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Surface Plasmon Polaritons (SPPs) in Au thin films are nowadays intensively exploited for sensing applications that leverage the strong optical field confinement at the metal/dielectric interface and the easy functionalization of the Au surface. Moreover, Au thin films represent one of the common starting points for the top-down nanofabrication of plasmonic nanostructures supporting localized resonances. In this framework, strategies for the growth of high-quality Au films on transparent substrates are crucial and not yet fully established. In this study, we exploit MgO(001) substrates for the growth of thin (about 45 nm) Au films, also including an additional buffer layer of Fe. We successfully demonstrate Au samples with reduced roughness and presenting Low-Energy Electron Diffraction (LEED) features, indicating a high degree of crystalline ordering. This is supported by the experimental evidence of an increased (by almost a factor of 3) propagation length compared to a reference Au sample grown on standard glass slides, which is however still significantly lower than the one expected from first principles. [ABSTRACT FROM AUTHOR]

Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. We report on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature (T < 275 °C), low-cost, and scalable techniques. Epitaxial c-Si layers are grown by PECVD at 160 °C and transferred on a glass substrate by anodic bonding and mechanical cleavage. A silver back mirror is combined with a front texturation based on an inverted nanopyramid array fabricated by nanoimprint lithography and wet etching. We demonstrate a short-circuit current density of 25.3 mA/cm² for an equivalent thickness of only 2.75 μm. External quantum efficiency (EQE) measurements are in very good agreement with FDTD simulations. We infer an optical path enhancement of 10 in the long wavelength range. A simple propagation model reveals that the low photon escape probability of 25% is the key factor in the light trapping mechanism. The main limitations of our current technology and the potential efficiencies achievable with contact optimization are discussed. [ABSTRACT FROM AUTHOR]

Fabrication of high-quality ultrathin monocrystalline silicon layers and their transfer to low-cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low-temperature and low-cost process for ultrathin silicon solar cells. By using standard plasma-enhanced chemical vapor deposition (PECVD), we grow high-quality epitaxial silicon layers (epi-PECVD) from SiH4/H2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi-PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13-14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H-rich interface fragility, we demonstrate the transfer of large areas (∽10 cm2) ultrathin epi-PECVD layers (0.5-5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275-350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]