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The Bi 3.25 La 0.75 Ti 3 O 12 thin films with a buffer layer of Bi 4 Ti 3 O 12 thin film are deposited on p-Si(100) substrates by Sol-Gel method. The P-E hysteresis loops and current-voltage curve of the Bi 3.25 La 0.75 Ti 3 O 12 /Bi 4 Ti 3 O 12 film system are measured respectively. The results are performed and discussed. [ABSTRACT FROM AUTHOR]

Bi 3.25 La 0.75 Ti 3 O 12 films are prepared on Pt/Ti/SiO 2 /Si substrate by Sol-Gel method. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550°C annealed. The ferroelectric properties and leakage current characteristics are studied. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700°C is about 5.8 × 10 -8 A/cm 2 at 250 kV/cm. There are unambiguously differentiated mechanisms responsible for electrical transport at different electric field regimes in the BLT films. [ABSTRACT FROM AUTHOR]