1. Optically active Er3+ ions in SiO2 codoped with Si nanoclusters.
- Author
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Navarro-Urrios, D., Lebour, Y., Jambois, O., Garrido, B., Pitanti, A., Daldosso, N., Pavesi, L., Cardin, J., Hijazi, K., Khomenkova, L., Gourbilleau, F., and Rizk, R.
- Subjects
PHYSICS research ,NANOPARTICLES ,NANOSTRUCTURED materials ,ERBIUM ,IONS ,SEMICONDUCTOR doping ,DOPED semiconductor superlattices ,ION mobility spectroscopy - Abstract
Optical properties of directly excited erbium (Er
3+ ) ions have been studied in silicon rich silicon oxide materials codoped with Er3+ . The spectral dependence of the direct excitation cross section (σdir ) of the Er3+ atomic4 I15/2 →4 I11/2 transition (around 0.98 μm) has been measured by time resolved μ-photoluminescence measurements. We have determined that σdir is 9.0±1.5×10-21 cm2 at 983 nm, at least twice larger than the value determined on a stoichiometric SiO2 matrix. This result, in combination with a measurement of the population of excited Er3+ as a function of the pumping flux, has allowed quantifying accurately the amount of optically active Er3+ . This concentration is, in the best of the cases, 26% of the total Er population measured by secondary ion mass spectrometry, which means that only this percentage could provide optical gain in an eventual optical amplifier based on this material. [ABSTRACT FROM AUTHOR]- Published
- 2009
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