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The radiating treatment is an effective way of influence on a structure and electrical properties of condensed matter that essentially expands the possibilities of material research. Ferroelectric compounds are interesting objects for a study of irradiation effects both from physical point of view, and for practical applications in microwave electronics. Till to present, basically bulk ferroelectrics were studied under radiation [1], nevertheless highly oriented thin ferroelectric films are most informative and practically important object for the investigations. The purpose of this work is associated with investigation of high energy electron radiation influence on defect structure and electrical characteristics of Ba0.6Sr0.4TiO3 (BSTO) ferroelectric films. [ABSTRACT FROM AUTHOR]

MgO and MnO 2 were added to Ba x Sr 1 - x TiO 3 (BSTO, x ≈ 0.55) powder target used in cathode sputtering deposition process of ferroelectric films. The dependences of ℇ, tan δ on temperature and electrical field were investigated. The temperature T m of ℇ maximum for Mn-doped films was shifted to lower values, and BSTO:Mg films had higher T m in comparison with the films without doping. Best property combination (ℇ ≈ 1500; tan δ < 0.003 at f = 1 MHz, tunability K ≈ 1.5 at 7 V/μm) was obtained on BSTO films containing Mn (∼2.0 mol. %) or Mg (∼3 mol. %). [ABSTRACT FROM AUTHOR]

The effect of the ratios of the cationic components and internal strains on the critical temperature T[sub c] and the dielectric characteristics of BSTO ferroelectric films grown on α-Al[sub 2]O[sub 3] [1012] and LaAlO[sub 3] substrates were investigated. Ion backscattering diagnostics revealed a barium deficiency in the surface layer of the films and showed that the films differ in structural quality. [ABSTRACT FROM AUTHOR]