear direction is not aligned with the strain direction. The shift of the moirés is observed to be orthogonal to the shear direction. This work offers an effective pathway for the controlled switch of the polarization in interfacial ferroelectricity. Manipulation of controllable polarization evolutions is a big challenge. The authors fabricate the irregular moirés, identifying three distinct types of moiré domains with different patterns, modulating them by external mechanical force disturbing. [ABSTRACT FROM AUTHOR]

Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance. In this review, recent progress in the discovery and design of 2D ferroelectric materials is discussed, focusing on their properties, underlying mechanisms, and applications. Based on the work discussed in this review, we look ahead to theoretical prediction for 2D ferroelectric materials and their potential applications, such as the application in nonlinear optics. The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies. [ABSTRACT FROM AUTHOR]

Electric polarization typically originates from non-centrosymmetric charge distributions in compounds. In elemental crystalline materials, chemical bonds between atoms of the same element favor symmetrically distributed electron charges and centrosymmetric structures, making elemental ferroelectrics rare. Compared to atoms, elemental clusters are intrinsically less symmetric and can have various preferred orientations when they are assembled to form crystals. Consequently, the assembly of clusters with different orientations tends to break the inversion symmetry. By exploiting this concept, we show that sliding ferroelectricity naturally emerges in trilayer quasi-hexagonal phase (qHP) C60, a cluster-assembled carbon allotrope recently synthesized. Compared to many metallic or semi-metallic elemental ferroelectrics, trilayer qHP C60's have sizable band gaps and several ferroelectric structures, which are distinguishable by measuring their second-harmonic generation (SHG) responses. Some of these phases show both switchable out-of-plane and in-plane polarizations on the order of 0.2 pC/m. The out-of-plane and in-plane polarizations can be switched independently and enable an easy-to-implement construction of Van der Waals homostructures with ferroelectrically switchable chirality. [ABSTRACT FROM AUTHOR]

The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using Hf0.5Zr0.5O2 (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO2‐based ferroelectrics, and establishes the design paradigm for the future evolution of HfO2‐based multifunctional electronic devices. [ABSTRACT FROM AUTHOR]

A synergistic realization of high electrocaloric effect (ECE) and excellent temperature stability in ferroelectrics are foundation for practical applications, which is, however, a major challenge in ferroelectric cooling community thus far. In confront with this long‐standing issue, an emergent monomorphic ferrodistortion strategy in NaNbO3‐based relaxor is proposed with flexible tetragonal polar nanoregions immersing in short‐range oxygen octahedral tilt. This not only contributes to large quantities of polar entities to increase entropy change but also produces highly robust oxygen octahedral tilt to persist ferroelectricity and obstruct thermal agitations. Therefore, a high ΔT of 0.96 K and an ultrawide temperature span ΔTspan of 110 K with a record‐high figure of merit of 4.74 is achieved in Ta‐doped NaNbO3‐BaTiO3 ceramics and these superior EC performances present a remarkable breakthrough in ferroelectric bulks cooling. This work thus provides an innovative way of utilizing ferrodistortive relaxor feature with polar nanoregions immersing in oxygen octahedral tilt to simultaneously boost EC value and temperature stability and thus monomorphic ferrodistortion is proposed as an effective strategy to develop high‐performance entropy‐change materials. [ABSTRACT FROM AUTHOR]

Pb-based perovskites play pivotal roles in ferroelectric research. In the search for new Pb-based ferroelectrics, we investigated the ferroelectric properties of Dion–Jacobson type CsPb2Nb3O10 and exfoliated 2D nanosheets. Ferroelectricity in CsPb2Nb3O10 was demonstrated for the first time. CsPb2Nb3O10 adopted a polar tetragonal structure with a modest TC = 260 °C and polarization PS = 7.93 μC cm−2; the polarization mainly arose from the out-of-plane displacements of Nb5+ ions and nearby oxygens. CsPb2Nb3O10 layered perovskite offers additional advantages for tailoring ferroelectric nanomaterials, as exfoliated 2D nanosheets provide novel platforms for investigating ferroelectric properties down to the 2D limit. Piezoresponse force microscopy confirmed stable ferroelectricity even in exfoliated 2D Pb2Nb3O10 nanosheets. [ABSTRACT FROM AUTHOR]

Ferroelectric (FE)‐antiferromagnetic (AFM) multiferroic materials have sparked growing interest due to their huge possibilities in energy‐saving, photoelectric devices, nonvolatile storage, and switches. However, realizing FE‐AFM properties in a hybrid molecular material is difficult because ferroelectric and magnetic orders are commonly mutually exclusive. Here, we report an FE‐AFM multiferroic semiconductor [NH4(18‐crown‐6)]2[Mn(SCN)4] (NCMS) by supramolecular assembly approach via molecular rotor synthon [NH4(18‐crown‐6)] and inorganic magnetic module [Mn(SCN)4]. Interestingly, NCMS shows good ferroelectricity with a spontaneous polarization (Ps) of 5.94 μC cm−2 higher than most crown‐ether‐based ferroelectrics. Especially, the realization of antiferromagnetism is for the first time in the crown ether hybrid perovskite ferroic systems. Additionally, semiconductor NCMS displays an X‐ray radiation detection response with a large photo/dark current on‐off ratio (197). Our study not only gives a deep insight into understanding multiferroic properties but also provides a novel and efficient approach to realizing high‐performance hybrid multiferroic materials. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) ferroelectrics and multiferroics have attracted considerable scientific and technological interest in recent years due to the increasing demands for miniaturization and low energy consumption of electronic devices. At present, the research on 2D ferroelectrics and multiferroics is still focused on van der Waals materials, while the known bulk ferroelectric and multiferroic materials are mostly found in perovskite systems. The ability to prepare and transfer 2D perovskite oxides has provided unprecedented opportunities for developing ferroelectrics and multiferroics based on 2D perovskites. In this Perspective, we review the research progress on 2D ferroelectrics and multiferroics in inorganic perovskites in terms of different ferroelectric and magnetoelectric coupling mechanisms. The improper ferroelectricity and novel magnetoelectric coupling mechanisms discovered in 2D perovskites are emphasized, and then, the main challenges and future development direction are put forward. [ABSTRACT FROM AUTHOR]

