1. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate.
- Author
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Someya, T., Fukidome, H., Ishida, Y., Yoshida, R., Iimori, T., Yukawa, R., Akikubo, K., Yamamoto, Sh., Yamamoto, S., Yamamoto, T., Kanai, T., Funakubo, K., Suemitsu, M., Itatani, J., Komori, F., Shin, S., and Matsuda, I.
- Subjects
ELECTRIC properties of graphene ,N-type semiconductors ,FEMTOSECOND lasers ,FERMI-Dirac distribution ,ENERGY dissipation ,SILICON carbide - Abstract
Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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