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We demonstrate a 222 GBd on-off-keying transmitter in a short-reach intra-datacenter scenario with direct detection after 120 m of standard single mode fiber. The system operates at net-data rates of >200 Gb/s OOK for transmission distances of a few meters, and >177 Gb/s over 120 m, limited by chromatic dispersion in the standard single mode fiber. The high symbol rate transmitter is enabled by a high-bandwidth plasmonic-organic hybrid Mach–Zehnder modulator on the silicon photonic platform that is ribbon-bonded to an InP DHBT 2:1 digital multiplexing selector. Requiring no driving RF amplifiers, the selector directly drives the modulator with a differential output voltage of 622 mVpp measured across a 50 Ω resistor. The transmitter assembly occupies a footprint of less than 1.5 mm × 2.1 mm. [ABSTRACT FROM AUTHOR]

A most compact all-metallic high-speed in-phase and quadrature modulator with a 36 μm fiber-to-fiber pitch operating at 200 Gbit/s is introduced. All components of the modulator are made of metal: The vertical crating couplers, the waveguides, polarization rotators, splitters, and phase shifters. As the modulator relies on substrate-independent processes, it can basically be put down on any smooth layer. The modulator is interconnected to a multicore fiber for optical input and output coupling. We demonstrate 100 GBd signal modulation with a quadrature phase-shift keying modulation format and a bit-error ratio below the hard-decision forward error correction. The metallic modulator shows the potential of plasmonics in offering highest speed and advanced modulations on a smallest possible footprint. The simple fabrication makes it attractive for low-cost applications such as short-haul and data-center networks. [ABSTRACT FROM AUTHOR]

We demonstrate for the first time generation of 16-state quadrature amplitude modulation (16QAM) signals at a symbol rate of 40 GBd using silicon-based modulators. Our devices exploit silicon-organic hybrid integration, which combines silicon-on-insulator slot waveguides with electro-optic cladding materials to realize highly efficient phase shifters. The devices enable 16QAM signaling and quadrature phase shift keying at symbol rates of 40 GBd and 45 GBd, respectively, leading to line rates of up to 160 Gb/s on a single wavelength and in a single polarization. This is the highest value demonstrated by a silicon-based device up to now. The energy consumption for 16QAM signaling amounts to less than 120 fJ/bit—one order of magnitude below that of conventional silicon photonic 16QAM modulators. [ABSTRACT FROM PUBLISHER]

We report on the hybrid integration of silicon-on-insulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid Mach-Zehnder modulators that feature low UπL-products of down to 0.52 Vmm and support data rates of up to 40 Gbit/s. [ABSTRACT FROM PUBLISHER]