Conventional photodetectors overly pursue high light‐to‐electric conversion efficiency under weak light stimulation, while disregarding the saturated absorption‐induced blinding effect upon strong light, and achieving efficient photodetection covering a large power range remains a great challenge. In this work, MoS2/BaTiO3 heterostructures are constructed through a low‐cost exfoliation and transfer method combined with spin‐coating. The photoresponse behaviors before and after assembling the BaTiO3 nanoparticles onto the MoS2 nanoflake are investigated, indicating that the high conductivity of MoS2 and ferroelectricity of BaTiO3 can complement each other to improve the photoresponse of the hetero‐integrated device, acquiring a high photoresponsivity of 17402 A W−1 under 0.2 nW irradiation, and a significant 570 µA photocurrent under 8 mW irradiation, realizing a large linear dynamic range index of 152 dB, which is at the top level among layered semiconductor‐based detectors. Moreover, strong power near‐infrared light can be up‐converted to the visible band through the nonlinear effect of BaTiO3, subsequently absorbed by the MoS2 and contributing to the photocurrent, providing a solution to combat and alleviate the saturated absorption issue in photodetection. This work marks a significant advancement in achieving robust high‐performance photodetection by hetero‐integrating 2D materials with ferroelectrics. [ABSTRACT FROM AUTHOR]

Diverse domain patterns significantly influence the nonlinear electromechanical behaviors of ferroelectric nanomaterials, with polarization switching under strong electric fields being inherently a frequency-dependent phenomenon. Nevertheless, research in this area remains limited. In this study, we present a phase-field investigation of frequency-dependent electromechanical dynamics of a polycrystalline BaTiO3 nanofilm with a core-shell structure, subjected to applied frequencies ranging from 1 to 80 kHz. Our findings elucidate the microstructural mechanisms underlying the electromechanical behaviors observed in these materials. The effect of the grain size and the strains effect are also taken into account. Hysteresis and butterfly loops exhibit a marked change in shape as the frequency changes. We discuss the underlying domain-switching dynamics as a basis for evaluating such frequency-dependent properties. In addition, we examine the scaling behaviors of the dynamic hysteresis and the influence of grain boundaries on the domain structure. We can also observe from hysteresis loops that the remnant polarization and coercive field significantly diminish when grain sizes decrease from 60 to 5 nm. A smaller grain size of the nanofilm yields a larger percentage of the dielectric grain boundary, which "dilutes" the overall ferroelectricity of the film. A vortex domain structure is more likely to form at low frequency and a small grain size. [ABSTRACT FROM AUTHOR]

Metal halide perovskite ferroelectrics combining spontaneous polarization and excellent semiconducting properties is an ideal platform for enabling self‐driven X‐ray detection. However, achievements to date have been only based on uniaxiality, which increases the complexity of device fabrication. Multi‐axial ferroelectric materials have multiple equivalent polarization directions, making them potentially amenable to multi‐axial self‐driven X‐ray detection, but the report on these types of materials is still a huge blank. Herein, a high‐quality (BA)2(EA)2Pb3I10 (1) biaxial ferroelectric single crystal was successfully grown, which exhibited significant spontaneous polarization along the c‐axis and b‐axis. Under X‐ray irradiation, bulk photovoltaic effect (BPVE) was exhibited along both the c‐axis and b‐axis, with open circuit voltages (Voc) of 0.23 V and 0.22 V, respectively. Then, the BPVE revealed along the inversion of polarized direction with the polarized electric fields. Intriguingly, due to the BPVE of 1, 1 achieved multi‐axial self‐driven X‐ray detection for the first time (c‐axis and b‐axis) with relatively high sensitivities and ultralow detection limits (17.2 nGyair s−1 and 19.4 nGyair s−1, respectively). This work provides a reference for the subsequent use of multi‐axial ferroelectricity for multi‐axial self‐driven optoelectronic detection. [ABSTRACT FROM AUTHOR]

The bulk photovoltaic effect (BPVE) in ferroelectrics, wherein spontaneous polarization can be reversed within crystals lacking centrosymmetry, encompasses the significant contribution of ferroelectric domain walls (DWs), known as DW‐PVE. Nevertheless, the separation between intrinsic BPVE within the domain and DW‐PVE remains unexplored in 2D ferroelectrics, notwithstanding its significant importance. In this study, sizable crystals of 2D ferroelectric SnS are successfully grown, facilitating a comprehensive yet intricate examination of domain configurations utilizing polarized optical microscopy and piezoresponse force microscopy. By properly selecting the large ferroelectric single domain within SnS crystals, uniform intrinsic BPVE across the domain is unequivocally demonstrated. Furthermore, to further enhance intrinsic BPVE, manipulation of strain poling increased photocurrent, suggesting that locally distributed polarizations due to imperfection introduced in SnS crystals are aligned by strain. These results will offer a new avenue for rigorous comprehension of DW‐PVE in 2D ferroelectrics. [ABSTRACT FROM AUTHOR]

The excellent complementary metal-oxide-semiconductor compatibility and rich physicochemical properties of hafnia-based materials, in particular the unique ferroelectricity that surpasses of conventional ferroelectrics, make hafnia-based devices promising candidates for industrial applications. This Perspective examines the fundamental properties of hafnia-based materials relevant to neuromorphic devices, including their dielectric, ferroelectric, antiferroelectric properties, and the associated ultra-high oxygen-ion conductivity. It also reviews neuromorphic devices developed leveraging these properties, such as resistive random-access memories, ferroelectric random-access memories, ferroelectric tunnel junctions, and (anti)ferroelectric field-effect transistors. We also discuss the potential of these devices for mimicking synaptic and neuronal functions and address the challenges and future research directions. Hafnia-based neuromorphic devices promise breakthrough performance improvements through material optimization, such as crystallization engineering and innovative device configuration designs, paving the way for advanced artificial intelligence systems. [ABSTRACT FROM AUTHOR]

