1. Epitaxial Fe on free-standing GaAs nanowires.
- Author
-
Mingze Yang, Ali Darbandi, Sarmita Majumder, Simon Watkins, and Karen Kavanagh
- Subjects
EPITAXY ,NANOWIRES ,ELECTROPLATING ,DOPING agents (Chemistry) ,FABRICATION (Manufacturing) ,SCANNING electron microscopes - Abstract
Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF