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In ferroelectric memory devices, information is stored within the polarization direction whose reversal usually occurs by the nucleation and propagation of domains. In ultrathin ferroelectrics, ultrafast dynamics may be achieved by nucleation-limited switching, avoiding the inherently speed-limited propagation of domain walls. Here, we investigate polarization reversal dynamics in ultrathin ferroelectric films by transient current measurements. Thanks to the tunnel electroresistance, the start of polarization reversal induces sharp variations of the transmitted current under voltage pulses. These single-shot measurements show extremely fast switching with durations down to 3 ns that is only limited by the current device geometry. While the OFF-to-ON switching shows finite nucleation times that scale with the pulse amplitude, the ON-to-OFF switching speed cannot be detected under such rectangular pulses. Resorting to triangular pulse excitations allows us to detect the dynamics of this switching direction. Both cases can be interpreted by nucleation switching models following Merz's law. [ABSTRACT FROM AUTHOR]

The control of magnetism by electric fields is an important goal for the future development of low-power spintronics. Various approaches have been proposed on the basis of either single-phase multiferroic materials or hybrid structures in which a ferromagnet is influenced by the electric field applied to an adjacent insulator (usually having a ferroelectric, piezoelectric, or multiferroic character). The electric field effect on magnetism can be driven by purely electronic or electrostatic effects or can occur through strain coupling. Here we review progress in the electrical control of magnetic properties (anisotropy, spin order, ordering temperature, domain structure) and its application to prototype spintronic devices (spin valves, magnetic tunnel junctions). We tentatively identify the main outstanding difficulties and give perspectives for spintronics and other fields. [ABSTRACT FROM AUTHOR]

Multiferroic materials possess two or more ferroic orders but have not been exploited in devices owing to the scarcity of room-temperature examples. Those that are ferromagnetic and ferroelectric have potential applications in multi-state data storage if the ferroic orders switch independently, or in electric-field controlled spintronics if the magnetoelectric coupling is strong. Future applications could also exploit toroidal moments and optical effects that arise from the simultaneous breaking of time-reversal and space-inversion symmetries. Here, we use soft X-ray resonant magnetic scattering and piezoresponse force microscopy to reveal that, at the interface with Fe or Co, ultrathin films of the archetypal ferroelectric BaTiO3 simultaneously possess a magnetization and a polarization that are both spontaneous and hysteretic at room temperature. Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics. [ABSTRACT FROM AUTHOR]

The epitaxial BiFeO3 films on different substrates were prepared by metal organic chemical vapor deposition (MOCVD). The ferroelectric properties of the films were controlled by Piezoresponse Force Microscopy (PFM). The isopiestic post-annealing of the film inside the ceramic container made of BiFeO3 and Bi2Fe4O9 phase mixture was proposed to control the film stoichiometry. [ABSTRACT FROM AUTHOR]

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e., fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching 1014 cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO3/Ca0.96Ce0.04MnO3 FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude (4×106 cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications. [ABSTRACT FROM AUTHOR]

BiFeO3 thin films deposited on (111)-SrTiO3 substrates present both structural (rhombohedral) and multiferroic properties similar to bulk. The structural relaxation occurring when thickness increases and the low critical thickness possibly indicate different defect types and distribution as compared to (001)-BiFeO3, which may influence multiferroic domain dynamics. The same G-type antiferromagnetic order as in bulk is observed by neutron diffraction, with a superimposed weak ferromagnetic moment (10 emu/cm3) showing a planar anisotropy of 5 kJ/m3. When doped with 5% Mn these films also exhibit a polarization of 95 μC/cm2 along the [111] direction at room temperature, similar to high-quality BiFeO3 single crystals. [ABSTRACT FROM AUTHOR]

Multiferroic materials possess two or more ferroic orders but have not been exploited in devices owing to the scarcity of room-temperature examples. Those that are ferromagnetic and ferroelectric have potential applications in multi-state data storage if the ferroic orders switch independently, or in electric-field controlled spintronics if the magnetoelectric coupling is strong. Future applications could also exploit toroidal moments and optical effects that arise from the simultaneous breaking of time-reversal and space-inversion symmetries. Here, we use soft X-ray resonant magnetic scattering and piezoresponse force microscopy to reveal that, at the interface with Fe or Co, ultrathin films of the archetypal ferroelectric BaTiO3 simultaneously possess a magnetization and a polarization that are both spontaneous and hysteretic at room temperature. Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics. [ABSTRACT FROM AUTHOR]