HfO2‐based ferroelectrics offer promises for next‐generation nonvolatile nanoscale devices owing to excellent CMOS compatibility and robust ferroelectricity at the nanoscale. However, fundamentally understanding the mechanism of polarization reversal and domain dynamics is challenging because the role of the spacer layer at the domain level in HfO2‐based ferroelectrics remains elusive. Here, it is realized that visualization of time‐resolved dynamics of nanoscale domain configurations in the epitaxial Hf0.5Zr0.5O2 thin films using phase‐field simulations. Scale‐free domain independent switchability (namely, irreducible stable polar domain down to 1 nm lateral size) and sharp domain walls that originate from weak interactions between adjacent domains characterized by the reduced gradient energy coefficient, which unravels the mesoscale mechanism of spacer layer in domain dynamics are demonstrated. Meanwhile, it is revealed that 180° polarization switching is dominated by the nucleation of a new domain with a high nucleation density, well described by the nucleation‐limited switching model. This study not only provides a fundamental mesoscale mechanism of the spacer layer, but also stimulates further studies on the manipulation of ultra‐scaled single domain state for designing high‐density and fast‐speed HfO2‐based ferroelectric memory. [ABSTRACT FROM AUTHOR]

Carborane compounds, known for their exceptional thermal stability and non‐toxic attributes, have garnered widespread utility in medicine, supramolecular design, coordination/organometallic chemistry, and others. Although there is considerable interest among chemists, the integration of suitable carborane molecules into ferroelectric materials remains a formidable challenge. In this study, we employ the quasi‐spherical design strategy to introduce functional groups at the boron vertices of the o‐carborane cage, aiming to reduce molecular symmetry. This approach led to the successful synthesis of the pioneering ferroelectric crystals composed of cage‐like carboranes: 9‐OH‐o‐carborane (1) and 9‐SH‐o‐carborane (2), which undergo above‐room ferroelectric phase transitions (Tc) at approximately 367 K and 347 K. Interestingly, 1 and 2 represent uniaxial and multiaxial ferroelectrics respectively, with 2 exhibiting six polar axes and as many as twelve equivalent polarization directions. As the pioneering instance of carborane ferroelectric crystals, this study introduces a novel structural archetype for molecular ferroelectrics, thereby providing fresh insights into the exploration of molecular ferroelectric crystals with promising applications. [ABSTRACT FROM AUTHOR]

The discovery of polar metals challenges long‐standing assumptions about the incompatibility between polar order and metallicity. However, despite recent progress, the mechanism allowing the coexistence of these supposedly forbidden properties remains unclear. Herein, carriers are introduced by constructing a symmetric polar/nonpolar interface in the KNbO3/BaTiO3 (KNO/BTO) superlattice (SL), enabling the coexistence of ferroelectric and metallic properties. A first‐principles analysis of the evolution of polar distortion and metallicity in the KNO/BTO SL under biaxial strain in the face to explore the dependence of the two at the microscopic level is performed. It is found that compressive strain enhances polarization distortion while reducing conductivity from three dimensions to two dimensions, indicating a weak coupling mechanism between carriers and polarization. Furthermore, it is shown that the presence of holes strengthens the TiO (NbO) covalent bonds, resulting in an unexpected enhancement of the polarization properties of the KNO/BTO SL. Therefore, it is proposed using the carrier screening effect and covalent bonding synergies as a framework for understanding the interaction between ferroelectricity and free carriers, rather than just a single factor therein. These results provide new theoretical insights for designing robust polar metals in perovskite ferroelectrics. [ABSTRACT FROM AUTHOR]

While ferroelectric hafnia (HfO2) has become a technically important material for microelectronics, the physical origin of its ferroelectricity remains poorly understood. The tetragonal P 4 2 / nmc phase is commonly assigned as its paraelectric mother phase but has no soft mode at the Brillouin zone center. In this work, we propose that the paraelectric—ferroelectric transition in the fluorite-type Pca21 ferroelectric family can be described by a Pcca — Pca 2 1 transition, where the Pcca mother phase will evolve into either the Pca 2 1 ferroelectric phase or the centrosymmetric P 2 1 / c monoclinic phase, depending on the strain conditions. The Pcca phase is directly linked to both phases in the context of continuous phase transition. Hafnia is regarded as a special case of this family in that it has accidental atomic degeneracy because all anions are oxygen. The theory is also correlated with the seven-coordination theory that explains the ferroelectricity in hafnia from a chemical perspective. In addition, the strain conditions to promote the ferroelectric phase in hafnia are discussed. [ABSTRACT FROM AUTHOR]

They found that metal contacts can facilitate the stabilization of the ferroelectric phase, enabling aggressive scaling of 2D ferroelectrics.[13] As a recently discovered vdW ferroelectric, -In SB 2 sb Se SB 3 sb exhibits inter-correlated in-plane and out-of-plane polarization.[[17]] Unlike traditional ferroelectric materials, which are usually insulators, -In SB 2 sb Se SB 3 sb is a semiconductor with a band gap of 1.36 eV (bulk). In recent years, a range of two-dimensional (2D) layered materials have been experimentally confirmed or theoretically predicted to be piezoelectric, pyroelectric, or ferroelectric.[[1], [3], [5], [7], [9]] Compared to their bulk counterparts, 2D piezoelectric, pyroelectric, and ferroelectric materials exhibit many intriguing properties, such as excellent size scaling, tunable bandgap, negative piezoelectric coefficient, and high mechanical flexibility.[[1], [3], [5], [7], [9]] Furthermore, the stackable nature of 2D layered materials makes them promising building blocks for designing functional heterostructures, where the 2D layers can be integrated with conventional piezoelectric, pyroelectric, and ferroelectric oxides and polymers. Piezoelectric, pyroelectric, and ferroelectric materials have attracted tremendous attention owing to their potential applications in nonvolatile memories, logic devices, photodetectors, sensors, actuators, transducers, and energy harvesting devices. 10.1063/5.0116445 40 X. Hong, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, "High mobility few layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides", Phys. [Extracted from the article]

