1. High Energy Performance Ferroelectric (Ba,Sr)(Zr,Ti)O3 Film Capacitors Integrated on Si at 400 °C
- Author
-
Xiangli Zhong, Yu-Yao Zhao, Hongbo Cheng, Jun Ouyang, Yuan Zhang, Sixu Wang, Kun Wang, and Qian Li
- Subjects
010302 applied physics ,Materials science ,business.industry ,02 engineering and technology ,Dielectric ,Sputter deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Energy storage ,law.invention ,Capacitor ,Polarization density ,Film capacitor ,law ,Sputtering ,visual_art ,0103 physical sciences ,visual_art.visual_art_medium ,Optoelectronics ,General Materials Science ,Ceramic ,0210 nano-technology ,business - Abstract
BaTiO3-based ferroelectrics have been extensively studied due to their large dielectric constants and a high saturated polarization, which have the potential to store or supply electricity of very high energy and power densities. In order to further improve the energy efficiency η and the recyclable energy density Wrec, an A, B-site co-doped (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 ceramic target was used for sputter deposition of film capacitor structures on Si. This film composition reduces the remnant polarization Pr, while the choice of a low-temperature, templated sputtering process facilitates the formation of high-density arrays of columnar nanograins (average diameter d ∼20 nm) and grain boundary dead layers. This self-assembled nanostructure further delays the saturation of the electric polarization, leading to a high energy density Wrec of ∼148 J/cm3 and a high energy efficiency η of ∼90%. Moreover, the (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 film capacitors retain their high energy storage performance in a broad range of working temperature (-175-300 °C) and operating frequency (1 Hz-20 kHz). They are also fatigue-free after up to 2 × 109 switching cycles. Our work provides a new method and a cost-effective processing route for the creation and integration of high-performance dielectric capacitors for energy storage applications.
- Published
- 2021