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IEEE Electron Device Letters is one of the most selective rapid publication venues within the field of electron devices. Our goal is to rapidly publish strictly novel research results that are also highly relevant. Accomplishing this goal would not be possible without the strong support of the technical professionals—authors and reviewers from academic, industrial, and government institutions worldwide—who directly contribute to the content and quality of this journal. [ABSTRACT FROM AUTHOR]

The single-event-transient response of InGaAs MOSFETs exposed to heavy-ion and laser irradiations is investigated. The large barrier between the gate oxide and semiconductor regions effectively suppresses the gate transients compared with other types of III-V FETs. After the initial radiation-induced pulse, electrons and holes flood into the channel region at short time. The electrons are collected efficiently at the drain. The slower moving holes accumulate in the channel and source access region and modulate the source-channel barrier, which provides a pathway for transient source-to-drain current lasting for a few nanoseconds. The peak drain transient current reaches its maximum when the gate bias is near threshold and decreases considerably toward inversion and slightly toward depletion and accumulation. Two-dimensional TCAD simulations are used to understand the charge collection mechanisms. [ABSTRACT FROM PUBLISHER]

Prof. Steven J. Koester, having served as an Editor for IEEE ELECTRON DEVICE LETTERS since 2012, has completed his tenure. On behalf of IEEE ELECTRON DEVICE LETTERS staff and readers, I would like to thank him for his excellent contribution and dedicated service to the journal over the past nine years. [ABSTRACT FROM AUTHOR]

PProf. Edmundo A. Gutiérrez D., having served as an Editor for IEEE Electron Device Letters since 2011, has completed his tenure. On behalf of IEEE Electron Device Letters staff and readers, I would like to thank him for his excellent contribution and dedicated service to the journal over the past nine years. [ABSTRACT FROM AUTHOR]

IEEE Electron Device Letters is one of the most selective rapid publication venues within the field of electron devices. Our goal is to rapidly publish strictly novel research results that are also highly relevant. Accomplishing this goal would not be possible without the strong support of the technical professionals—authors and reviewers from academic, industrial, and government institutions worldwide—who directly contribute to the content and quality of this journal. [ABSTRACT FROM AUTHOR]

It is my great pleasure to announce the winner of the 2019 Electron Devices Society George E. Smith Award given to a letter published in the IEEE Electron Device Letters (EDL) in 2019. The selection was made by vote of EDL’s Editors. The letter is titled “Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit” and it is authored * by Yuhao Zhang, Min Sun, Josh Perozek, Zhihong Liu, Ahmad Zubair, Daniel Piedra, Nadim Chowdhury, Xiang Gao, Kenneth Shepard, and Tomás Palacios. The letter was published in the January 2019 issue of EDL. [ABSTRACT FROM AUTHOR]

Prof. Kei May Lau, Dr. Jeong-sun Moon, and Prof. Dae-Hyun Kim have completed their terms as Editors. On behalf of IEEE Electron Device Letters authors, readers and staff, I would like to express my deepest gratitude for their contributions and service to the journal over the past years, and wish them continued success in their professional endeavors. [ABSTRACT FROM AUTHOR]