Over the past years, the application potential of ferroelectric nanomaterials with unique physical properties for modern electronics is highlighted to a large extent. However, it is relatively challenging to fabricate inorganic ferroelectric nanomaterials, which is a process depending on a vacuum atmosphere at high temperatures. As significant complements to inorganic ferroelectric nanomaterials, the nanomaterials of molecular ferroelectrics are rarely reported. Here a low‐cost room‐temperature antisolvent method is used to synthesize free‐standing 2D organic–inorganic hybrid perovskite (OIHP) ferroelectric nanosheets (NSs), that is, (CHA)2PbBr4 NSs (CHA = cyclohexylammonium), with an average lateral size of 357.59 nm and a thickness ranging from 10 to 70 nm. This method shows high repeatability and produces NSs with excellent crystallinity. Moreover, ferroelectric domains in single NSs can be clearly visualized and manipulated using piezoresponse force microscopy (PFM). The domain switching and PFM‐switching spectroscopy indicate the robust in‐plane ferroelectricity of the NSs. This work not only introduces a feasible, low‐cost, and scalable method for preparing molecular ferroelectric NSs but also promotes the research on molecular ferroelectric nanomaterials. [ABSTRACT FROM AUTHOR]

Numerous hybrid improper ferroelectrics have been discovered in bulk oxides with layered perovskite structures. In contrast, the competition between the interlayer rumpling and oxygen octahedral rotation suppresses the ferroelectricity in layered perovskite material with trivalent cation at the B-site. In the present work, single-phase dense La2Sr(Sc1−xFex)2O7 ceramics with double-layered Ruddlesden–Popper structures have been prepared, and room-temperature ferroelectricity is discovered in the ceramics with x ≤ 0.10. The ferroelectric polarization and coercive field decrease with increasing content of Fe3+ cations, consistent with the decline of oxygen octahedral rotation and tilting angles. Although the linear relationship between the Curie temperature and the tolerance factor for La2Sr(Sc1−xFex)2O7 ceramics is established, the line is far away from that for A2+3B4+2O7 ceramics due to the large interlayer rumpling in the present ceramics. Although no single-phase multiferroic has been discovered in this work, an effective way to introduce magnetism into hybrid improper ferroelectric is provided. [ABSTRACT FROM AUTHOR]

The changes in the crystal structure and ferroelectric properties of (Al0.8Sc0.2)N films sandwiched between Pt and TiN electrodes were investigated by subjecting the films to post-heat-treatment at various temperatures up to 600 °C in both H2 and Ar gases. The remanent polarization underwent slight change, whereas the coercive field strengthened by approximately 9% as a result of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change is much smaller than that reported for ferroelectric (Hf,Zr)O2 films as well as for Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 °C and is almost independent of the Pt and TiN electrodes. The high stability of (Al,Sc)N films with both Pt and TiN electrodes under H2 atmosphere is highly promising to stabilize the properties through the device fabrication process. [ABSTRACT FROM AUTHOR]

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity. [ABSTRACT FROM AUTHOR]

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology. [ABSTRACT FROM AUTHOR]

Nano ferroelectrics holds the potential application promise in information storage, electro-mechanical transformation, and novel catalysts but encounters a huge challenge of size limitation and manufacture complexity on the creation of long-range ferroelectric ordering. Herein, as an incipient ferroelectric, nanosized SrTiO3 was indued with polarized ordering at room temperature from the nonpolar cubic structure, driven by the intrinsic three-dimensional (3D) tensile strain. The ferroelectric behavior can be confirmed by piezoelectric force microscopy and the ferroelectric TO1 soft mode was verified with the temperature stability to 500 K. Its structural origin comes from the off-center shift of Ti atom to oxygen octahedron and forms the ultrafine head-to-tail connected 90° nanodomains about 2 to 3 nm, resulting in an overall spontaneous polarization toward the short edges of nanoparticles. According to the density functional theory calculations and phase-field simulations, the 3D strain-related dipole displacement transformed from [001] to [111] and segmentation effect on the ferroelectric domain were further proved. The topological ferroelectric order induced by intrinsic 3D tensile strain shows a unique approach to get over the nanosized limitation in nanodevices and construct the strong strain-polarization coupling, paving the way for the design of high-performance and free-assembled ferroelectric devices. [ABSTRACT FROM AUTHOR]

Nano ferroelectrics holds the potential application promise in information storage, electro-mechanical transformation, and novel catalysts but encounters a huge challenge of size limitation and manufacture complexity on the creation of long-range ferroelectric ordering. Herein, as an incipient ferroelectric, nanosized SrTiO3 was indued with polarized ordering at room temperature from the nonpolar cubic structure, driven by the intrinsic three-dimensional (3D) tensile strain. The ferroelectric behavior can be confirmed by piezoelectric force microscopy and the ferroelectric TO1 soft mode was verified with the temperature stability to 500 K. Its structural origin comes from the off-center shift of Ti atom to oxygen octahedron and forms the ultrafine head-to-tail connected 90° nanodomains about 2 to 3 nm, resulting in an overall spontaneous polarization toward the short edges of nanoparticles. According to the density functional theory calculations and phase-field simulations, the 3D strain-related dipole displacement transformed from [001] to [111] and segmentation effect on the ferroelectric domain were further proved. The topological ferroelectric order induced by intrinsic 3D tensile strain shows a unique approach to get over the nanosized limitation in nanodevices and construct the strong strain-polarization coupling, paving the way for the design of high-performance and free-assembled ferroelectric devices. [ABSTRACT FROM AUTHOR]

Ferroelectricity, which has diverse important applications such as memory elements, capacitors, and sensors, was first discovered in a molecular compound, Rochelle salt, in 1920 by Valasek. Owing to their superiorities of lightweight, biocompatibility, structural tunability, mechanical flexibility, etc., the past decade has witnessed the renaissance of molecular ferroelectrics as promising complementary materials to commercial inorganic ferroelectrics. Thus, on the 100th anniversary of ferroelectricity, it is an opportune time to look into the future, specifically into how to push the boundaries of material design in molecular ferroelectric systems and finally overcome the hurdles to their commercialization. Herein, we present a comprehensive and accessible review of the appealing development of molecular ferroelectrics over the past 10 years, with an emphasis on their structural diversity, chemical design, exceptional properties, and potential applications. We believe that it will inspire intense, combined research efforts to enrich the family of high-performance molecular ferroelectrics and attract widespread interest from physicists and chemists to better understand the structure–function relationships governing improved applied functional device engineering. [ABSTRACT FROM AUTHOR]

