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In this paper, the impact of temperature on the electromagnetic susceptibility of operational ampli¯ers at di®erent frequencies is presented. The IEC 62132-4 direct power injection standard has been used with several commercials operational ampli¯ers in a printed circuit board speci¯cally fabricated. The results show that the susceptibility of the operationals ampli¯er is reduced with the temperature.

A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance applied to the gate. The model consists of a unique simple equivalent circuit based on a voltage dependent current source and a reduced number of parameters which can accurately predict the drift on the drain current due to the EMI source. The analytical approach has been validated by means of electric simulation and mesaurement and can be easily introduced in circuit simulators. The proposed modeling technique combined with the nth-power law model of the MOSFET without EMI, significantyly improves its accuracy in comparison with the n-th power law directy applied to a MOSFET under EMI impact.

In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout.

The continuous scaling of CMOS circuits has set the MOSFET transistor in the nanoelectronic era. In this context, the functionality and complexity of integrated circuits (ICs) are growing up. However, the operation voltage has been continuously reduced. The higher complexity of ICs has allowed including electronic systems in a lot of safety critical applications (i.e., automotive, aeronautics and/or medical applications). Therefore, the functionality of these electronic equipments must be assured and the risk of electromagnetic interference (EMI) must be reduced during their lifetime. Nowadays, circuits’ robustness to electromagnetic interference is checked in a burn-in component, without taking into account the impact of the natural devices’ aging. However, shrunk dimensions imply the appearance of several wear out mechanisms, which can limit the functionality of the circuits and modify their electromagnetic performance. Therefore, the time dependence of electromagnetic behaviour, which is known as Electromagnetic Robustness or Electromagnetic Reliability (EMR), should be evaluated. The switching noise is probably one of the main EMC emission problems in CMOS circuits. It is know that wear out mechanism affects the switching behaviour of CMOS circuits. Therefore, some effects on EMC performance of these circuits should be expected. In this work, the switching noise behaviour or CMOS circuits under one of the most important reliability problems are analysed by means of electrical simulation. In order to do that, a characterization of wear out mechanism on single MOSFET is presented and modelled. The results show a reduction on the frequency switching noise emission in circuits subjected to wear out, due to the reduction of the drain current of MOSFET.

The effects of negative bias temperature instability (NBTI) on the sub-threshold performance of a pFET have been investigated by means of experimental methods. Specifically, the sub-threshold slope under static and dynamic NBTI stress has been characterized for different NBTI stress conditions. In order to perform the characterization, a proposal based on an alternative measurement technique to obtain the sub-threshold slope is presented. Our first results indicate that similar sub-threshold slope is obtained in all stress conditions.

This paper contributes to the conducted EMI reduction generated by switched power converters operating in multiconverter arrangement. The EMI reduction is achieved by means of the combination of two techniques: interleaving and switching frequency modulation. The effectiveness of such methods in terms of EMI reduction is experimentally validated in a four channel parallel buck converter. The technique that provides the best attenuation results is identified. Finally, special attention has been paid to possible undesired side-effects produced by these techniques. For this reason the converter efficiency and output voltage ripple are evaluated.

Filters based on complementary split-ring resonators present a large notch attenuation at the resonant frequency. An application of these very low cost filters to an audio system interfered by a mobile phone is presented in this paper.

In this paper an alternative method for characterizing and modelling the EMI susceptibility in integrated circuits at frequencies above 1 GHz is presented. The PCB layout design is focused on the optimization of the impedance mismatch losses on the radio frequency interference injection path. The PCB has been tested with several commercial operational amplifiers and the methodology is validated through both electrical transmission line simulations and electromagnetic cosimulations.

This paper addresses the design of high-Q passive inductors and differential transformers in a low-power lownoise amplifier (LNA) application. The passives quality in resonant LC tanks as well as in the matching network and degeneration inductors has been improved by balancing the trade-off between ohmic losses and Eddy current degradation. As a result, the enhanced passives Q-factor for the optimized passive devices has been used in order to design a 2.4 GHz fully integrated high-gain current-reused LNA, implemented in 0.18 μm CMOS technology. The LNA performance show a gain of roughly 30 dB, while dissipating 0.9 mA from a 1.2 V supply.

Two different techniques based on metamaterials for mitigating both the differential and common-mode propagation in differential signaling are addressed. The proposed filters are implemented by means of complementary split ring and spiral resonators applied to coupled parallel microstrip lines. Frequency response, signal integrity and radiation emission are analyzed.