1. Effect of Nb2O5 on the ∼2.0 μm band luminescence of Ho3+/Tm3+/Ce3+ tri-doped tellurite glass.
- Author
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Zhu, Liqiao, Zhao, Dongyi, Li, Chengyan, Ding, Jiale, Li, Jun, and Zhou, Yaxun
- Subjects
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TELLURITES , *LUMINESCENCE , *ACTIVE medium , *GLASS , *ENERGY transfer , *SEMICONDUCTOR lasers , *OPTOELECTRONIC devices - Abstract
In this work, the effect of Nb 2 O 5 oxide on the ∼2.0 μm band luminescence of Ho3+/Tm3+/Ce3+ tri-doped tellurite glass with composition of TeO 2 –ZnO–La 2 O 3 was studied. The doped tellurite glass was synthesized by using the melt-quenching method. Under the pumping of 808 nm laser diode (LD), a broad and relatively flat fluorescence emission ranging from 1600 to 2200 nm with a full width at half maximum (FWHM) of 374 nm was obtained by optimizing the concentration combination of Ho3+, Tm3+ and Ce3+ ions. The observed broad luminescence was attributed to the spectral overlapping between the energy level transitions from 3F 4 to 3H 6 of Tm3+ at 1.82 μm and that from 5I 7 to 5I 8 of Ho3+ at 2.0 μm. Further, an increment by about 143% in peak intensity of 1600∼2200 nm broad luminescence was found after the introduction of Nb 2 O 5 oxide, which is due to the enhanced energy transfer from Tm3+ to Ho3+ ions, and the increased multi-phonon relaxation (MPR) rate from higher levels to fluorescence emitting levels. It can be inferred from the results that a potential gain medium suitable for applications in optoelectronic devices operating at ∼2.0 μm band can be produced by incorporating an appropriate amount of Nb 2 O 5 oxide into Ho3+/Tm3+/Ce3+ tri-doped tellurite glass. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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