The energy conversion potential of ferroelectric materials originating from their phase transitions, in particular temperature ranges and electric field values, is very promising. Pyroelectric energy harvesting consists of directly converting thermal energy into electrical energy. Due to its high energy conversion potential, the Olsen cycle is the most favorable for pyroelectric energy harvesting. This cycle includes two isothermal and two constant electric field branches. In this study, the Olsen cycle was modeled, then varying temperatures and applied electric field directions for different crystal orientations were simulated. Polarization responses were obtained via the Landau–Devonshire theory. Then, an innovative way to model the electrocaloric effect was proposed; experimental results and first-principle calculations confirmed the simulation results. The resulting negative electrocaloric effect due to crystal orientation, previously reported in the literature, has been successfully simulated through a phenomenological approach. Finally, we identified which phase transitions are interesting for pyroelectric energy harvesting applications depending on crystal orientations while obtaining an energy density in the order of ≈ 10 2 mJ / cm 3. This value corresponds to previous results in the literature. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) valleytronic materials are both fundamentally intriguing and practically appealing to explore novel physics and design next-generation devices. However, traditional control means such as optic pumping or magnetic field cannot meet the demands of modern electron devices for miniaturization, low-dissipation, and non-volatility. Thus, it is attractive to combine the ferroelectric property with valley property in a single compound. In this paper, the recent progress of ferroelectric-valley coupling is reviewed. First, we briefly recall the development of valleytronics in the past several years. Then, various structures demonstrating ferroelectric-valley coupling, including heterostructures and intrinsic materials, are introduced. Subsequently, we describe ferroelectric-valley coupling in sliding and adsorption system and the unconventional ferroelectricity in the moiré system. Finally, we discuss the research status and outlook. We hope that this perspective will be helpful to bridge the gap between valleytronics and ferroelectrics in 2D materials and inspire further exciting findings. [ABSTRACT FROM AUTHOR]

Out-of-plane polarized ferroelectric materials in a capacitive structure provide a key component for several technological applications. Furthermore, two-dimensional materials are expected to aid in the quest for both ultrathin and flexible electronics. Of the various two-dimensional ferroelectrics with out-of-plane polarization, CuInP2S6 is special in that the Cu atoms are highly mobile and it has been shown to possess both low- and high-polarization states. Using density-functional-theory calculations, we explore the stabilization of the ferroelectric state for several prototypical metal contacts (Gr, Ni, Cu, Au, and Ag). In all cases, we find that the ferroelectric state can be stabilized at fewer layers than in the freestanding case. For all of the considered conventional metal contacts, we also find the existence of a quasi-ferroelectric state that stabilizes a polar phase for thicknesses greater than two layers of CIPS. In the cases of Au and Ag, interfacial alignment and strain can be used to stabilize ferroelectricity at the bilayer limit. Furthermore, we find that the strength of the interaction between the contact and CuInP2S6 also leads to stabilization of the high-polarization state when ferroelectricity is stabilized. Lastly, energy-barrier calculations show that the system is still switchable in the presence of contact doping from the metal contacts. [ABSTRACT FROM AUTHOR]

Out-of-plane polarized ferroelectric materials in a capacitive structure provide a key component for several technological applications. Furthermore, two-dimensional materials are expected to aid in the quest for both ultrathin and flexible electronics. Of the various two-dimensional ferroelectrics with out-of-plane polarization, CuInP2S6 is special in that the Cu atoms are highly mobile and it has been shown to possess both low- and high-polarization states. Using density-functional-theory calculations, we explore the stabilization of the ferroelectric state for several prototypical metal contacts (Gr, Ni, Cu, Au, and Ag). In all cases, we find that the ferroelectric state can be stabilized at fewer layers than in the freestanding case. For all of the considered conventional metal contacts, we also find the existence of a quasi-ferroelectric state that stabilizes a polar phase for thicknesses greater than two layers of CIPS. In the cases of Au and Ag, interfacial alignment and strain can be used to stabilize ferroelectricity at the bilayer limit. Furthermore, we find that the strength of the interaction between the contact and CuInP2S6 also leads to stabilization of the high-polarization state when ferroelectricity is stabilized. Lastly, energy-barrier calculations show that the system is still switchable in the presence of contact doping from the metal contacts. [ABSTRACT FROM AUTHOR]

The bulk photovoltaic effect observed in ferroelectric materials can enable photovoltaic performance beyond the Shockley–Queisser limit of efficiency. This requires the use of ferroelectrics with strong polarization and low bandgap (Eg) that are typically contradictory in the common perovskite oxides ferroelectrics. Here, we use first-principles calculations to study the KNbO3–K(Ti0.5Mo0.5)O3 (KNTM) solid solutions as possible narrow-gap ferroelectric materials. KTM, the end-member of the recently discovered KNTM solid solution system, maintains a ferroelectric polarization similar to that of other K-based systems due to its d0 configuration at the B-site. The substitution of Nb in KTM reduces Eg from 2.9 of KTM to 1.83 eV for an unstrained system and 1.7 eV for a compressively strained system, while maintaining ferroelectricity. The combination of narrow Eg, strong ferroelectricity, low toxicity, and abundance of the constituent elements make Nb-substituted KTM a promising candidate material for photoferroelectric applications. [ABSTRACT FROM AUTHOR]

As a typical lead-free antiferroelectric material, silver niobate has attracted much attention in recent years due to its excellent performance in energy storage. In this work, based on a spherical aberration–corrected STEM-high angle annular dark field technique, the sites of each cation column of pure silver niobate and Ta-doped silver niobate were quantitatively obtained. Besides conventional antiferroelectric displacements along the ±[1−10]c directions, B-site ions were found to also deviate along ±[001]c directions and form many local off-centering nanoregions, which may induce weak ferroelectricity, just like polar nanoregions in relaxed ferroelectrics. Such results will further increase our understanding of silver niobate in the microscopic view and may help explain some unsolved questions. [ABSTRACT FROM AUTHOR]

The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInP2S6 via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 μm2, equal to a density of 31.4 Gbit/in2. Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics. Flexoelectric effect may offer a voltage-free method to control the polarization in 2D ferroelectrics, but its widespread application remains challenging. Here, the authors report an approach to arbitrarily switch the ferroelectricity in 2D CuInP2S6. [ABSTRACT FROM AUTHOR]

