Search

The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2 thin film after the memory device is annealed at 600 °C in N2 ambient for 60 s without any chemical reaction between Co and ZrO2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of -1.5∼-2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1∼-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications . [ABSTRACT FROM AUTHOR]

The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO[sub3](SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer. [ABSTRACT FROM AUTHOR]