1. Edgeless and purely gate-defined nanostructures in InAs quantum wells.
- Author
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Mittag, Christopher, Karalic, Matija, Lei, Zijin, Tschirky, Thomas, Wegscheider, Werner, Ihn, Thomas, and Ensslin, Klaus
- Subjects
NANOSTRUCTURED materials ,QUANTUM wells ,MICROFABRICATION ,ETCHING ,QUANTUM dots - Abstract
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here, we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quantum dots are demonstrated. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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