What is the most favorite and original chemistry developed in your research group? We originally proposed the design principle for molecular ferroelectrics: ferroelectrochemistry, including quasi‐spherical theory, the introduction of homochirality, and H/F substitution. Ferroelectrochemistry changed the blind search for molecular ferroelectrics into targeted chemical design, which will develop into a new discipline. How do you get into this specific field? Could you please share some experiences with our readers? I have been devoted to the field of molecular ferroelectrics for more than 20 years. In the early stage, I worked on non‐centrosymmetric metal‐organic complexes, which are potential molecular ferroelectrics. This laid a foundation for my further study of molecular ferroelectrics. Non‐centrosymmetric crystal symmetry is only one of the necessary requirements for ferroelectrics, which must adopt one of the 10 polar crystallographic point groups and should also generally undergo symmetry‐breaking phase transitions. Due to the lack of a feasible method, the discovery of molecular ferroelectrics has long depended on blindly searching. This process is like finding a needle in a haystack. After years of exploration in this field, I fully understood the Landau phase transition phenomenological theory, Curie symmetry, and Neumann principle from a chemical perspective, and proposed the design principle for molecular ferroelectrics: ferroelectrochemistry, transforming the discovery of molecular ferroelectrics from blind search to targeted chemical design. Never give up no matter how much difficulty you have met, because maybe there is an opportunity the next second. What is the most important personality for scientific research? Curiosity, divergent thinking, perseverance, team spirit, and gratitude. How do you supervise your students? Emphasis on independent problem‐solving abilities. Encourage students to read professional books frequently while doing research. What are your hobbies? What's your favorite book(s)? Jogging, reading, and swimming. My favorite book is The Journey to the West. Comprehensive Summary: Molecular ferroelectrics have attracted tremendous attention in the past decades due to their excellent ferroelectric performance and superiorities of easy processability, mechanical flexibility, and good biocompatibility. However, the discovery of molecular ferroelectrics is a great challenge and has long relied on blind search. This situation changed recently, with the development of ferroelectrochemistry proposed by our group. As a major design approach in ferroelectrochemistry, introducing homochirality, which facilitates the crystallization of materials in polar crystallographic point groups, greatly improves the probability of being ferroelectrics. Various new molecular ferroelectrics with splendid properties have been precisely synthesized by using this efficient and universal strategy. In this review, we summarize the advances in the chemical design of molecular ferroelectrics through the strategy of introducing homochirality. Key Scientists: [ABSTRACT FROM AUTHOR]

2D ferroelectric materials have garnered extensive attention for promising applications in next‐generation electronic devices, which provides a platform to explore ferroelectricity without the critical thickness constraint of traditional perovskite oxide‐based ferroelectric materials. Recent studies have shown that chemical vapor deposition (CVD) can synthesis the large‐area 2D ferroelectric materials, making the 2D ferroelectric materials to be compatible with scalable semiconductor devices. In this Review, the CVD‐grown 2D ferroelectric materials are summarized in terms of materials, properties to devices application view. First, the synthesis strategy and recent advances of the CVD growth of 2D ferroelectric materials are highlighted in the aspects of diverse groups of 2D materials. Second, the recent experimental progress of 2D ferroelectric devices is introduced, and the potential applications of 2D ferroelectric devices are discussed. The availability of the CVD‐grown 2D ferroelectrics provides an abundant playground for not only deep studying the ferroelectric properties, but also conceiving various device applications. Lastly, the perspectives are provided to address the current challenges in terms of materials design, physics mechanism, device, and multifunctional application. [ABSTRACT FROM AUTHOR]

Monoclinic ferroelectric phases are prevalent in various functional materials, most notably mixed‐ion perovskite oxides. These phases can manifest as regularly ordered long‐range crystallographic structures or as macroscopic averages of the self‐assembled tetragonal/rhombohedral nanodomains. The structural and physical properties of monoclinic ferroelectric phases play a pivotal role when exploring the interplay between ferroelectricity, ferroelasticity, giant piezoelectricity and multiferroicity in crystals, ceramics and epitaxial thin films. However, the complex nature of this subject presents challenges, particularly in deciphering the microstructures of monoclinic domains. In Paper I [Biran & Gorfman (2024). Acta Cryst. A80, 112–128] the geometrical principles governing the connection of domain microstructures formed by pairing MAB type monoclinic domains were elucidated. Specifically, a catalog was established of 'permissible domain walls', where 'permissible', as originally introduced by Fousek & Janovec [J. Appl. Phys. (1969), 40, 135–142], denotes a mismatch‐free connection between two monoclinic domains along the corresponding domain wall. The present article continues the prior work by elaborating on the formalisms of permissible domain walls to describe domain microstructures formed by pairing the MC type monoclinic domains. Similarly to Paper I, 84 permissible domain walls are presented for MC type domains. Each permissible domain wall is characterized by Miller indices, the transformation matrix between the crystallographic basis vectors of the domains and, crucially, the expected separation of Bragg peaks diffracted from the matched pair of domains. All these parameters are provided in an analytical form for easy and intuitive interpretation of the results. Additionally, 2D illustrations are provided for selected instances of permissible domain walls. The findings can prove valuable for various domain‐related calculations, investigations involving X‐ray diffraction for domain analysis and the description of domain‐related physical properties. [ABSTRACT FROM AUTHOR]

Within the burgeoning field of electronic materials, B−N Lewis acid‐base pairs, distinguished by their partial charge distribution across boron and nitrogen centers, represent an underexplored class with significant potential. These materials exhibit inherent dipoles and are excellent candidates for ferroelectricity. However, the challenge lies in achieving the optimal combination of hard‐soft acid‐base pairs to yield B−N adducts with stable dipoles. Herein, we present an enantiomeric pair of B−N adducts [R/SC6H5CH(CH3)NH2BF3] (R/SMBA‐BF3) crystallizing in the polar monoclinic P21 space group. The ferroelectric measurements on RMBA‐BF3 gave a rectangular P‐E hysteresis loop with a remnant polarization of 7.65 μC cm−2, a value that aligns with the polarization derived from the extensive density‐functional theory computations. The PFM studies on the drop‐casted film of RMBA‐BF3 further corroborate the existence of ferroelectric domains, displaying characteristic amplitude‐bias butterfly and phase‐bias hysteresis loops. The piezoelectric nature of the RMBA‐BF3 was confirmed by its direct piezoelectric coefficient (d33) value of 3.5 pC N−1 for its pellet. The piezoelectric energy harvesting applications on the sandwich devices fabricated from the as‐made crystals of RMBA‐BF3 gave an open circuit voltage (VPP) of 6.2 V. This work thus underscores the untapped potential of B−N adducts in the field of piezoelectric energy harvesting. [ABSTRACT FROM AUTHOR]

