1. X-ray yields from high-energy heavy ions channeled through a crystal: their crystal thickness and projectile dependences
- Author
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Toshiyuki Azuma, T. Muranaka, K. Komaki, Takeshi Murakami, Yuichi Takabayashi, Eiichi Takada, C. Kondo, S. Masugi, Atsushi Hatakeyama, and Yasunori Yamazaki
- Subjects
Nuclear and High Energy Physics ,education.field_of_study ,Materials science ,Projectile ,Population ,X-ray ,Electron ,Ion ,Crystal ,Ionization ,Atomic physics ,education ,Instrumentation ,Excitation - Abstract
X-rays emitted from Ar 17+ , Fe 24+ and Kr 35+ ions of about 400 MeV/u transmitting through a thin Si crystal of about 20 μm thickness have been measured in a planar channeling condition and compared with those in a random incident condition. We have found that the X-ray yield from Ar 17+ ions is larger for the channeling condition than for the random incidence, while those from Fe 24+ and Kr 35+ ions are rather smaller. Such tendencies are explained by considering the projectile dependences of excitation and ionization probabilities together with X-ray emission rates. A crude simulation has qualitatively reproduced these experimental results. When the crystal thickness is small, the X-ray yield is smaller in the channeling condition than in the random incident condition, because excitation is depressed. However, for thicker crystals, the X-ray yield is larger, since the survived population of projectile-bound electrons is larger due to small ionization probabilities under the channeling condition. This inversion occurs at a specific crystal thickness depending on projectile species. Whether the thickness of the used crystal is smaller or larger than the inversion thickness determines enhancement or depression of the X-ray yield in the channeling condition.
- Published
- 2005