Search

Since the experimental observation of a rhombohedral phase of hafnium oxide, there remains controversy over whether this phase belongs to the R3 or R3m space group. Moreover, the origin of polarization in these two rhombohedral phases has not been comparatively elucidated. Here, we present a theoretical study comparing the relative stability and ferroelectricity of the R3 and R3m phases of HfO2, representing two potential forms of heavily Zr-doped ferroelectric thin films of hafnia found recently. We comprehensively investigate their structural stability and polarization response under in-plane compressive strain. A phase transition from R3 to R3m is discovered under biaxial compressive strain. The direction and magnitude of polarization in both phases can be tuned by strain. Through symmetry mode analysis, we elucidate the improper nature of ferroelectricity. These findings may advance understanding of ferroelectricity in hafnia thin films. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) multiferroic materials with coexisting ferroelasticity (FA) and ferroelectricity (FE) have potential applications in high-density data storage and sonar detectors. Here, based on first-principles calculations, we predict a series of stable 2D FA-FE multiferroic structures, namely, γ-XOOH (X = Al, Ga, and In) monolayers. By analyzing the lattice symmetry and orientation distribution of hydroxyls, we find that XOOH monolayers possess both in-plane ferroelastic and ferroelectric polarization, as well as antiferroelectric ordering caused by the anti-parallel alignment of hydroxyls. Interestingly, the perpendicular reorientation of in-plane FE polarization accompanies 90° ferroelastic switching. Moreover, they show an unusual negative transverse piezoelectric effect originated from the clamped-ion term. The multiferroic properties of the XOOH monolayers provide an excellent platform to study electroelastic effects. [ABSTRACT FROM AUTHOR]

Since the experimental observation of a rhombohedral phase of hafnium oxide, there remains controversy over whether this phase belongs to the R3 or R3m space group. Moreover, the origin of polarization in these two rhombohedral phases has not been comparatively elucidated. Here, we present a theoretical study comparing the relative stability and ferroelectricity of the R3 and R3m phases of HfO2, representing two potential forms of heavily Zr-doped ferroelectric thin films of hafnia found recently. We comprehensively investigate their structural stability and polarization response under in-plane compressive strain. A phase transition from R3 to R3m is discovered under biaxial compressive strain. The direction and magnitude of polarization in both phases can be tuned by strain. Through symmetry mode analysis, we elucidate the improper nature of ferroelectricity. These findings may advance understanding of ferroelectricity in hafnia thin films. [ABSTRACT FROM AUTHOR]