Switchable tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe—down domains have lower friction coefficients and show slower wear rates than up domains and can be used as smart masks. This asymmetry is enabled by flexoelectrically coupled polarization in the up and down domains under a sufficiently high contact force. Moreover, we determine that this polarization-sensitive tribological asymmetry is widely applicable across various ferroelectrics with different chemical compositions and crystalline symmetry. Finally, using this switchable tribology and multi-pass patterning with a domain-based dynamic smart mask, we demonstrate three-dimensional nanostructuring exploiting the asymmetric wear rates of up and down domains, which can, furthermore, be scaled up to technologically relevant (mm–cm) size. These findings demonstrate that ferroelectrics are electrically tunable tribological materials at the nanoscale for versatile applications. The interaction of flexoelectric polarization arising from strain gradients with ferroelectricity impacts tribological properties and facilitates fine physical lithography without masks or chemicals, with potential applications in various fields. [ABSTRACT FROM AUTHOR]

Luminescent ferroelectrics are holding exciting prospect for integrated photoelectronic devices due to potential light‐polarization interactions at electron scale. Integrating ferroelectricity and long‐lived afterglow emission in a single material would offer new possibilities for fundamental research and applications, however, related reports have been a blank to date. For the first time, we here achieved the combination of notable ferroelectricity and afterglow emission in an organic‐inorganic hybrid material. Remarkably, the presented (4‐methylpiperidium)CdCl3 also shows noticeable antiferroelectric behavior. The implementation of cationic customization and halogen engineering not only enables a dramatic enhancement of Curie temperature of 114.4 K but also brings a record longest emission lifetime up to 117.11 ms under ambient conditions, realizing a leapfrog improvement of at least two orders of magnitude compared to reported hybrid ferroelectrics so far. This finding would herald the emergence of novel application potential, such as multi‐level density data storage or multifunctional sensors, towards the future integrated optoelectronic devices with multitasking capabilities. [ABSTRACT FROM AUTHOR]

The flexoelectric effects in ferroelectric materials have attracted abundant attention in recent years due to the potential application in microscale mechanical-electrical devices. However, quantifying flexoelectric coefficients in ferroelectrics is still a challenge because of the complex electromechanical coupling in ferroelectric materials. Inspired by the flexoelectric effect-induced skew of the hysteresis curve, an indirect method is proposed in this article to determine the flexoelectric coefficient with reasonably high accuracy. Phase-field simulations show that such skew is stimulated only by the flexoelectric effect, which excludes the influence of other electromechanical coupling effects. In addition, the magnitude of such skew is in linear proportion to the flexoelectric coefficient. The four-point bending PbTiO3 beam model is calculated as an example to obtain the transversal flexoelectric coefficient of f 1122. [ABSTRACT FROM AUTHOR]

The crystal structure and ferroelectric properties of epitaxial ZrO2 films ranging from 7 to 42 nm thickness grown on La0.67Sr0.33MnO3 buffered (110)‐oriented SrTiO3 substrate are reported. By employing X‐ray diffraction, a tetragonal phase (t‐phase) at all investigated thicknesses, with slight in‐plane strain due to the substrate in the thinnest films, is confirmed. Further confirmation of the t‐phase is obtained through infrared absorption spectroscopy with synchrotron light, performed on ZrO2 membrane transferred onto a high resistive silicon substrate. Up to a thickness of 31 nm, the ZrO2 epitaxial films exhibit ferroelectric behavior, at variance with the antiferroelectric behavior reported previously for the t‐phase in polycrystalline films. However, the ferroelectricity is found here to diminish with increasing film thickness, with a polarization of 13 µC cm−2 and down to 1 µC cm−2 for 7 and 31 nm thick ZrO2 films, respectively. Given that the t‐phase is nonpolar, the observations emphasize the influence of external factors, in promoting polarization in t‐ZrO2 thin films. These findings provide new insights into the ferroelectric properties and structure of ZrO2 thin films, and open up new directions to investigate the origin of ferroelectricity in ZrO2 and to optimize this material for future applications. [ABSTRACT FROM AUTHOR]

Thermally triggered spatial symmetry breaking in traditional ferroelectrics has been extensively studied for manipulation of the ferroelectricity. However, photoinduced molecular orbital breaking, which is promising for optical control of ferroelectric polarization, has been rarely explored. Herein, for the first time, we synthesized a homochiral fulgide organic ferroelectric crystal (E)‐(R)‐3‐methyl‐3‐cyclohexylidene‐4‐(diphenylmethylene)dihydro‐2,5‐furandione (1), which exhibits both ferroelectricity and photoisomerization. Significantly, 1 shows a photoinduced reversible change in its molecular orbitals from the 3 π molecular orbitals in the open‐ring isomer to 2 π and 1 σ molecular orbitals in the closed‐ring isomer, which enables reversible ferroelectric domain switching by optical manipulation. To our knowledge, this is the first report revealing the manipulation of ferroelectric polarization in homochiral ferroelectric crystal by photoinduced breaking of molecular orbitals. This finding sheds light on the exploration of molecular orbital breaking in ferroelectrics for optical manipulation of ferroelectricity. [ABSTRACT FROM AUTHOR]

