1. Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing
- Author
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Young-Hwan Choi and Han-Youl Ryu
- Subjects
Amorphous silicon ,Materials science ,Annealing (metallurgy) ,General Physics and Astronomy ,02 engineering and technology ,engineering.material ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,symbols.namesake ,law ,0103 physical sciences ,Laser power scaling ,Thin film ,010302 applied physics ,Blue laser ,business.industry ,021001 nanoscience & nanotechnology ,Laser ,Polycrystalline silicon ,chemistry ,engineering ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Raman spectroscopy - Abstract
We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.
- Published
- 2018
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