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Silicon radiation detectors, a special type of microelectronic sensor which plays a crucial role in many applications, are reviewed in this paper, focusing on fabrication aspects. After addressing the basic concepts and the main requirements, the evolution of detector technologies is discussed, which has been mainly driven by the ever-increasing demands for frontier scientific experiments. [ABSTRACT FROM AUTHOR]

We report on the main design and technological characteristics related to the latest 3D sensor process developments at Fondazione Bruno Kessler (FBK, Trento, Italy). With respect to the previous version of this technology, which involved columnar electrodes of both doping types etched from both wafer sides and stopping at a short distance from the opposite surface, passing-through columns are now available. This feature ensures better performance, but also a higher reproducibility, which is of concern in medium volume productions. In particular, this R&D project was aimed at establishing a suitable technology for the production of 3D pixel sensors to be installed into the ATLAS Insertable B-Layer. An additional benefit is the feasibility of slim edges, which consist of a multiple ohmic column termination with an overall size as low as 100 µm. Eight batches with two different wafer layouts have been fabricated using this approach, and including several design options, among them the ATLAS 3D sensor prototypes compatible with the new read-out chip FE-I4. [ABSTRACT FROM PUBLISHER]

Abstract: We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed. [Copyright &y& Elsevier]

Abstract: We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed. [Copyright &y& Elsevier]

Abstract: We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed. [Copyright &y& Elsevier]

Abstract: We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are discussed here. [Copyright &y& Elsevier]

Abstract: We present a new 3D detector architecture aimed at simplifying the manufacturing process making it more suitable for high volume production. In particular, the proposed device features electrodes of one doping type only, e.g., columns in a p-type substrate. We report on TCAD simulation results providing deep insight into the static and dynamic behavior of this detector, highlighting its advantages and potential drawbacks. The fabrication process we intend to use is also described along with results from the morphological characterization of the most critical technological steps. [Copyright &y& Elsevier]

Abstract The INFN CSN5 "TIMESPOT" project aims at the development and implementation of a complete integrated tracking system featuring very high precision both in space and in time for every pixel. Within this framework we are developing 3D pixel sensors optimized for timing, while retaining their usual advantages of low depletion voltage, extreme radiation hardness, and active edges. The pixel geometries are being optimized in terms of size, electrode configuration and shape. In particular, trenched electrodes are used instead of columns, so as to achieve more uniform electric and weighting field profiles. No established technology exists for 3D sensors with trenched electrodes, so we have developed and tested the necessary process steps. In this paper we report the main design and fabrication issues and selected results from TCAD simulations. Highlights • We report on 3D pixel sensors with trenched electrodes optimized for timing. • We thoroughly discussed the design and technological aspects. • We studied with TCAD the trade-off between intrinsic speed and pixel capacitance. • We demonstrated the technological feasibility of the proposed geometries. [ABSTRACT FROM AUTHOR]

Abstract: Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process, making it more suitable for high-volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n+ columns in a p-type substrate. In this paper we report on the fabrication at ITC-irst of the first batch of prototypes. The main issues related to the fabrication process along with preliminary results from the electrical characterization of different detectors and test structures are discussed. [Copyright &y& Elsevier]

Abstract: The 3D silicon radiation detectors are very promising devices to be used in environments requiring extreme radiation hardness, such as the super-LHC experiment at CERN. A drawback of this detector is the very long and non-standard fabrication process, which makes the mass production of these devices very critical. A possible simplification of the manufacturing process relies on a new type of 3D architecture, called 3D-single-type-column detector, that we have introduced in previous works. In this paper we report on the fabrication process of the first batch of detectors and on selected results from the electrical characterization of 3D test structures, covering leakage current, capacitance and breakdown voltage measurements. [Copyright &y& Elsevier]

Abstract: 3D silicon radiation detectors offer many advantages over planar detectors, including improved radiation tolerance and faster charge collection time. We proposed a new 3D architecture (referred to as 3D-stc), which features columnar electrodes of one doping type only, thus, allowing a considerable simplification of the manufacturing process. In this paper, we report selected results from the electrical characterization of 3D diodes fabricated with this technology, along with preliminary results on the charge collection efficiency of these devices. [Copyright &y& Elsevier]

Abstract: We report on the results from the production of 600 double-sided silicon microstrip detectors for the ALICE experiment. We present the fabrication process and some selected results from the electrical characterization of detectors and test structures. The large amount of experimental data allowed a statistically relevant analysis to be performed. The main technological aspects related to production yield optimization will also be addressed. [Copyright &y& Elsevier]