We demonstrate ferroelectricity in Mg-substituted ZnO thin films with the wurtzite structure. Zn1−xMgxO films are grown by dual-cathode reactive magnetron sputtering on (111)-Pt // (0001)-Al2O3 substrates at temperatures ranging from 26 to 200 °C for compositions spanning from x = 0 to x = 0.37. X-ray diffraction indicates a decrease in the c-lattice parameter and an increase in the a-lattice parameter with increasing Mg content, resulting in a nearly constant c/a axial ratio of 1.595 over this composition range. Transmission electron microscopy studies show abrupt interfaces between Zn1−xMgxO films and the Pt electrode. When prepared at pO2 = 0.025, film surfaces are populated by abnormally oriented grains as measured by atomic force microscopy for Mg concentrations >29%. Raising pO2 to 0.25 eliminates the misoriented grains. Optical measurements show increasing bandgap values with increasing Mg content. When prepared on a 200 °C substrate, films display ferroelectric switching with remanent polarizations exceeding 100 μC cm−2 and coercive fields below 3 MV cm−1 when the Mg content is between ∼30% and ∼37%. Substrate temperature can be lowered to ambient conditions, and when doing so, capacitor stacks show only minor sacrifices to crystal orientation and nearly identical remanent polarization values; however, coercive fields drop below 2 MV/cm. Using ambient temperature deposition, we demonstrate ferroelectric capacitor stacks integrated directly with polymer substrate surfaces. [ABSTRACT FROM AUTHOR]

Hybrid organic–inorganic perovskite (HOIP) materials have attracted significant attention in photovoltaics, light emission, photodetection, etc. Based on the prototype metal halide perovskite crystal, there is a huge space for tuning the composition and crystal structure of this material, which would provide great potential to render multiple physical properties beyond the ongoing emphasis on the optoelectronic property. Recently, the two-dimensional (2D) HOIPs have emerged as a potential candidate for a new class of ferroelectrics with high Curie temperature and spontaneous polarization. Room-temperature solution-processability further makes HOIP a promising alternative to traditional oxide ferroelectrics such as BaTiO3 and PbTiO3. In this perspective, we focus on the molecular aspects of 2D HOIPs, their correlation with macroscopic properties, as well as the material design rules assisted by advanced simulation tools (e.g., machine learning and atomistic modeling techniques). The perspective provides a comprehensive discussion on the structural origin of ferroelectricity, current progress in the design of new materials, and potential opportunities and challenges with emerging materials. We expect that this perspective will provide inspiration for innovation in 2D HOIP ferroelectrics. [ABSTRACT FROM AUTHOR]

Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden-Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors. [ABSTRACT FROM AUTHOR]

Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible materials for next‐generation, non‐volatile memory devices. Nevertheless, performance reliability remains an issue. With TiN electrodes (the most reported electrode material), Hf‐Zr‐based ferroelectric capacitors struggle to provide reliable retention due to electrode‐ferroelectric interface interactions. Although Hf‐Zr‐based ferroelectric capacitors are fabricated with other electrodes, the focus is predominantly directed toward obtaining a large ferroelectric response. The impact of the electrodes on data retention for these ferroelectrics remains underreported and greater insight is needed to improve device reliability. Here, a comprehensive set of electrodes are evaluated with emphasis on the core ferroelectric memory reliability metrics of endurance, retention, and imprint. Metal‐ferroelectric‐metal capacitors comprised of a Hf0.5Zr0.5O2 layer deposited between different combinations of nitride (TiN, TiAlN, and NbN), pure metal (W), and oxide (MoO2, RuO2, and IrO2) top and bottom electrodes are fabricated for the investigation. From the electrical, physical, and structural analysis, the low reactivity of the electrode with the ferroelectric is found to be key for improved reliability of the ferroelectric capacitor. This understanding of interface properties provides necessary insight for the broad implementation of Hf‐Zr‐based ferroelectrics in memory technology and, overall, boosts the development of next‐generation memories. [ABSTRACT FROM AUTHOR]

With the advent of the post Moore era, modern electronics require further device miniaturization of all electronic components, particularly ferroelectric memories, due to the need for massive data storage. This demand stimulates the exploration of robust switchable ferroelectric polarizations at the atomic scale. In this scenario, van der Waals ferroelectrics have recently gained increasing attention because of their stable layered structure at nanometer thickness, offering the opportunity to realize two‐dimensional ferroelectricity that is long‐sought in conventional thin film ferroelectrics. In this review, recent advancements are summarized in layered ferroelectrics with highlights of the fundamentals of intrinsic two‐dimensional ferroelectricity, the emergence of artificial stacking ferroelectricity, and related protype devices with exotic functions. In addition, the unique polarization control in van der Waals ferroelectrics is discussed. Although great challenges remain unsolved, these studies undoubtedly advance the integration of 2D ferroelectrics in electronics. [ABSTRACT FROM AUTHOR]

The work provides a joint theoretical and experimental approach to explore the structural contributions to ferroelectricity for an amino acid-based ferroelectric of glycine silver nitrate (GSN). The experiments included Fourier-transform infrared spectroscopy (FTIR) and dielectric spectroscopy. The theoretical analysis was conducted by using hyperbolic law (HL). Unlike the published works, the obtained results indicated that the origin of structural changes when reducing temperature in GSN is related to the N-H deformation of glycine due to the enhanced role of defects. [ABSTRACT FROM AUTHOR]

In this review we concentrate on the work of K. Alex Müller in connection with his activities on oxide perovskites and ferroelectrics which were central to his research career long before he successfully discovered the first high temperature superconductor (HTSC) together with J. G. Bednorz in 1986. Not accidentally, but taking his long experience in perovskite ferroelectrics into account, the first HTSC was an oxide perovskite which had never been considered before to be superconducting. [ABSTRACT FROM AUTHOR]

Bismuth layer structured ferroelectrics (BLSFs) have drawn much attention due to their great potential for high‐temperature applications. It is generally accepted that BLSFs with small orthorhombic distortion should have low TC. In this paper, we report an anomalous example Li0.5Bi2.5Nb2O9 (LBN), which has small orthorhombic distortion but very high TC. LBN shows the highest TC (834°C) among currently reported prototype alkali‐metal BLSFs, which is attributed to its small tolerance factor. However, the refinement result reveals that LBN is orthorhombic with the space group of A21am, and the orthorhombic distortion of LBN a/b is merely 1.0019. The measurement of piezoelectric coefficient (d33 ∼ 6 pC/N) and observation of striped domain structure confirm the ferroelectricity nature of LBN. This work deepens our understanding of BLSFs and may lead to the finding of more novel BLSFs with high performance. [ABSTRACT FROM AUTHOR]